DSS5220TQ 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight 0.008 grams (Approximate) BVCEO > -20V IC = -2A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE(SAT) < -150mV @ -1A RCE(SAT) = 113mΩ for a Low Equivalent On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 E C C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product DSS5220TQ-7 Notes: Compliance Automotive Marking ZP3 Reel Size (inches) 7 Tape Width (mm) 8 Quantity Per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information ZP3 = Product Type Marking Code (See Table Above) YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) ZP3 Date Code Key Year Code Month Code 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 7 8 9 O N D 1 DSS5220TQ Document number: DS38605 Rev. 3 - 2 2 3 4 5 6 1 of 7 www.diodes.com June 2017 © Diodes Incorporated DSS5220TQ Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -7 V Peak Pulse Collector Current ICM -3 A Continuous Collector Current IC -2 A Symbol Value Unit 600 1.2 209 104 mW W Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 6) (Note 7) (Note 6) (Note 7) PD RθJA (Note 8) RθJL 75 TJ, TSTG -55 to +150 °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note 6, except mounted on 25mm x 25mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS5220TQ Document number: DS38605 Rev. 3 - 2 2 of 7 www.diodes.com June 2017 © Diodes Incorporated DSS5220TQ Thermal Characteristics and Derating information 10 1.6 -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.4 1.2 1.0 Note 4) 7 (Note 0.8 0.6 Note 3) 6 (Note 0.4 Pw = 10ms 1 Pw = 100ms 0.1 DC 0.01 0.2 0.001 0.1 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 1 Power Dissipation vs. Ambient Temperature 1 10 100 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA o C/W RJA = 166癈 /W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 DSS5220TQ Document number: DS38605 Rev. 3 - 2 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Figure 3 Transient Thermal Response 3 of 7 www.diodes.com 10 100 1,000 June 2017 © Diodes Incorporated DSS5220TQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO -20 -20 V V -7 -100 nA VCB = -20V, IE = 0 -50 µA VCB = -20V, IE = 0, TJ = +150°C nA VEB = -6V, IC = 0 BVCEO BVEBO Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 10) IEBO -100 225 225 200 -80 -150 DC Current Gain hFE 150 Collector-Emitter Saturation Voltage VCE(SAT) -250 V mV RCE(SAT) 113 Base-Emitter Saturation Voltage VBE(SAT) -1.1 m V Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS VBE(ON) -1.2 V ft 100 MHz Ccbo 50 pF Note: IC = -10mA IE = -100µA VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A IC = -500mA, IB = -50mA Equivalent On-Resistance Collector-Base Capacitance IC = -100µA VCE = -2V, IC = -2A Transition Frequency Test Conditions -225 IC = -1A, IB = -50mA IC = -2A, IB = -100mA IC = -2A, IB = -200mA IC = -2A, IB = -200mA IC = -2A, IB = -100mA VCE = -2V, IC = -1A VCE = -5V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. DSS5220TQ Document number: DS38605 Rev. 3 - 2 4 of 7 www.diodes.com June 2017 © Diodes Incorporated DSS5220TQ Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 4 VCE=1V IC Collector Current (A) hFE DC Current Gain 1000 800 o 100 C 600 o 25 C 400 o -55 C 200 100m 1 10 100 1k IB= -20mA -18mA -14mA -12mA -10mA 3 -8mA 2 -6mA -4mA 1 -2mA 0 10k -16mA 0 1 2 3 4 5 VCE(SAT) (V) IC Collector Current (mA) hFE v Collector Current Collector Current v VCE(SAT) 1.4 1.2 VCE=2V 1.0 1.2 o -55 C o 25 C VBE(SAT) (V) VBE(ON) (V) IC/IB=20 o -55 C 0.8 0.6 0.4 o 100 C 0.2 0.0 100m 1 10 100 1.0 o 25 C o 100 C 0.8 0.6 0.4 1k 0.2 100m 10k 1 10 100 1k 10k IC Collector Current (mA) IC Collector Current (mA) VBE(ON) v Collector Current VBE(SAT) v Collector Current 1 o T A=25 C o 100 C 0.1 0.01 VCE(SAT) (V) VCE(SAT) (V) IC/IB=20 o 25 C 0.1 IC/IB=50 IC/IB=100 0.01 IC/IB=10 o -55 C 1E-3 100m 1 10 100 1k 10k 1E-3 100m 1 10 100 1k 10k IC Collector Current (mA) IC Collector Current (A) VCE(SAT) v Collector Current VCE(SAT) v Collector Current DSS5220TQ Document number: DS38605 Rev. 3 - 2 5 of 7 www.diodes.com June 2017 © Diodes Incorporated DSS5220TQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DSS5220TQ Document number: DS38605 Rev. 3 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com June 2017 © Diodes Incorporated DSS5220TQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DSS5220TQ Document number: DS38605 Rev. 3 - 2 7 of 7 www.diodes.com June 2017 © Diodes Incorporated