BSZ0909ND MOSFET PowerStage3x3 PowerStage3x3 Features ·DualN-channelOptiMOS™MOSFET ·Enhancementmode ·Logiclevel(4.5Vrated) ·Avalancherated ·100%Lead-free;RoHScompliant ·Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 18 mΩ ID 20 A QOSS 2.3 nC QG(0V..4.5V) 1.8 nC Type/OrderingCode Package Marking RelatedLinks BSZ0909ND PG-WISON-8 0909ND - Final Data Sheet 1 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND 1Maximumratings atTj=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 20 8.1 5.5 4.1 A VGS=10V,TC=25°C VGS=10V,TA=25°C1) VGS=4.5V,TA=70°C1) VGS=4.5V,TA=25°C2) Min. Typ. Max. - Continuous drain current ID - Pulsed drain current3) ID,pulse - - 40 A TC=25°C Avalanche energy, single pulse EAS - - 4 mJ ID=9A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - 17 1.9 - W TC=25°C TA=25°C,RthJA=65°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 7.5 °C/W - Device on PCB, minimal footprint RthJA - - 180 °C/W - Device on PCB, 6 cm2 cooling area RthJA - - 65 °C/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) device mounted on a minimum pad (one layer, 70 µm thick) 3) See Diagram 3 for more detailed information Final Data Sheet 3 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2 V VDS=VGS,ID=250µA - - 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 20 14.5 25 18 mΩ VGS=4.5V,ID=9A VGS=10V,ID=9A Gate resistance1) RG 3.5 7 14 Ω - Transconductance gfs - 22 - S |VDS|>2|ID|RDS(on)max,ID=9A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 270 360 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 88 120 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 11 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Rise time tr - 2.5 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Turn-off delay time td(off) - 15 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Fall time tf - 2 - ns VDD=15V,VGS=10V,ID=9A, RG,ext=6Ω Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.8 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge at threshold Qg(th) - 0.4 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate to drain charge Qgd - 0.5 - nC VDD=15V,ID=9A,VGS=0to4.5V Switching charge Qsw - 0.8 - nC VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 1.8 2.6 nC VDD=15V,ID=9A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=15V,ID=9A,VGS=0to4.5V Gate charge total Qg - 3.7 5.2 nC VDD=15V,ID=9A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 1.5 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 2.3 - nC VDD=15V,VGS=0V 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 17 A TC=25°C - 40 A TC=25°C - 0.92 1.2 V VGS=0V,IF=9A,Tj=25°C - 5 - nC VR=15V,IF=9A,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 0.8 5 4 0.6 ID[A] Ptot[W] 3 0.4 10 V 4.5 V 2 0.2 1 0.0 0 40 80 120 0 160 0 40 80 TA[°C] 120 160 TA[°C] Ptot=f(TA),minimalfootprint ID=f(TA),minimalfootprint;parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 0.5 10 µs DC 101 0.2 1 ms ID[A] ZthJC[°C/W] 100 µs 0.1 100 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 10-1 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 40 35 4.5 V 30 30 25 3.5 V 3.5 V 4V 5V RDS(on)[mΩ] ID[A] 10 V 20 3.2 V 3V 4.5 V 5V 20 6V 7V 15 10 V 8V 10 10 2.8 V 5 0 0 1 2 0 3 0 5 VDS[V] 10 15 20 30 40 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 40 50 40 30 gfs[S] ID[A] 30 20 20 10 10 150 °C 0 0 1 25 °C 2 3 4 5 0 0 VGS[V] 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 30 2.5 2.0 20 max VGS(th)[V] RDS(on)[mΩ] 1.5 typ 1.0 10 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=9A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 102 10 25 °C 150 °C Ciss Coss IF[A] C[pF] 102 101 Crss 1 10 100 0 5 10 15 20 25 100 0.0 0.2 VDS[V] 0.6 0.8 1.0 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 1 10 12 15 V 10 25 °C 6V 24 V 100 °C 8 VGS[V] IAV[A] 125 °C 100 6 4 2 10-1 100 101 102 103 0 0 tAV[µs] 1 2 3 4 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=9Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND 5PackageOutlines Figure1OutlinePG-WISON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2016-12-05 PowerStage3x3 BSZ0909ND RevisionHistory BSZ0909ND Revision:2016-12-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-05 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-12-05