10N60 600V N-Channel Power MOSFET ● RDS(ON)<0.9Ω @ VGS=10V ● Fast switching capability ● ● Low gate charge Lead free in compliance with EU RoHS directive. ● Green molding compound PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 ID (A) 0.9 @ VGS =10V 10 Pin Definition: ● 1. Gate 2. Drain 3. Source Case: TO-220,ITO-220,TO-262,TO-263 Package Ordering Information Package Packing DMT10N60-TU TO-220 50pcs / Tube DMF10N60-TU DMK10N60-TU ITO-220 TO-262 50pcs / Tube 50pcs / Tube DMG10N60-TU TO-263 50pcs / Tube DMG10N60-TR TO-263 Part No. Block Diagram D 800pcs / 13" Reel G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS RATINGS 600 ±30 UNIT V V Continuous Drain Current ID 10 A Pulsed Drain Current (Note 2) IDM 38 A EAS 700 mJ 156 W 50 W +150 -55 ~ +150 -55 ~ +150 °C °C °C Avalanche Energy Single Pulsed (Note 3) TO-220/TO-262/TO-263 Power Dissipation PD ITO-220 Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 30mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C May.2015-REV.00 www.dyelec.com 1/9 10N60 600V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient SYMBOL RATING UNIT θJA 62.5 °C/W TO-220/ITO-220 TO-262/TO-263 TO-220 0.85 θJC Junction to Case ITO-220 °C/W 2.6 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse TEST CONDITIONS BVDSS VGS=0V, ID=250μA IDSS VDS=600V, VGS 0V = IGSS VG=30V, VDS 0V = VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA = Static Drain-Source On-State Resistance RDS(ON) 9*S=10V, ID 5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =300V, ID =10A, Turn-On Rise Time tR RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, ID=10A, Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0 V, IS =10A Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt =100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 www.dyelec.com MIN TYP MAX UNIT 600 V 2.0 0.76 1 µA 100 -100 nA nA 4.0 0.9 V Ω 1570 166 18 pF pF pF 23 69 144 77 44 6.7 18.5 ns ns ns ns nC nC nC 450 4.2 1.4 V 10 A 40 A ns μC 2/9 10N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 3/9 10N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS VGS 90% 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May.2015-REV.00 www.dyelec.com Time Unclamped Inductive Switching Waveforms 4/9 10N60 600V N-Channel Power MOSFET Capacitance, (pF) Gate-Source Voltage, VCG (V) TYPICAL CHARACTERISTICS May.2015-REV.00 www.dyelec.com 5/9 10N60 600V N-Channel Power MOSFET Drain Current, ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS Transient Thermal Response Curve 100 D=0.5 0.2 NOTES: 1.ZθJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-ZθJC(t) -1 10 0.1 0.05 0.02 PDW 0.01 Single pulse 10-2 10-5 May.2015-REV.00 10-4 t1 t2 10-3 10-2 10-1 Square Wave Pulse Duration, t1 (sec) www.dyelec.com 100 101 6/9 10N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May.2015-REV.00 www.dyelec.com 7/9 10N60 600V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing Apr,2015-REV.00 www.dyelec.com 8/9 10N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. Apr.2015-REV.00 www.dyelec.com 9/9