PROCESS CPD79 Schottky Rectifier 2 Amp Schottky Rectifier Chip PROCESS DETAILS Die Size 49 x 49 MILS Die Thickness 9.8 MILS Anode Bonding Pad Area 39 x 39 MILS Top Side Metalization Al/Ni/Au - 30,000Å/3,000Å/1,500Å Back Side Metalization Ti/Ni/Au - 1,600Å/5,500Å/1,600Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,608 PRINCIPAL DEVICE TYPE CTLSH2-40M832 R0 (19-July 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD79 Typical Electrical Characteristics R0 (19-July 2010) w w w. c e n t r a l s e m i . c o m