CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 1/8 Low VCESAT PNP Epitaxial Planar Transistor BTB1590S3 Features • Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTD2444S3. • Pb-free lead plating and halogen-free package Symbol Outline BTB1590N3 SOT-323 B：Base C：Collector E：Emitter Ordering Information Device BTB1590S3-X-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTB1590S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limits -40 -25 -6 -1.5 -3 (Note) 200 625 -55~+150 -55~+150 Unit V V V A A mW °C/W °C °C Note : Single pulse, Pw=10ms Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 VBE(ON) *hFE 1 *hFE 2 fT Cob Min. -40 -25 -6 120 80 - Typ. -0.21 270 12 Max. -100 -100 -0.3 -0.4 -0.5 -1 390 - Unit V V V nA nA V V V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-400mA, IB=-20mA IC=-500mA, IB=-50mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-2V, IC=-100mA VCE=-2V, IC=-800mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 1 Rank Q R Range 120~270 180~390 BTB1590S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.9 0.25 0.2 -IC, Collector Current(A) -IC, Collector Current(A) 5mA 0.8 1mA 0.15 0.1 500uA 400uA 300uA 0.05 200uA 0.7 0.6 0.5 2.5mA 2mA 0.4 1.5mA 0.3 0.2 -IB=500uA 0.1 -IB=100uA 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 Emitter Grounded Output Characteristics 6 Emitter Grounded Output Characteristics 1.8 2.5 20mA 50mA -IC, Collector Current(A) 1.6 -IC, Collector Current(A) 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 1.4 1.2 8mA 6mA 1 0.8 4mA 0.6 0.4 -IB=2mA 2 25mA 1.5 10mA 1 -IB=5mA 0.5 0.2 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=-1V VCE=-2V Current Gain---HFE Current Gain---HFE 6 Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 BTB1590S3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 4/8 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE VCE=-5V 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 Saturation Voltage vs Collector Current 1000 VCESAT@IC=50IB Saturation Voltage---(mV) VCESAT@IC=20IB Saturation Voltage---(mV) 10000 Saturation Voltage vs Collector Current 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBEON@VCE=-1V On Voltage---(mV) VBESAT@IC=10IB Saturation Voltage---(mV) 100 1000 -IC, Collector Current(mA) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C BTB1590S3 10 100 1000 -IC, Collector CurrentmA) 1000 100 100 1 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Cutoff Frequency vs Collector Current Capacitance vs Reverse-biased Voltage 1000 VCE=-5V Cib Capacitance---(pF) Cutoff Frequency---fT(MHz) 1000 100 100 10 Cob 10 1 1 10 100 -IC, Collector Current(mA) 1000 0.1 1 10 -VR, Reverse-biased Voltage(V) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Recommended Soldering Footprint BTB1590S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTB1590S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1590S3 CYStek Product Specification Spec. No. : C313S3 Issued Date : 2015.08.28 Revised Date : Page No. : 8/8 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 Q A1 1 C BK Lp 2 XX A detail Z bp e1 W B e E D A Device Code Z Date Code θ He 0 v A 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 2 mm 1 scale Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1590S3 CYStek Product Specification