BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA825L6S Revision History Page or Item Subjects (major changes since previous revision) Revision 2.1, 2012-10-17 all “Preliminary” status removed 14 Application for improved rejection of out-of-band jammers (LTE-Band-13) added Revision 2.0, 2012-10-12 all Preliminary data sheet 14, 15 Package drawings and information completed 13 Drawing of Application Board updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 2.1, 2012-10-17 BGA825L6S Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 3.1 3.2 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Standard Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application for improved rejection of out-of-band jammers (LTE-Band-13) . . . . . . . . . . . . . . . . . . . . 14 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Data Sheet 4 Revision 2.1, 2012-10-17 BGA825L6S List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Data Sheet Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA825L6S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application Schematic BGA825L6S including filter and shunt notch . . . . . . . . . . . . . . . . . . . . . . . 14 TSLP-6-3 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Footprint TSLP-6-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Revision 2.1, 2012-10-17 BGA825L6S List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Data Sheet Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Electrical Characteristics: TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision 2.1, 2012-10-17 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) BGA825L6S Features • • • • • • • • • • • • • • Insertion power gain: 17.0 dB High out-of-band 3rd-order intercept point at input: +8 dBm High 1dB-compression point: -7 dBm Low noise figure: 0.60 dB Low current consumption: 4.8 mA Operating frequencies: 1550 - 1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Small TSLP-6-3 leadless package (footprint: 0.9 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Application • Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others. VCC PON AI AO ESD GND GNDRF BGA 825L6 S_Blockdiagram .vsd Figure 1 Block Diagram Product Name Marking Package BGA825L6S E. TSLP-6-3 Data Sheet 7 Revision 2.1, 2012-10-17 BGA825L6S Features Description The BGA825L6S is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 dB gain and 0.6 dB noise figure at a current consumption of 4.8 mA in the application configuration described in Chapter 3.1. The BGA825L6S is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND General ground 2 VCC DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Data Sheet 8 Revision 2.1, 2012-10-17 BGA825L6S Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GNDRF VGNDRF -0.3 – 0.3 V – Current into pin VCC ICC – – 20 mA – RF input power PIN – – 0 dBm – Total power dissipation, Ptot – – 72 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM – – 2000 V according to JESD22A-114 TS < 123 °C2) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Thermal Resistance Table 3 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point RthJS 380 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W 1) Data Sheet 9 Revision 2.1, 2012-10-17 BGA825L6S Electrical Characteristics 2 Electrical Characteristics Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC – 4.8 – mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 – μA ON-mode – – 1 μA OFF-mode |S21| – 17.0 – dB – NF – 0.60 – dB ZS = 50 Ω Input return loss RLin – 16 – dB – Output return loss RLout – 18 – dB – 1/|S12| – 22 – dB – tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1dB-compression IP1dB point – -10 – dBm – Inband input 3rd-order intercept IIP3 point4) – +3 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz Out-of-band input 3rd-order intercept point5) IIP3oob – +8 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability k – >1 – Vpon Power On voltage Ipon Power On current 2 Insertion power gain Noise figure 2) 2 Reverse isolation 3) Power gain settling time 1) 2) 3) 4) 5) f = 20 MHz ... 10 GHz Based on the application described in chapter 3.1 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input power = -30 dBm for each tone Input power = -20 dBm for each tone Data Sheet 10 Revision 2.1, 2012-10-17 BGA825L6S Electrical Characteristics Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC – 4.8 – mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 – μA ON-mode – – 1 μA OFF-mode |S21| – 17.0 – dB – NF – 0.60 – dB ZS = 50 Ω Input return loss RLin – 15 – dB – Output return loss RLout – 18 – dB – Reverse isolation 1/|S12|2 – 22 – dB – tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1dB-compression IP1dB point – -7 – dBm – Inband input 3rd-order intercept IIP3 point4) – +4 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz Out-of-band input 3rd-order intercept point5) IIP3oob – +8 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability k – >1 – Vpon Power On voltage Ipon Power On current 2 Insertion power gain Noise figure 2) 3) Power gain settling time 1) 2) 3) 4) 5) f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input power = -30 dBm for each tone Input power = -20 dBm for each tone Data Sheet 11 Revision 2.1, 2012-10-17 BGA825L6S Application Information 3 Application Information 3.1 Standard Application Application Board Configuration N1 BGA825L6S GNDRF, 4 C1 (optional) AO, 3 RFout L1 RFin VCC VCC, 2 AI, 5 C2 (optional) PON PON, 6 GND, 1 BGA 825L6 S_Schematic.vsd Figure 2 Application Schematic BGA825L6S Table 6 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various DC block 1) C2 (optional) > 10nF2) 0402 Various RF bypass 3) L1 6.2nH 0402 Murata LQW type Input matching N1 BGA825L6S TSLP-6-3 Infineon SiGe LNA 1) DC block might be realized with pre-filter in GNSS applications 2) For data sheet characteristics 1μF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 12 Revision 2.1, 2012-10-17 BGA825L6S Application Information BGA 825 L6S_Application _Board .vsd Figure 3 Drawing of Application Board Vias Vias Ro4003, 0.2mm Copper 35µm FR4,0.8mm BGA825L6S_application _board _sideview.vsd Figure 4 Data Sheet Application Board Cross-Section 13 Revision 2.1, 2012-10-17 BGA825L6S Application Information 3.2 Application for improved rejection of out-of-band jammers (LTE-Band-13) Application Board Configuration according to Application Note AN304: “Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for LTE Band-13” N2 Filter N1 BGA825L6S >40dB Rejection at 787MHz GNDRF, 4 RFout AO, 3 L2 RFin VCC VCC, 2 AI, 5 C2 L1 PON PON, 6 GND, 1 C1 BGA 825 L6S_Schematic including filter and shunt notch.vsd Figure 5 Application Schematic BGA825L6S including filter and shunt notch Table 7 Bill of Materials Name Value Package Manufacturer Function C1 3.3pF 0201 Various Band-13 notch C2 10nF 0201 Various RF bypass1) L1 12nF 03015 Murata LQW type Band-13 notch L2 7.5nF 03015 Murata LQW type Input matching N1 BGA825L6S TSLP-6-3 Infineon SiGe LNA N2 Filter - Various Filter with >40dB rejection at 787MHz 1) RF bypass recommended to mitigate power supply noise Table 8 Electrical Characteristics: TA = 25 °C Parameter Symbol Values Min. nd Typ. Unit Note / Test Condition Max. Harmonic H2 -85 dBm VCC = 1.8 V, VPON = 1.8 V fIN = 787.76 MHz, PIN = +15 dBm, fH2 = 1575.52 MHz LTE band-13 2nd Harmonic H2 -85 dBm VCC = 2.8 V, VPON = 2.8 V fIN = 787.76 MHz, PIN = +15 dBm, fH2 = 1575.52 MHz LTE band-13 2 Data Sheet 14 Revision 2.1, 2012-10-17 BGA825L6S Package Information Package Information Top view Bottom view 0.9 ±0.05 0.05 MAX. 0.25 ±0.035 1) 0.8 ±0.05 3 4 2 5 6 1 0.4 ±0.05 Pin 1 marking 0.45 ±0.05 1) Dimension applies to plated terminals Figure 6 0.2 ±0.035 1) +0.01 0.39 -0.03 1.1 ±0.05 4 TSLP-6-3-PO V01 TSLP-6-3 Package Outline (top, side and bottom views) NSMD 0.4 0.4 0.3 0.3 0.45 0.25 0.45 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSLP-6-3-FP V01 Figure 7 Footprint TSLP-6-3 Type code 12 Data code (M) Pin 1 marking TSLP-6-3-MK V01 Figure 8 Marking Layout (top view) Pin 1 marking Figure 9 Data Sheet 8 1.26 0.5 2 1.1 TSLP-6-3-TP V01 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 15000) 15 Revision 2.1, 2012-10-17 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG