1 3 T- Ma 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 x APT60S20B2CT(G) 200V 2X75A 1 *G Denotes RoHS Compliant, Pb Free Terminal Finish. 2 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular T-MAX™ Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS Symbol VR All Ratings Are Per Leg: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT60S20B2CT(G) Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5) IFSM TJ,TSTG UNIT Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 200 Volts 75 RMS Forward Current (Square wave, 50% duty) 208 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 600 Amps -55 to 150 Operating and StorageTemperature Range TL Lead Temperature for 10 Sec. 300 EVAL Avalanche Energy (2A, 30mH) 60 °C mJ STATIC ELECTRICAL CHARACTERISTICS MAX IF = 60A .83 .90 Forward Voltage IF = 120A .98 IF = 60A, TJ = 125°C .72 IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V VR = 200V Microsemi Website - http://www.microsemi.com Volts 1 VR = 200V, TJ = 125°C 25 300 UNIT mA pF 7-2006 VF TYP MIN 053-6043 Rev C Symbol APT60S20B2CT(G) DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM MIN TYP - 55 ns - 160 nC - 5 - 100 ns - 490 nC - 10 - 80 ns - 1100 nC - 27 Amps MIN TYP IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 60A, diF/dt = -200A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 60A, diF/dt = -700A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current MAX - - UNIT Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .30 RθJA Junction-to-Ambient Thermal Resistance 40 WT Package Weight oz 5.9 g D = 0.9 0.25 0.7 0.20 0.5 PDM 0.3 0.10 0.05 0 Note: t2 SINGLE PULSE 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ ( C) 053-6043 Rev C t1 Duty Factor D = t1/t2 TC ( C) 0.0218 0.119 0.160 Dissipated Power (Watts) 0.00450 0.0119 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.15 0.121 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 0.22 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 UNIT TYPICAL PERFORMANCE CURVES 200 TJ = 25°C 140 120 100 80 60 TJ = 125°C 40 0 0 1400 120A 1000 60A 800 600 400 30A 200 20 1.2 60A 15 10 30A 5 Duty cycle = 0.5 TJ = 150°C 150 100 0.4 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 3000 50 PEAK AVALANCHE CURRENT (A) 3500 2500 2000 1500 1000 25 50 10 5 7-2006 0.0 Lead Temperature Limited 50 0.2 CJ, JUNCTION CAPACITANCE (pF) 20 200 Qrr t rr 0.6 120A 25 250 IF(AV) (A) I RRM 30 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change t rr Qrr 1.0 TJ = 125°C VR = 133V 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 40 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 0.8 30A 35 1200 0 60 0 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage TJ = 125°C VR = 133V 1600 60A 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1 1 10 100 1000 2200 Time in Avalanche (µs) Figure 9. Single Pulse UIS SOA 053-6043 Rev C Qrr, REVERSE RECOVERY CHARGE (nC) 1800 120A 80 TJ = 150°C 20 TJ = 125°C VR = 133V 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 160 trr, REVERSE RECOVERY TIME (ns) TJ = -55°C 180 APT60S20B2CT(G) 120 APT60S20B2CT(G) Vr diF /dt Adjust +18V APT20M36BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Common Cathode 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 053-6043 Rev C 7-2006 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Anode 1 Common Cathode Anode 2 0.25 IRRM