DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS (@ TJ Max) RDS(ON) Max ID @TC = +25°C Low On-Resistance High BVDSS Rating for Power Application 650V 3.5Ω @ VGS = 10V 2.8A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO251 (Type TH) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) G Top View Bottom View D S Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMG3N60SJ3 Notes: Case TO251 (Type TH) Packaging 75 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3N60SJ YYWW DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 =Manufacturer’s Marking 3N60SJ = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 17 = 2017) WW or WW = Week Code (01 to 53) 1 of 7 www.diodes.com January 2017 © Diodes Incorporated DMG3N60SJ3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +100°C ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) Peak Diode Recovery dv/dt IS IDM IAS EAS dv/dt Value 600 ±30 2.8 1.8 2.5 4.2 1.0 33 5 Unit V V A A A A mJ V/ns Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Electrical Characteristics RθJA RθJC TJ, TSTG Unit W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Value 41 16 49 3.0 -55 to +150 Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 600 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 4.0 3.5 1.5 V Ω V VDS = VGS, ID = 250µA VGS = 10V, ID = 1.5A VGS = 0V, IS = 3.0A Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 354 41 4 2.6 12.6 1.7 7.1 10.6 22 34 28 198 952 pF VDS = 25V, f = 1.0MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 480V, ID = 2.5A, VGS = 10V ns VDD = 300V, RG = 25Ω, ID = 2.5A, VGS = 10V ns nC dI/dt = 100A/μs, VDS = 100V, IF = 2.5A 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMG3N60SJ3 5 VGS = 10V VDS = 10V VGS = 5V 4 0.8 VGS = 6V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1 VGS = 20V 3 VGS = 8V 2 VGS = 4.5V 0.6 TA = 150°C T A = 125°C 0.4 T A = 25°C T A = 85°C TA = -55°C 0.2 1 VGS = 4V 5 10 15 20 25 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 4 3.5 VGS = 10V 3 2.5 2 1.5 0 0.5 1 1.5 2 2.5 ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 0 0 5 8 ID = 1.5A 6 4 9 5 10 15 20 25 30 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 3 VGS = 10V TA = 150°C 8 7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 10 2 0 3 2 TA = 125°C 6 T A = 85°C 5 4 T A = 25°C 3 2 TA = -55°C 1 00 0.5 1 1.5 2 2.5 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 3 3 of 7 www.diodes.com 2.5 VGS = 10V 2 ID = 4A 1.5 1 0.5 0 -50 -25 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature January 2017 © Diodes Incorporated 3.8 8 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMG3N60SJ3 7 6 5 VGS = 10V I D = 1.5A 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 3 3.6 3.4 I D = 1mA 3.2 I D = 250µA 3 2.8 2.6 2.4 2.2 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure vs.Ambient JunctionTemperature Temperature Figure8 8Gate GateThreshold Threshold Variation Variation vs. 1000 f=1MHz CT , JUNCTION CAPACITANCE (pF) C iss I S, SOURCE CURRENT (A) 2.5 2 TA = 150°C 1.5 T A = 25°C T A = 125°C 1 T A = 85°C T A = -55°C 0.5 0 0 C oss 10 Crss 1 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance R DS(on) Limited I D, DRAIN CURRENT (A) 8 VDS = 480V 6 I D = 2.5A 4 PW = 10µs PW = 1µs PW = 100µs PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms 0.1 2 00 40 10 10 VGS GATE THRESHOLD VOLTAGE (V) 100 TJ(m ax) = 150°C TC = 25°C 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 14 4 of 7 www.diodes.com 0.01 1 VGS = 10V Single Pulse DUT on Infinite Heatsink 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 January 2017 © Diodes Incorporated DMG3N60SJ3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JA(t) = r(t) * RJA R JA = 72°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 January 2017 © Diodes Incorporated DMG3N60SJ3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO251 (Type TH) E L3 L4 b3 c 0 E1 L5 P D D1 0 H 0 A2 L b e 01 k A DMG3N60SJ3 Document number: DS39314 Rev. 2 - 2 6 of 7 www.diodes.com TO251 (Type TH) Dim Min Max Typ A 2.20 2.40 2.30 A2 0.97 1.17 1.07 b 0.68 0.90 0.78 b3 5.20 5.50 5.33 c 0.43 0.63 0.53 D 5.98 6.22 6.10 D1 5.30 REF e 2.286 BSC E 6.40 6.80 6.60 E1 4.63 5.03 4.83 H 16.22 16.82 16.52 k 0.40REF L 9.15 9.65 9.40 L3 0.88 1.28 1.02 L4 0.75 REF L5 1.65 1.95 1.80 PØ 1.20 θ 5° 9° 7° θ1 5° 9° 7° All Dimensions in mm January 2017 © Diodes Incorporated DMG3N60SJ3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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