FCI FCR08-6 0.8 amp silicon controlled recifier Datasheet

FCR0840~60
Mechanical Dimensions
Description
TO-92
1
2
1. CATHODE
2. GATE
3. ANODE
3
.Driven directly with IC and MOS device.
.Feature proprietary, void-free glass passivate
chips.
.Available in voltage ratings from 400 to 600
volts. (VDRM and VRRM)
.Sensitive gate trigger current.
.Designed for high volume, line-powered
control application in relay lamp drivers, small
motor controls, gate drivers for large thyristors.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
DEVICE
NUMBER
RATING
UNITS
* VDRM
* VRRM
FCR0840
FCR0860
400
600
VOLT
IT(RMS)
0.8
AMP
ITSM
8
AMP
Peak Gate-Trigger Current for 3µ sec , Max
IGTM
0.8
AMP
Peak Gate-Power Dissipation at IGT≦IGTM
PGM
0.1
WATT
PG(AV)
0.01
WATT
VRGM
10
V
PARAMETERS
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
RMS On-State Current at Ta=57℃ and Conduction
Angle of 180º
Peak Surge (Non-Repetitive)On-State Current,
½ Cycle ,at 50Hz or 60Hz
Average Gate-Power Dissipation
Peak gate reverse voltage
Peak Off-State Current, Ta=25℃ (1)
VDRM & VRRM=Max. Rating Ta=125℃
(2)
* IDRM
* IRRM
(1) 10
(2) 100
µA
MAX
Maximum On-State Voltage. (Peak)
At Tc=25℃ and IT =Rated Amps
VTM
1.7
DC Holding Current
* IH
5
* Critical
dv/dt
5
V/µ sec
DC Gate –Trigger Current for Anode Voltage=7VDC,
RL=100Ω
IGT
100
µA
MAX
DC Gate –Trigger Voltage for Anode Voltage=7VDC,
RL=100Ω
VGT
0.8
VOLT
MAX
Gate-Controlled Turn-on Time tD+tR IGT=10mA
Tgt
2.2
µ sec
RθJ-C
75
℃/WATT
TYP
Tstg
-40 to + 150
℃
Toper
-40 to + 110
℃
Critical Rate-Of-Rise of off-State Voltage
Gate Open,Ta=110℃
Thermal Resistance , Junction-to-Case
Storage Temperature range
Operating Temperature Range , Tj
* RGK=1KΩ
VOLT
MAX
mA
MAX
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