Diodes DMPH6023SK3 P-channel enhancement mode mosfet Datasheet

DMPH6023SK3
Green
60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) Max
ID Max
TC = +25°C

Rated to +175°C – Ideal for High Ambient Temperature
Environments
33mΩ @ VGS = -10V
-35A

40mΩ @ VGS = -4.5V
-32A
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application

Low On-Resistance

Low Input Capacitance
This MOSFET has been designed to meet the stringent requirements
of Automotive applications.



Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
It is qualified to AECQ101, supported by a PPAP and is ideal for use
in:

Case: TO252 (DPAK)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0
V(BR)DSS
-60V
ADVANCED INFORMATION
Features
Description

Engine Management Systems

Moisture Sensitivity: Level 1 per J-STD-020

Body Control Electronics

Terminal Connections: See Diagram

DCDC Converters

Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
G
S
Pin Out Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMPH6023SK3-13
Notes:
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P6023S
YYWW
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
=Manufacturer’s Marking
P6023S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
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DMPH6023SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ADVANCED INFORMATION
Continuous Drain Current (Note 6) VGS = -10V
TC = +25°C
TC = +100°C
TA = +25°C
TA = +70°C
Steady
State
Steady
State
Value
-60
±20
-35
-27
ID
A
-7.3
-6.1
-60
-2.2
-35
60
ID
Pulsed Drain Current (380µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Units
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
2.0
80
3.2
41
1.6
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-60
—
—
—
—
—
—
-1
±100
V
µA
nA
VGS = 0V, ID = -250μA
VDS = -60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS(ON)
-3.0
33
40
-1.2
V
Static Drain-Source On-Resistance
-1.0
—
mΩ
VDS = VGS, ID = -250μA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -8A
VGS = 0V, IS = -1A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
VSD
—
—
—
—
-0.7
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
—
—
—
—
—
—
—
—
—
—
—
—
—
2,569
179
143
5
26.5
53.1
7.1
12.6
6
7.1
110
62
20
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
nS
Qrr
—
14
—
nC
V
Test Condition
VDS = -30V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -30V, ID = -5A
VGS = -10V, VDS = -30V,
RG = 3Ω, ID = -5A
IF = -5A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, see http://www.diodes.com/datasheets/ap02001.pdf
for the latest version.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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DMPH6023SK3
50
30
VDS = 5V
VGS = 10V
VGS = 4.5V
VGS = 4V
25
VGS = 3.5V
I D, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
VGS = 5V
30
20
VGS = 3V
20
15
10
T A = 125°C
T A = 150°C
10
5
T A = 175°C
VGS = 2.5V
0
0
.5
1 1.5
2 2.5 3 3.5 4 4.5
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
1
5
T A = 25°C
TA = -55°C
2
3
4
V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
VGS = 4.5V
.035
VGS = 10V
.03
.025
.02
.015
0
5
10
15
20
25
I D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
.04
I D = 10A
.09
I D = 8A
.08
.07
.06
.05
.04
.03
.02
.01
.07
0
0
4
8
12
16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
2.5
VGS = 10V
T A = 175°C
.06
RD S(ON ), DRAIN-SOURCE
ON-RESISTANCE (NO RMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
.045
.01
TA = 85°C
.1
.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
ADVANCED INFORMATION
40
TA = 150°C
.05
T A = 125°C
.04
T A = 85°C
.03
TA = 25°C
.02
T A = -55°C
.01
0
1
11
16
21
26
ID , DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
6
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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2
VGS = 10V
I D = 10A
1.5
1
.5
0
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
September 2015
© Diodes Incorporated
3
V GS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
.08
.06
VGS = 10V
I D = 10A
.04
.02
30
1.5
20
15
TA = 85°C
10
T A = 125°C
TA = 25°C
T A = 150°C
5
TA = 175°C
0
T A = -55°C
.3
.6
.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0.5
-25
0
25
50
75
100 125
150 175
TA = 175°C
T A = 150°C
10000
T A = 125°C
1000
100
T A = 85°C
10
TA = 25°C
1
.1
0
5 10 15 20 25 30 35 40 45 50 55 60
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current vs. Voltage
1.5
10
ID = 1mA
I D = 250µA
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
IDSS, DRAIN LEAKAGE CURRENT (nA)
IS, SOURCE CURRENT (A)
2
100000
25
0
2.5
0
-50
0
-50 -25 0
25
50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
10000
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
9
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCED INFORMATION
DMPH6023SK3
8
VDS = -30V
7
I D = -5A
6
5
4
3
2
Ciss
1000
C oss
1
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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100
C rss
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
40
September 2015
© Diodes Incorporated
DMPH6023SK3
100
ID, DRAIN CURRENT (A)
PW = 100µs
PW = 1s
PW = 100ms
10
PW = 10ms
PW = 1ms
1
TJ(max) = 175°C
TC = 25°C
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
.1
1
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
100
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED INFORMATION
PW = 1µs
PW = 10µs
R DS(on)
Limited
D = 0.5
D = 0.3
.1
D = 0.1
D = 0.05
D = 0.02
.01
D = 0.01
D = 0.005
R JC (t) = r(t) * RJC
R JC = 1.6°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
.001
.000001
.00001
.0001
.001
.01
.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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DMPH6023SK3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TO252 (DPAK)
ADVANCED INFORMATION
E
A
b3
7°±1°
c
L3
D
A2
L4
e
H
b(3x)
b2(2x)
Gauge Plane
0.508
D1
E1
Seating Plane
a
L
A1
2.74REF
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c
0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
—
—
e
—
— 2.286
E 6.45 6.70 6.58
E1 4.32
—
—
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
—
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TO252 (DPAK)
X1
Y1
Dimensions
C
X
X1
Y
Y1
Y2
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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DMPH6023SK3
IMPORTANT NOTICE
ADVANCED INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
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