Diodes DMP26M7UFG 20v p-channel enhancement mode mosfet powerdiâ® Datasheet

DMP26M7UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
RDS(ON) Max
ID Max
TC = +25°C
6.7mΩ @ VGS = -4.5V
-40A
9.0mΩ @ VGS = -2.5V
-40A
V(BR)DSS
-20V
Features

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD HBM Protected up to 1KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)




Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data


Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Applications





Load Switch
Power Management Functions

POWERDI3333-8
D
Pin 1
S
S
S
G
G
D
D
D
S
D
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP26M7UFG-7
DMP26M7UFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
YYWW
Marking Information
YYWW
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
Product Summary
S42
S47
S42 or S47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 7) L=0.1mH
Avalanche Energy (Note 7) L=0.1mH
Symbol
VDSS
VGSS
Value
-20
±10
Unit
V
V
ID
-18.0
-14.5
-40
A
IDM
IS
IAS
EAS
-80
-2.2
-23
28
A
A
A
mJ
Value
2.3
41
56
124
6.8
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TC = +25°C
(Note 5)
(Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
PD
RθJA
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJC
TJ, TSTG
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
—
—
—
—
—
—
-1
±100
V
µA
nA
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 8V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
—
4.2
5.4
7
-0.7
-1.0
6.7
9.0
—
-1.2
V
Static Drain-Source On-Resistance
-0.4
—
—
—
—
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -15A
VGS = -2.5V, ID = -10A
VGS = -1.8V, ID = -1A
VGS = 0V, IS = -10A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5940
835
728
3.0
75
156
8.8
22
10.7
23
121
109
60
47
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDD = -10V, ID = -20A
ns
VGS = -4.5V, VDD = -10V,
RG = 1Ω, ID = -10A
ns
nC
IF = -10A, di/dt = 100A/µs
IF = -10A, di/dt = 100A/µs
5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design
while RθJA is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L =0.1mH, TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
30.0
30
VGS=-1.8V
25
VGS=-2.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS=-1.5V
20.0
VGS=-10V
15.0
10.0
VGS=-1.2V
5.0
20
15
10
TA=125℃
5
0
0.0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.012
0.01
VGS=-1.8V
0.008
VGS=-2.5V
0.006
0.004
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
0
VGS=-4.5V
0.002
0
TA=125℃
TA=150℃
0.006
TA=85℃
TA=25℃
0.004
TA=-55℃
0.002
0
0
3
0.02
ID=-15A
0.015
0.01
0.005
ID=-10A
0
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.008
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.025
6
11
16
21
26
31
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS=-4.5V
TA=-55℃
0.03
1
0.01
TA=85℃
TA=25℃
TA=150℃
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
VDS=-5.0V
VGS=-2.0V
25.0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2
3
4
5
6
7
8
9
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
10
2
VGS=-4.5V, ID=-15.0A
1.5
1
VGS=-2.5V, ID=-10.0A
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
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DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
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April 2015
© Diodes Incorporated
0.015
0.012
0.009
1.2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VGS=-2.5V, ID=-10.0A
0.006
VGS=-4.5V, ID=-15.0A
0.003
0
1
0.8
ID=-1mA
0.6
0.2
0
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
CT, JUNCTION CAPACITANCE (pF)
100000
25
IS, SOURCE CURRENT (A)
ID=-250μA
0.4
-50
VGS=0V, TA=125℃
20
VGS=0V, TA=150℃
15
VGS=0V, TA=85℃
10
VGS=0V, TA=25℃
5
VGS=0V, TA=-55℃
f=1MHz
Ciss
10000
Coss
1000
Crss
100
0
10
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
10
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
20
1000
RDS(ON) Limited
9
7
6
5
VDS=-10V, ID=-20A
4
3
2
10
PW =10ms
1
0.1
1
0.01
0
0
20
40
60
80 100
Qg (nC)
Figure 11. Gate Charge
120
140
160
PW =100μs
PW =1ms
100
ID, DRAIN CURRENT (A)
8
VGS (V)
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
DMP26M7UFG
PW =100ms
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=-4.5V
0.01
PW =1s
PW =10s
DC
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
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April 2015
© Diodes Incorporated
DMP26M7UFG
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=122℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3

 0.203
b
0.27 0.37 0.32
b2
0.20


L
0.35 0.45 0.40
L1
0.39


e
0.65


Z

 0.515
All Dimensions in mm
A
A3
A1
D
D2
L
(4x)
Pin 1 ID
1
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
5 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DMP26M7UFG
Suggested Pad Layout
ADVANCE INFORMATION
INFORMATION
ADVANCE
NEW PRODUCT
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
G
8
Y2
5
G1
Y1
Y
1
4
Y3
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMP26M7UFG
Document number: DS37944 Rev. 1 - 2
6 of 6
www.diodes.com
April 2015
© Diodes Incorporated
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