DMTH6009LK3 Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TC = +25°C 10mΩ @ VGS = 10V 59A 12.8mΩ @ VGS = 4.5V 52A BVDSS INFORMATION ADVANCED INFORMATION ADVANCED Features 60V Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Rated to +175C – Ideal for High Ambient Temperature Environments Low RDS(ON) – Ensures on State Losses are Minimized Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC/DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6009LK3Q) Mechanical Data Case: TO252 (DPAK) making it ideal for high-efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Backlighting Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) UL Flammability Classification Rating 94V-0 Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMTH6009LK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H6009L YYWW DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 =Manufacturer’s Marking H6009L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com March 2016 © Diodes Incorporated DMTH6009LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage INFORMATION ADVANCED INFORMATION ADVANCED Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value 60 ±16 14.2 11.9 ID A 59 49 80 90 20.3 20.6 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Unit V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJC TJ, TSTG Value 3.2 47 60 2.5 -55 to +175 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 - - 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) Static Drain-Source On-Resistance RDS(ON) VSD 0.7 - 1.4 8.3 9.6 0.9 2 10 12.8 1.2 V mΩ mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR - 1,925 438 41 1.7 15.6 33.5 4.7 5.3 4.5 8.6 35.9 15.7 18.2 33.1 - pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 13.5A ns VDD = 30V, VGS = 10V, Rg = 6Ω, ID = 13.5A ns nC IF = 13.5A, di/dt = 400A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated DMTH6009LK3 30.0 30 VGS=3.0V VGS=4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V 25 VGS=3.5V VGS=4.5V VGS=10.0V 20.0 15.0 10.0 VGS=2.5V 5.0 20 15 125℃ 10 150℃ 175℃ 5 85℃ 25℃ -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 4 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.01 VGS=4.5V 0.0095 0.009 0.0085 0.008 0.0075 VGS=10V 0.007 0.0065 0.006 0.08 0.06 ID=13.5A 0.04 0.02 0 2 6 10 14 18 22 26 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 1.8 0.014 VGS= 10V 0.013 0.012 150℃ 175℃ 125℃ 0.011 85℃ 0.01 0.009 25℃ 0.008 0.007 -55℃ 0.006 0.005 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCED INFORMATION ADVANCED 25.0 1.6 VGS=4.5V, ID=11.5A 1.4 1.2 VGS=10V, ID=13.5A 1 0.8 0.6 0.004 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature March 2016 © Diodes Incorporated DMTH6009LK3 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.016 VGS=4.5V, ID=11.5A 0.012 0.008 VGS=10V, ID=13.5A 0.004 0 1.6 ID=1mA 1.2 ID=250μA 0.8 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 30 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 VGS=0V, TJ=125℃ 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=175℃ VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 Ciss 1000 Coss 100 Crss VGS=0V, TJ=-55℃ 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 1000 10 RDS(ON) Limited PW =100μs ID, DRAIN CURRENT (A) 8 6 VGS (V) INFORMATION ADVANCED INFORMATION ADVANCED 0.02 VDS=30V, ID=13.5A 4 100 PW =1ms 10 0.1 2 0.01 0 0 7 21 Qg (nC) Figure 11. Gate Charge DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 14 28 35 4 of 7 www.diodes.com PW =10ms 1 PW =100ms TJ(MAX)=175℃ TA=25℃ Single Pulse DUT on 1*MRP board VGS=10V 0.01 PW =1s PW =10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 March 2016 © Diodes Incorporated DMTH6009LK3 INFORMATION ADVANCED INFORMATION ADVANCED r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=2.5℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 March 2016 © Diodes Incorporated DMTH6009LK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a INFORMATION ADVANCED INFORMATION ADVANCED b3 L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMTH6009LK3 Document number: DS37921 Rev. 3 - 2 6 of 7 www.diodes.com March 2016 © Diodes Incorporated DMTH6009LK3 IMPORTANT NOTICE INFORMATION ADVANCED INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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