DYELEC DMT2N60-TU 600v n-channel power mosfet Datasheet

2N60
600V N-Channel Power MOSFET
●
●
●
●
●
RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A
Fast switching capability
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability, high ruggedness
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
Current
2A
4.4 @ VGS =10V
Pin Definition:
Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
1. Gate
2. Drain
3. Source
Ordering Information
Package
Packing
DMP2N60-TU
TO-251
75pcs / Tube
DMD2N60-TR
TO-252
DMD2N60-TU
TO-252
2.5Kpcs / 13” Reel
75pcs / Tube
DMT2N60-TU
TO-220
50pcs / Tube
DMF2N60-TU
ITO-220
50pcs / Tube
DMK2N60-TU
TO-262
DMG2N60-TU
TO-263
50pcs / Tube
50pcs / Tube
DMG2N60-TR
TO-263
Part No.
Block Diagram
D
G
S
800pcs / 13" Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
RATINGS
600
±30
2.0
2.0
8.0
UNIT
V
V
A
A
A
EAS
115
mJ
44
W
23
W
34
W
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TO-220/TO-262/TO-263
Power Dissipation
ITO-220
PD
TO-251/TO-252
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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2N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/ITO-220
TO-262/TO-263
RATING
62.5
θJA
TO-251/ TO-252
110
TO-220/ITO-220
TO-262/TO-263
2.35
ITO-220
UNIT
°C/W
°C/W
5.5
θJC
TO-251/ TO-252
2.9
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
e
TEST CONDITIONS
BVDSS
VGS = 0V, ID = 250μA
IDSS
VDS = 600V, VGS = 0V
10
μA
VGS = 30V, VDS = 0V
100
nA
VGS = -30V, VDS = 0V
-100
nA
4
4.0
4.4
V
Ω
300
45
2
-
pF
pF
pF
10
25
20
25
5.7
1.8
2
-
ns
ns
ns
ns
nC
nC
nC
1.4
V
2.0
A
8.0
A
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
VGS = 10V, ID =1A
Static Drain-Source On-State Resistance
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =300V, ID =2A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 480V,ID= 2.4A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS = 0 V, ISD = 2.0 A
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 2A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.. Essentially independent of operating temperature
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MIN TYP MAX UNIT
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600
V
2.0
357
2
-
ns
μC
2/9
2N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
Same Type
as D.U.T.
VDD
* dv/dt controlled by RG
* SD controlled by pulse period
* D.U.T.-Device Under Test
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N60
600V N-Channel Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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2N60
600V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
200
150
100
50
50
0
0
0
0.5 1 1.5 2 2.5 3 3.5
Gate Threshold Voltage, VTH (V)
4
Drain Current, ID (A)
Continuous Drain-Source Current, ISD (A)
0
200
600
800
1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
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2N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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2N60
600V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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2N60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
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2N60
600V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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