CYStech Electronics Corp. Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3 Features • Low VCE(SAT), VCE(SAT)= -387mV (Typ.) @ IC/IB=-1A/-100mA • High breakdown voltage, BVCEO=-160V • Complementary to BTC2383K3 • Pb-free lead plating and halogen-free package Symbol Outline BTA1013K3 TO-92L B：Base C：Collector E：Emitter Ordering Information Device BTA1013K3-0-TB-G BTA1013K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / bag, 10 bags/box, 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTA1013K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limits -160 -160 -7 -1 -2 (Note) 0.9 139 -55~+150 -55~+150 Unit V V V A A W °C/W °C °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(ON) *hFE 1 *hFE 2 fT Cob Min. -160 -160 -7 -0.45 90 100 50 - Typ. -60 -140 -387 -0.83 13 Max. -100 -100 -100 -300 -750 -1.2 -0.75 200 20 Unit V V V nA nA mV mV mV V V MHz pF Test Conditions IC=-100μA IC=-10mA IE=-10μA VCB=-160V VEB=-7V IC=-100mA, IB=-10mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-5mA VCE=-5V, IC=-10mA VCE=-5V, IC=-200mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTA1013K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.6 0.16 1mA -IC, Collector Current(A) -IC, Collector Current(A) 0.14 0.12 0.1 0.08 500uA 400uA 300uA 0.06 0.04 200uA 0.02 5mA 0.5 0.4 2.5mA 0.3 2mA 0.2 1.5mA 0.1 -IB=500uA -IB=100uA 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 1 1.4 20mA 0.8 -IC, Collector Current(A) -IC, Collector Current(A) 0.9 8mA 6mA 0.7 0.6 0.5 4mA 0.4 0.3 -IB=2mA 0.2 1.2 50mA 1 25mA 0.8 10mA 0.6 -IB=5mA 0.4 0.2 0.1 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=-1V VCE=-2V Current Gain---HFE Current Gain---HFE 6 Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 BTA1013K3 10 100 -IC, Collector Current(mA) 1000 1 10 100 -IC, Collector Current(mA) 1000 CYStek Product Specification Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE VCE=-5V 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 1 10 100 -IC, Collector Current(mA) 1000 1 10 100 -IC, Collector Current(mA) On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 On Voltage---(mV) Saturation Voltage---(mV) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 10 100 -IC, Collector CurrentmA) 1 1000 10 100 -IC, Collector Current(mA) 1000 Power Derating Curve Capacitance vs Reverse-biased Voltage 1.2 Power Dissipation---PD(W) 1000 Cib 100 10 Cob 0.9 0.6 0.3 0 1 0.1 BTA1013K3 1000 100 100 1 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C VBEON@VCE=-1V VBESAT@IC=10IB Capacitance---(pF) 1000 1 10 -VR, Reverse-biased Voltage(V) 100 0 25 50 75 100 125 150 175 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 5/7 TO-92L Taping Outline DIM A1 A T d d1 P P0 P2 F1, F2 △h W W0 W1 W2 H H0 L1 D0 t1 t2 P1 △P BTA1013K3 Item Millimeters Component body width Component body height Component body thickness Lead wire diameter Lead wire diameter 1 Pitch of component Feed hole pitch Hole center to component center Lead to lead distance Component alignment, F-R Tape width Hole down tape width Hole position Hole down tape position Height of component from tape center Lead wire clinch height Lead wire (tape portion) Feed hole diameter Taped lead thickness Carrier tape thickness Position of hole Min. 4.70 7.80 3.70 0.35 0.60 12.40 12.50 6.05 2.20 -1.00 17.50 5.50 8.50 19.00 15.50 2.50 3.80 0.35 0.15 3.55 Max. 5.10 8.20 4.10 0.55 0.80 13.00 12.90 6.65 2.80 1.00 19.00 6.50 9.50 1.00 21.00 16.50 4.20 0.45 0.25 4.15 Component alignment -1.00 1.00 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA1013K3 CYStek Product Specification Spec. No. : C233K3 Issued Date : 2013.05.09 Revised Date : 2013.12.25 Page No. : 7/7 CYStech Electronics Corp. TO-92L Dimension Marking: Product Name A1013 Date Code: Year+Month □□ Year: 7→2007, 8→2008 Month: 1→1, 2→2, ‧‧‧, 9→9, A→10, B→11, C→12 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92L Plastic Package CYStek Package Code: K3 Inches DIM Min. 0.146 0.050 0.014 0.024 0.014 0.185 0.157 Max. 0.161 0.062 0.022 0.031 0.018 0.201 - Millimeters Min. Max. 3.700 4.100 1.280 1.580 0.350 0.550 0.600 0.800 0.350 0.450 4.700 5.100 4.000 - A A1 b b1 c D D1 Notes: 1.Controlling dimension: millimeters. DIM E e e1 L ϕ h Inches Min. 0.307 Max. 0.323 *0.05 0.096 0.543 0.000 0.104 0.559 0.063 0.012 *: Typical Millimeters Min. Max. 7.800 8.200 *1.270 2.440 2.640 13.800 14.200 1.600 0.000 0.300 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1013K3 CYStek Product Specification