RoHS 4T Series RoHS SEMICONDUCTOR TRIACs, 4A Snubberless, Logic Level and Standard MAIN FEATURES 2 SYMBOL VALUE UNIT I T(RMS) 4 A V DRM /V RRM 600 to 1000 V I GT(Q1) 5 to 50 2 2 1 1 mA 2 3 3 TO-251 (I-PAK) (4TxxF) TO-252 (D-PAK) (4TxxG) DESCRIPTION A2 The 4T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. 1 A1 A2 G TO-220AB (non-Insulated) (4TxxA) 2 3 TO-220AB (lnsulated) (4TxxAI) By using an internal ceramic pad, the 4T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (File ref. :E320098) ITO-220AB (4TxxAF) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS F =50 Hz t = 20 ms 35 F =60 Hz t = 16.7 ms 38 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A Tc = 100ºC t p = 10 ms Storage temperature range 4 TO-220AB insulated 2 Average gate power dissipation UNIT TO-251/TO-252/TO-220AB I t I2t Value for fusing VALUE Tc = 105ºC A 6 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 7 RoHS 4T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 4Txxxx SYMBOL IGT(1) QUADRANT TEST CONDITIONS V D = V DRM , R L = 3.3KΩ T j = 125°C IH(2) I T = 200 mA IL I G = 1.2 I GT (dI/dt)c(2) CW 05 10 35 I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III dV/dt(2) SW mA V D = 12 V, R L = 30Ω VGT VGD Unit TW 15 35 10 25 50 15 30 60 20 40 400 1.8 2.7 - 0.9 2.0 - - - 2.5 mA MAX. II V D = 67% V DRM , gate open ,T j = 125°C MIN. (dV/dt)c = 0.1 V/µs T j = 125°C (dV/dt)c = 10 V/µs T j = 125°C Without snubber T j = 125°C MIN. mA 10 V/µs A/ms ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 4Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 200 mA IL I G = 1.2 I GT (dV/dt)c(2) D S A 5 5 10 10 5 10 10 25 UNIT mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) T 5 10 10 25 10 10 15 25 15 20 25 40 V D = 67% V DRM , gate open, T j = 125°C MIN. 5 5 10 50 (dI/dt)c = 1.7 A/ms, T j = 125°C MIN. 0.5 1 2 5 mA mA V/µs STATIC CHARACTERISTICS SYMBOL TEST CONDITIONS VALUE UNIT VTM(2) I TM = 5.5 A, t P = 380 µs T j = 25°C MAX. 1.55 VTO(2) Threshold voltage T j = 125°C MAX. 0.85 RD(2) Dynamic resistance T j = 125°C MAX. 100 mΩ IDRM IRRM VD = VDRM VR = VRRM T j = 25°C 5 µA 1 mA V MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com Page 2 of 7 RoHS 4T Series RoHS SEMICONDUCTOR THERMAL RESISTANCE VALUE UNIT TO-220AB,TO-251, TO-252 TO-220AB Insulated, ITO-220AB 2.6 4.0 °C/W TO-252 70 TO-220AB Insulated, TO-220AB, ITO-220AB 60 SYMBOL Rth(j-c) Junction to case (AC) S = 0.5 cm 2 Rth(j-a) Junction to ambient °C/W 100 TO-251 S = Copper surface under tab. PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 35 mA Snubberless TO-220AB V V 10 mA Standard TO-220AB V V V 10 mA Standard TO-220AB 4TxxA-SW/4TxxAl-SW V V V 10 mA Logic level TO-220AB 4TxxA-T/4TxxAI-T V V V 5 mA Standard TO-220AB 4TxxA-D/4TxxAl-D V V V 5 mA Standard TO-220AB 4TxxA-TW/4TxxAI-TW V V V 5 mA Logic level TO-220AB 4TxxF-CW V V V 35 mA Snubberless I-PAK 4TxxG-CW V V V 35 mA Snubberless D-PAK 4TxxF-SW V V V 10 mA Logic level I-PAK 4TxxG-SW V V V 10 mA Logic level D-PAK 4TxxF-TW V V V 5 mA Logic level I-PAK 4TxxG-TW V V V 5 mA Logic level D-PAK 4TxxF-T/D/S/A V V V 5 /5/10/10 mA Standard I-PAK 4TxxG-T/D/S/A V V V 5 /5/10/10 mA Standard D-PAK 4TxxAF-CW V V V 35 mA Snubberless ISOWAT TO-220AB 4TxxAF-SW V V V 10 mA Logic level ISOWAT TO-220AB 4TxxAF-TW V V V 5 mA Logic level ISOWAT TO-220AB 4TxxAF-D V V V 5 mA Standard ISOWAT TO-220AB 4TxxAF-A V V V 10 mA Standard ISOWAT TO-220AB 600 V 800 V 1000 V 4TxxA-CW/4TxxAl-CW V V 4TxxA-S/4TxxAl-S V 4TxxA-A/4TxxAl-A ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 4TxxA-yy 4TxxA-yy TO-220AB 2.0g 50 Tube 4TxxAI-yy 4TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 4TxxF-yy 4TxxF-yy TO-251(I-PAK) 0.40g 80 Tube 4TxxG-yy 4TxxG-yy TO-252(D-PAK) 0.38g 80 Tube 4TxxAF-yy 4TxxAF-yy ISOWAT TO-220AB 2.5g 50 Tube Note: xx = voltage, yy = sensitivity www.nellsemi.com Page 3 of 7 RoHS 4T Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME T 06 4 A - CW Current 4 = 4A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) IGT Sensitivity T = 5mA Standard D = 5mA Standard CW = 35mA Snubberless TW = 5mA Logic Level S = 10mA Standard SW = 10mA Logic Level A = 10mA Standard Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) IT(RMS) (A) 4.5 6 4.0 5 3.5 4 TO-220AB / DPAK / IPAK 3.0 ITO-220AB TO-220AB ( insulated ) 2.5 3 2.0 2 1.5 1.0 1 0.5 I T(RMS) (A) 0 0.0 T C (°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 Fig.3 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) 2.0 1.8 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS) (A) 1E+0 R th(j-c) DPAK (S=0.5cm 2 ) 1.6 1.4 ISOWATT220AB Rth(j-a) TO-220AB / DPAK / IPAK 1.2 1.0 1E-1 TO-220AB / TO-220AB (insulated) 0.8 0.6 DPAK / IPAK 0.4 0.2 Tc(°C) 0.0 0 25 www.nellsemi.com 50 tp(s) 1E-2 75 100 125 Page4 of 7 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 RoHS 4T Series RoHS SEMICONDUCTOR Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 100 40 Tj=25°C 35 Tj=125°C t=20ms Non repetitive Tj initial=25°C 30 One cycle 25 10 20 Repetitive Tc=100°C 15 Tj max. : Vto = 0.85 V Rd = 100 mW 10 5 VTM(V) 1 Number of cycles 0 0 1 2 3 4 5 7 6 8 9 10 10 1 Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. 100 1000 Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). l GT ,l H ,l L [T j ] / l GT ,l H ,l L [T j =25°C] lTSM (A), l 2 t(A 2 s) 1000 2.5 Tj initial=25°C 2.0 IGT dI/dt limitation: 50A/µs 100 ITSM 1.5 IH & IL 1.0 10 I2t 0.5 T j (°C) 0.0 -40 tp(ms) 1 0.01 0.10 1.00 www.nellsemi.com 16 20 80 100 120 140 Fig.10 Relative variation of critical rate of decrease of main current versus junction temperature 4 A 3 2 S D 1 T j (°C) 0 10.0 100.0 S(cm 2 ) 12 60 5 R th(j-a) °(C/W) 8 40 6 Fig.11 DPAK thermal resistance junction to ambient versus copper surface under tab (priented circuit board Fr4, copper thickness:35 µm) 4 20 (dl/dt)c [T j ] / (dl/dt)c [T j specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 T 0.4 0.2 (dV/dt)c (V/µs) 0.0 0.1 1.0 0 0 10.00 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). 100 90 80 70 60 50 40 30 20 10 0 -20 24 28 32 36 40 Page 5 of 7 0 25 50 75 100 125 RoHS 4T Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 4.57(0.180) www.nellsemi.com Page 6 of 7 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) RoHS 4T Series RoHS SEMICONDUCTOR Case Style ITO-220AB 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 All dimensions in millimeters www.nellsemi.com Page 7 of 7