DMP3008SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET ® PowerDI Features and Benefits RDS(ON) Max ID Max TA = 25°C Low RDS(ON) – Ensures On-State Losses are Minimized 17mΩ @ VGS = -10V -8.6A 25mΩ @ VGS = -4.5V -7.1A Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) BVDSS -30V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) ® ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Drain PowerDI3333-8 Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 5) Part Number DMP3008SFGQ-7 DMP3008SFGQ-13 Notes: Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary S31 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) S31 PowerDI is a registered trademark of Diodes Incorporated. DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 1 of 8 www.diodes.com October 2015 © Diodes Incorporated DMP3008SFGQ ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State t<10s Continuous Drain Current (Note 7) VGS = -4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) ID Value -30 ±20 -8.6 -7.0 ID -11.7 -9.3 A ID -7.1 -5.6 A -9.6 -7.6 -80 -3.0 ID IDM IS Units V V A A A A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State t<10s RθJA Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: RθJA RθJC TJ, TSTG Value 0.9 140 72 2.2 57 30 7.1 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 2 of 8 www.diodes.com October 2015 © Diodes Incorporated DMP3008SFGQ 100 100 PW = 10µs 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 TJ(max) = 150°C TA = 25°C Single Pulse 0.01 0.1 90 P(PK), PEAK TRANSIENT POIWER (W) -ID, DRAIN CURRENT (A) 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area Single Pulse RJA = 57C/W RJA(t) = r(t) * RJA TJ - T A = P * R JA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION RDS(on) Limited D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * R JA R JA = 57°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 3 of 8 www.diodes.com 10 100 1,000 October 2015 © Diodes Incorporated DMP3008SFGQ ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1.0 100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS(ON) |Yfs| VSD -1.6 12.5 18.5 13 -0.7 -2.1 17 25 -1.0 V Static Drain-Source On-Resistance -1.1 VDS = VGS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF 2,230 328 294 6.4 47 23 9.4 5.6 10.5 8.5 90 40 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -10A nS VGS = -10V, VDS = -15V, RG = 6Ω 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 4 of 8 www.diodes.com October 2015 © Diodes Incorporated DMP3008SFGQ 30 30 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = 4.5V 20 VGS = 4.0V VGS = 3.5V 15 VGS = 3.0V 10 15 10 TA = 150C TA = 125C 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 4 Typical Output Characteristics 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() 0.04 0.03 0.02 0.01 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 8 On-Resistance Variation with Temperature DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 TA = 25C 0 2.0 0.05 0 TA = 85C TA = -55C VGS = 2.5V RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 20 5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION VGS = 10V 0 VDS = -5.0V 25 25 5 of 8 www.diodes.com 2 3 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristics 4 0.04 VGS= -4.5V TA = 150C 0.03 TA = 125C TA = 85C 0.02 TA = 25 C TA = -55C 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 30 0.05 0.04 0.03 VGS = -4.5V ID = -5A 0.02 VGS = -10V ID = -10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 9 On-Resistance Variation with Temperature October 2015 © Diodes Incorporated DMP3008SFGQ 20 VGS(TH), GATE THRESHOLD VOLTAGE(V) 18 -IS, SOURCE CURRENT (A) 2.0 1.5 1.0 0.5 16 14 12 10 8 6 4 2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 10,000 10,000 TA = 150°C -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss Crss 1,000 TA = 125°C 100 TA = 85°C 10 T A = 25°C 100 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Junction Capacitance 30 1 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION 2.5 8 6 4 2 0 0 10 20 30 40 50 Qg , TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 60 6 of 8 www.diodes.com October 2015 © Diodes Incorporated DMP3008SFGQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. PowerDI3333-8 A1 A3 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b L1(3x) e PowerDI3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PowerDI3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y X DMP3008SFGQ Document number: DS38141 Rev. 1 - 2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 C 7 of 8 www.diodes.com October 2015 © Diodes Incorporated DMP3008SFGQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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