Microsemi APTC60DHM45T1G Asymmetrical bridge super junction mosfet power module Datasheet

APTC60DHM45T1G
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 49A @ Tc = 25°C
Asymmetrical bridge
Super Junction MOSFET
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
•
•
•
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTC60DHM45T1G – Rev 0
Symbol
VDSS
APTC60DHM45T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Min
Typ
7.2
8.5
nF
150
VGS = 10V
VBus = 300V
ID = 49A
nC
34
51
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5Ω
30
ns
100
45
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5Ω
675
µJ
520
1100
µJ
635
Diode ratings and characteristics
IRM
IF
VF
Min
Maximum Reverse Leakage Current
VR=600V
Reverse Recovery Time
Qrr
Reverse Recovery Charge
25
500
30
IF = 30A
1.8
IF = 60A
2.2
IF = 30A
VR = 400V
di/dt =200A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 30A
trr
Max
600
DC Forward Current
Diode Forward Voltage
Typ
Tj = 125°C
1.5
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
35
Tj = 125°C
480
µA
A
2.2
V
August, 2009
VRRM
Test Conditions
Maximum Peak Repetitive Reverse Voltage
ns
nC
2–7
APTC60DHM45T1G – Rev 0
Symbol Characteristic
APTC60DHM45T1G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
CoolMOS
Diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.5
1.2
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTC60DHM45T1G – Rev 0
August, 2009
SP1 Package outline (dimensions in mm)
APTC60DHM45T1G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
100
80
60
40
TJ=125°C
20
TJ=25°C
0
0
5
10
15
20
25
0
Normalized to
VGS=10V @ 50A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1.3
VGS=20V
1.05
1
0.95
ID, DC Drain Current (A)
0.9
40
30
20
10
0
0
20
40
60
80
100 120 140
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
August, 2009
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
4–7
APTC60DHM45T1G – Rev 0
ID, Drain Current (A)
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1000
1.0
ID, Drain Current (A)
0.9
0.8
0.7
limited by RDSon
100
100 µs
0.6
1 ms
Single pulse
TJ=150°C
TC=25°C
10
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
1000
Crss
10
0
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
100
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
10000
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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12
ID=50A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
20
40
60 80 100 120 140 160
Gate Charge (nC)
August, 2009
VGS(TH), Threshold Voltage
(Normalized)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
C, Capacitance (pF)
VGS=10V
ID= 50A
2.5
5–7
APTC60DHM45T1G – Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60DHM45T1G
APTC60DHM45T1G
Delay Times vs Current
140
Rise and Fall times vs Current
70
td(off)
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
60
tr and tf (ns)
td(on)
20
50
tf
40
30
tr
20
10
0
0
0
10
20 30 40 50
60 70 80
0
10
20
ID, Drain Current (A)
1.6
Switching Energy (mJ)
Eon
1.2
Eoff
0.8
0.4
VDS=400V
ID=50A
TJ=125°C
L=100µH
2
1.5
60
70
80
Eoff
Eon
1
0.5
0
0
0
10
20 30 40 50 60
ID, Drain Current (A)
70
80
0
ZVS
ZCS
200
VDS=400V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
100
hard
switching
50
IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current
250
0
5
10
20
30
40
50
Gate Resistance (Ohms)
300
Frequency (kHz)
50
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
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Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
August, 2009
Switching Energy (mJ)
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
40
Switching Energy vs Gate Resistance
2.5
Switching Energy vs Current
2
30
ID, Drain Current (A)
6–7
APTC60DHM45T1G – Rev 0
td(on) and td(off) (ns)
120
APTC60DHM45T1G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
100
TJ=125°C
60
40
20
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
125
60 A
100
30 A
75
15 A
50
3.0
0
200
TJ=125°C
VR=400V
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
1.5
600
800
1000 1200
IRRM vs. Current Rate of Charge
30
TJ=125°C
VR=400V
25
60 A
20
15
30 A
15 A
10
5
0
0
200
-diF/dt (A/µs)
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
200
175
Duty Cycle = 0.5
TJ=175°C
40
150
IF(AV) (A)
C, Capacitance (pF)
400
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
125
100
75
50
30
20
August, 2009
80
TJ=125°C
VR=400V
150
10
25
0
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (°C)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTC60DHM45T1G – Rev 0
IF, Forward Current (A)
Trr vs. Current Rate of Charge
175
120
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