Fairchild FDMS86520L N-channel powertrenchâ® mosfet 60 v, 22 a, 8.2 mî© Datasheet

FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
„ Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ MSL1 robust package design
„ 100% UIL tested
Applications
„ RoHS Compliant
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
22
71
(Note 1a)
-Pulsed
13.5
A
60
Single Pulse Avalanche Energy
EAS
Ratings
60
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
91
69
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86520L
Device
FDMS86520L
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
April 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3
V
60
V
29
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1
1.8
-7
mV/°C
VGS = 10 V, ID = 13.5 A
6.7
8.2
VGS = 4.5 V, ID = 11.5 A
9.1
11.7
VGS = 10 V, ID = 13.5 A,
TJ = 125 °C
9.6
11.8
VDS = 5 V, ID = 13.5 A
51
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
3470
4615
pF
625
835
pF
25
45
pF
Ω
0.6
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = 30 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 Ω
15
27
5.6
11
ns
ns
32
52
ns
tf
Fall Time
3.4
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
45
63
nC
VGS = 0 V to 4.5 V VDD = 30 V,
ID = 13.5 A
21
30
9.5
nC
4.7
nC
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.72
1.2
VGS = 0 V, IS = 13.5 A
(Note 2)
0.83
1.3
IF = 13.5 A, di/dt = 100 A/μs
IF = 13.5 A, di/dt = 300 A/μs
V
37
60
ns
21
34
nC
30
48
ns
37
59
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 13.5 A, VDD = 54 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
2
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
60
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
50
ID, DRAIN CURRENT (A)
5
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 4 V
40
30
20
VGS = 3 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
VGS = 3 V
4
VGS = 3.5 V
3
VGS = 4 V
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
40
ID = 13.5 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 13.5 A
20
TJ = 125 oC
10
TJ = 25 oC
0
100 125 150
2
IS, REVERSE DRAIN CURRENT (A)
40
TJ = 150 oC
30
TJ =
25 oC
20
TJ = -55 oC
10
0
2
3
8
10
100
VDS = 5 V
1
6
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
50
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
TJ, JUNCTION TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
VGS = 4.5 V
4
VGS = 0 V
10
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
5
TJ = 150 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
3
1.2
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 13.5 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 30 V
6
VDD = 20 V
VDD = 40 V
4
1000
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
5
10
15
20
25
30
35
40
1
0.1
45
1
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
80
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
60
VGS = 10 V
40
VGS = 4.5 V
20
o
Limited by Package
1
0.001
0.01
0.1
1
10
0
25
100
50
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
100
100 μs
10
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
o
0.01
0.01
75
o
Figure 9. Unclamped Inductive
Switching Capability
0.1
RθJC = 1.8 C/W
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
1
60
Figure 8. Capacitance vs Drain
to Source Voltage
50
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
RθJA = 125 C/W
10 s
TA = 25 oC
DC
0.1
1
10
100 300
100
10
SINGLE PULSE
RθJA = 125 oC/W
1
TA = 25 oC
0.5
-4
10
10
-3
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
VGS = 10 V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
5
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86520L N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I53
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
7
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench® MOSFET
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