Infineon BSB029P03NX3 N-channel power mosfet Datasheet

n-Channel Power MOSFET
OptiMOS™
BSB029P03NX3
Data Sheet
1.92, 2011-03-21
Preliminary
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
1
Description
OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for
highest power density and energy efficient solutions. Lowest on state resistance
in small footprint packages make OptiMOS™ P3 -30V the best choice for the
demanding requirements of load switch, high-side switch and battery
management applications. OptiMOS™ P3 products are available in high
performance packages to tackle your most challenging applications giving full
flexibility in optimizing space, efficiency and cost.
Features
•
•
•
•
•
•
•
•
•
•
P-Channel MOSFET
Very low on-resistance RDS(on)
Qualified for consumer level application
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double sided cooling
Compatible with DirectFET® package MX footprint and outline1)
100% avalanche tested
Low parasitic inductance
Low profile (<0.7 mm)
Applications
•
•
•
Load switch
High-side switch
Battery management
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS
-30
V
IFX OptiMOS webpage
RDS(on),max
2.9
mΩ
IFX OptiMOS product brief
ID
137
A
IFX OptiMOS spice models
QOSS
106
nC
IFX Design tools
Qg.typ
66
Type
Package
Marking
BSB029P03LX3 G
MG-WDSON-2
5103
1)
DirectFET ® is a trademark of International Rectifier Corporation. BSB027P03LX3 G uses DirectFET ® technology
licensed from International Rectifier Corporation
Preliminary Data Sheet
1
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
Values
ID
Pulsed drain current2)
ID,pulse
3)
Min.
Typ.
Max.
-
-
137
-
-
Unit
Note / Test Condition
A
VGS=10 V, TC=25 °C
87
VGS=10 V, TC=100 °C
26
VGS=10 V, TA=25 °C,
RthJA=45 K/W)1)
400
TC=25 °C
40
TC=25 °C
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
EAS
-
-
290
mJ
Gate source voltage
VGS
-20
-
20
V
Power dissipation
Ptot
-
-
78
W
Tj,Tstg
-40
IEC climatic category; DIN IEC 68-1
-
TC=25 °C
TA=25 °C, RthJA=451) K/W
2.8
Operating and storage temperature
ID=40 A,RGS=25 Ω
150
°C
55/150/56
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Device on PCB
RthJA
Values
Unit
Note /
Test Condition
°K/W
bottom
Min.
Typ.
Max.
-
1.0
-
-
-
1.6
top
-
-
45
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain conneciton.
PCB is vertical in still air.
Preliminary Data Sheet
2
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
30
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=1 mA
Gate threshold voltage
VGS(th)
-1.9
-2.5
-3.1
Zero gate voltage drain current
IDSS
-
0.1
10
-
10
100
-
10
100
nA
VGS=20 V, VDS=0 V
-
3.4
4.2
mΩ
VGS=6V, ID=20A
2.4
2.9
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
RG
-
2.5
Transconductance
gfs
48
95
Table 5
VDS=VGS, ID=250 µA
VDS=30V, VGS=0 V,
Tj=25 °C
µA
VDS=30 V, VGS=0 V,
Tj=125 °C
VGS=10 V, ID=30A
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
10000
15000
Output capacitance
Coss
-
4600
6100
Reverse transfer capacitance
Crss
-
340
510
Turn-on delay time
td(on)
-
27
41
Rise time
tr
-
10
15
Turn-off delay time
td(off)
-
62
93
Fall time
tf
-
12
18
Preliminary Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=15 V,
f=1 MHz
ns
VDD=15V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Values
Min.
Typ.
Max.
-
40
53
16
22
Unit
Note /
Test Condition
nC
VDD=15 V,
ID=30 A,
VGS=0 to 4.5 V
Gate to source charge
Qgs
Gate charge at threshold
Qg(th)
Gate to drain charge
Qgd
-
18
30
Switching charge
Qsw
-
41
61
Gate charge total
Qg
66
88
Gate plateau voltage
Vplateau
3.9
-
V
Gate charge total
Qg
138
183
nC
Gate charge total, sync. FET
Qg(sync)
56
75
VDS=0.1V, VGS=0 to
4.5V
Output charge
Qoss
106
142
VDD=15 V, VGS=0 V
-
VDD=15 V,
ID=30A,VGS=0 to10V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Unit
Note /
Test Condition
A
TC=25 °C
Max.
Diode continuous forward current
Is
78
Diode pulse current
IS,pulse
400
Diode forward voltage
VSD
-
0.8
1.0
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
-
116
145
nC
VR=15V, IF=Is,
diF/dt=400 A/µs
Preliminary Data Sheet
4
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Preliminary Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Preliminary Data Sheet
6
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS;ID=250µA
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Preliminary Data Sheet
7
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Preliminary Data Sheet
8
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Preliminary Data Sheet
9
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Preliminary Data Sheet
10
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Package outlines
8
Package outlines
Preliminary Data Sheet
11
1.92, 2011-03-21
OptiMOS™ Power-MOSFET
BSB029P03NX3 G
Revision History
9
Revision History
Revision History: 2011-03-21, 1.92
Previous Revision:
Revision
Subjects (major changes since last revision)
0.1
Release of target data sheet
1.9
Release of preliminary data sheet
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Edition 2011-03-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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question, please contact the nearest Infineon Technologies Office.
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Preliminary Data Sheet
12
1.92, 2011-03-21
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