TI1 CSD23280F3 12v p-channel femtofet mosfet Datasheet

Sample &
Buy
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
CSD23280F3
SLPS601 – APRIL 2016
CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET
1 Features
•
•
•
•
1
•
•
•
•
Product Summary
Low On Resistance
Ultra-Low Qg and Qgd
High Operating Drain Current
Ultra-Small Footprint
– 0.73 mm × 0.64 mm
Ultra-Low Profile
– 0.35-mm Max Height
Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
Lead and Halogen Free
RoHS Compliant
TA = 25°C
•
•
UNIT
Drain-to-Source Voltage
–12
V
Qg
Gate Charge Total (4.5 V)
0.95
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
VGS(th)
Drain-to-Source
On-Resistance
0.068
nC
VGS = –1.5 V
230
mΩ
VGS = –1.8 V
180
mΩ
VGS = –2.5 V
129
mΩ
VGS = –4.5 V
97
mΩ
Threshold Voltage
–0.65
V
Ordering Information(1)
2 Applications
•
•
TYPICAL VALUE
VDS
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Applications
Battery Applications
Handheld and Mobile Applications
3 Description
This –12-V, 97-mΩ, P-Channel FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size.
.
.
DEVICE
QTY
CSD23280F3
3000
CSD23280F3T
250
MEDIA
PACKAGE
SHIP
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
–12
V
VGS
Gate-to-Source Voltage
–6
V
ID
Continuous Drain Current(1)
1.8
A
IDM
Pulsed Drain Current(1)(2)
11.4
A
PD
Power Dissipation(1)
500
mW
Human Body Model (HBM)
4000
V
Charged Device Model (CDM)
2000
V
–55 to 150
°C
V (ESD)
TJ,
Tstg
Operating Junction,
Storage Temperature
(1) Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%
.
Typical Part Dimensions
Top View
G
0.35 mm
D
0.64 mm
0.73 mm
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD23280F3
SLPS601 – APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
6.1
6.2
6.3
6.4
1
1
1
2
3
7
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
Device and Documentation Support.................... 7
4 Revision History
2
DATE
REVISION
NOTES
April 2016
*
Initial release.
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –9.6 V
–50
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –5 V
–25
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
RDS(on)
gfs
Drain-to-source on-resistance
Transconductance
–12
–0.40
V
–0.65
–0.95
VGS = –1.5 V, IDS = –0.1 A
230
399
mΩ
V
VGS = –1.8 V, IDS = –0.4 A
180
250
mΩ
VGS = –2.5 V, IDS = –0.4 A
129
165
mΩ
VGS = –4.5 V, IDS = –0.4 A
97
116
mΩ
VDS = –1.2 V, IDS = –0.4 A
3
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer Capacitance
RG
Series gate resistance
Qg
Gate charge total (4.5 V)
Qgd
Gate charge gate-to-drain
Qgs
Gate charge gate-to-source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turn on delay time
tr
Rise time
td(off)
Turn off delay time
tf
Fall time
180
234
pF
73
95
pF
8.5
11.1
pF
1.23
nC
VGS = 0 V, VDS = –6 V,
ƒ = 1 MHz
Ω
9
0.95
VDS = –6 V, IDS = –0.4 A
VDS = –6 V, VGS = 0 V
0.068
nC
0.30
nC
0.15
nC
1.07
nC
8
ns
VDS = –6 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0 Ω
4
ns
21
ns
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = –0.4 A, VGS = 0 V
–0.73
–1.0
V
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
TYPICAL VALUES
UNIT
Junction-to-ambient thermal resistance (1)
90
°C/W
Junction-to-ambient thermal resistance (2)
255
°C/W
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz. (0.071-mm) thick Cu.
Device mounted on FR4 material with minimum Cu mounting area.
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
3
CSD23280F3
SLPS601 – APRIL 2016
www.ti.com
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
5
VGS = -1.5 V
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
9
8
-IDS - Drain-To-Source Current (A)
-IDS - Drain-to-Source Current (A)
10
7
6
5
4
3
2
1
TC = 125° C
TC = 25° C
TC = -55° C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
-VDS - Drain-to-Source Voltage (V)
1.2
1.4
0
0.4
D002
0.8
1.2
1.6
2
-VGS - Gate-To-Source Voltage (V)
2.4
2.8
D003
VDS = –5 V
Figure 2. Saturation Characteristics
4
Submit Documentation Feedback
Figure 3. Transfer Characteristics
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
1000
4
C - Capacitance (pF)
-VGS - Gate-to-Source Voltage (V)
5
4.5
3.5
3
2.5
2
1.5
100
10
1
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0.5
1
0
0
0.2
0.4
0.6
0.8
Qg - Gate Charge (nC)
VDS = –6 V
1
0
1.2
2
D004
D005
Figure 5. Capacitance
350
RDS(on) - On-State Resistance (m:)
0.95
-VGS(th) - Threshold Voltage (V)
12
ID = –0.4 A
Figure 4. Gate Charge
0.85
0.75
0.65
0.55
0.45
0.35
0.25
-75
4
6
8
10
-VDS - Drain-to-Source Voltage (V)
TC = 25° C, I D = -0.4 A
TC = 125° C, I D = -0.4 A
300
250
200
150
100
50
0
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
0
175
1
D006
2
3
4
5
6
-VGS - Gate-To-Source Voltage (V)
7
8
D007
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
10
1.3
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
-ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
1.4
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25qC
TC = 125qC
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
VGS = –4.5 V
125
150
175
0
0.2
0.4
0.6
0.8
-VSD - Source-To-Drain Voltage (V)
D008
1
D009
ID = –0.4 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
5
CSD23280F3
SLPS601 – APRIL 2016
www.ti.com
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
3
-IDS - Drain-to-Source Current (A)
-IDS - Drain-To-Source Current (A)
100
10
1
0.1
100 ms
10 ms
0.01
0.1
1 ms
100 µs
1
10
-VDS - Drain-To-Source Voltage (V)
100
2.5
2
1.5
1
0.5
0
-50
-25
D010
0
25
50
75
100 125
TA - Ambient Temperature (qC)
150
175
D011
Single Pulse, Max RθJA = 255°C/W
Figure 10. Maximum Safe Operating Area
6
Figure 11. Maximum Drain Current vs Temperature
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
6 Device and Documentation Support
6.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.2 Trademarks
FemtoFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
7
CSD23280F3
SLPS601 – APRIL 2016
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Mechanical Dimensions
0.73
0.65
A
B
PIN 1 INDEX AREA
0.64
0.56
0.35 MAX
C
SEATING PLANE
0.4
0.225
2
3
0.175
0.51
0.49
0.35
1
0.015
0.16
2X
0.14
C B
A
2X
0.16
0.14
0.015
C A
B
0.26
0.24
(1)
All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994).
(2)
This drawing is subject to change without notice.
(3)
This package is a PB-free solder land design.
Pin Configuration
Position
8
Designation
Pin 1
Gate
Pin 2
Source
Pin 3
Drain
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
7.2 Recommended Minimum PCB Layout
(0.15)
2X (0.25)
2X (0.15)
0.05 MIN
ALL AROUND
TYP
1
3
SYMM
(0.35)
(0.5)
2
(R0.05) TYP
METAL UNDER
SOLDER MASK
TYP
(0.175)
SOLDER MASK
OPENING
TYP
PKG
(0.4)
(1)
All dimensions are in millimeters.
7.3 Recommended Stencil Pattern
2X (0.25)
(0.15)
2X (0.15)
1
3
SYMM
(0.35)
(0.5)
2
(R0.05) TYP
PKG
(0.175)
(0.4)
(1)
All dimensions are in millimeters.
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: CSD23280F3
9
PACKAGE OPTION ADDENDUM
www.ti.com
20-May-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CSD23280F3
ACTIVE
PICOSTAR
YJM
3
3000
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
5
CSD23280F3T
ACTIVE
PICOSTAR
YJM
3
250
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
5
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
20-May-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Jul-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
CSD23280F3
PICOST
AR
YJM
3
3000
180.0
8.4
CSD23280F3
PICOST
AR
YJM
3
3000
178.0
8.4
Pack Materials-Page 1
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
0.7
0.79
0.44
4.0
8.0
Q2
0.7
0.79
0.44
4.0
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Jul-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD23280F3
PICOSTAR
YJM
3
3000
182.0
182.0
20.0
CSD23280F3
PICOSTAR
YJM
3
3000
220.0
220.0
35.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2016, Texas Instruments Incorporated
Similar pages