Kexin BAP64-04-HF Pin diode Datasheet

Diodes
SMD Type
PIN Diodes
BAP64-04/05/06-HF (KAP64-04/05/06-HF)
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
1
0.55
● Low diode capacitance
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● High voltage, current controlled
● RF resistor for RF attenuators and switches
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● Low diode forward resistance
+0.2
-0.1
● Low series inductance
0-0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
0.68 -0.1
1.1
● For applications up to 3 GHz.
BAP64-05-HF
BAP64-04-HF
BAP64-06-HF
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
VR
175
V
Continuous Forward Current
IF
100
mA
Power Dissipation @ Ts = 90 °C
PD
250
mW
RθJA
500
℃/W
Continuous Reverse Voltage
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
TJ
150
Tstg
-65 to 150
℃
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Diodes
SMD Type
PIN Diodes
BAP64-04/05/06-HF (KAP64-04/05/06-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Forward voltage
VF
Reverse voltage leakage current
IR
Diode forward resistance
(Note.1)
rD
Test Conditions
Max
Unit
IF= 50 mA
1.1
V
VR=175V
10
VR=20 V
1
Cd
Series inductance
LS
Charge carrier life time
TL
Typ
IF = 0.5 mA , f = 100 MHz
40
IF = 1 mA , f = 100 MHz
20
IF = 10 mA , f = 100 MHz
3.8
IF = 100 mA , f = 100 MHz
1.35
VR= 0 V, f= 1 MHz
Diode capacitance
Min
VR= 1 V, f= 1 MHz
0.5
nH
when switched from IF = 10 mA to
IR = 6mA; RL = 100 Ω;
measured at IR = 3 mA
1.55
us
2
BAP64-04-HF BAP64-05-HF BAP64-06-HF
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5K F
6K F
0.35
IF=10mA, f=100MHz
■ Marking
4K F
pF
1.4
Note.1: Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Ω
0.52
VR= 20 V, f= 1 MHz
NO
uA
Diodes
SMD Type
PIN Diodes
BAP64-04/05/06-HF (KAP64-04/05/06-HF)
■ Typical Characterisitics
Forward
Characteristics
(nA)
REVERSE CURRENT IR
T=
a 2
5℃
T=
a 1
00
℃
IF
FORWARD CURRENT
10
1
0.1
0.2
0.4
0.6
0.8
FORWARD VOLTAGE
1.0
VF
100
Characteristics
Ta=100℃
10
Ta=25℃
1
0.1
1.2
0
35
(V)
70
105
REVERSE VOLTAGE
Capacitance Characteristics Per Diode
0.5
Reverse
1000
(mA)
100
140
VR
175
(V)
Power Derating Curve
300
Ta=25℃
f=1MHz
250
PD
0.3
POWER DISSIPATION
JUNCTION CAPACITANCE
CJ (pF)
(W)
0.4
0.2
0.1
0.0
200
150
100
50
0
2
4
6
8
10
12
REVERSE VOLTAGE
14
VR
(V)
16
18
20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃)
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