DMT10H010LCT Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Package 100V 9.5mΩ @VGS = 10V TO220AB ID TC = +25°C 98A Description Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications Mechanical Data Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO220AB Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: TO220AB – 1.85 grams (Approximate) TO220AB Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMT10H010LCT Notes: Case TO220AB Packaging 50 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 10H010L = Manufacturer’s Marking 10H010L = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 18 = 2018) WW or WW = Week Code (01 to 53) YYWW DMT10H010LCT Document number: DS37976 Rev. 5 - 2 1 of 7 www.diodes.com February 2018 © Diodes Incorporated DMT10H010LCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +100°C TC = +25°C Continuous Drain Current Maximum Continuous Body Diode Forward Current Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.3mH (Note 7) Avalanche Energy, L = 0.3mH (Note 7) Unit V V IS IDM IAS EAS Value 100 ±20 98 62 90 92 10 15 Symbol PD RθJA PD RθJC TJ, TSTG Value 2 61 139 0.9 -55 to +150 Unit W °C/W W °C/W °C ID A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range TA = +25°C TC = +25°C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 1.9 6.9 8 10 0.8 3.0 9.5 12 20 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 13A VGS = 6V, ID = 13A VGS = 4.5V, ID = 5A VGS = 0V, IS = 13A Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 4166 764 44 2 58.4 11.4 14.2 11.6 14.1 42.9 22 49.8 85.1 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 13A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 13A, RG = 6Ω ns nC IF = 13A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMT10H010LCT Document number: DS37976 Rev. 5 - 2 2 of 7 www.diodes.com February 2018 © Diodes Incorporated DMT10H010LCT 30 30 VGS = 10.0V VDS=5V VGS = 6.0V 25 25 VGS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.0V 20 VGS = 3.5V 15 10 5 20 15 10 150oC 5 VGS = 3.0V 25oC 125oC 0 0.5 1 1.5 2 2.5 V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.012 VGS = 10V 0.011 0.01 0.009 VGS = 6V 0.008 VGS = 4.5V 0.007 0.006 0.005 0.004 0 2 4 6 8 10 12 14 16 18 ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 3 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) -55oC 0 0 2 3 4 5 VGS, Gate-Source Voltage (V) Figure 2. Typical Transfer Characteristic 6 0.05 I D = 13A 0.04 0.03 0.02 I D = 5A 0.01 0 0 20 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 20 2.5 0.02 VGS = 10V 0.018 VGS = 10V 0.016 125oC 150oC 0.014 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE (NO RMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85oC 0.012 0.01 0.008 85oC 0.006 25oC 0.004 -55oC 0.002 0 0 5 10 15 20 25 30 1.5 VGS = 4.5V VGS = 6V 1 Document number: DS37976 Rev. 5 - 2 I D = 5A I D = 13A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT10H010LCT ID = 13A 2 3 of 7 www.diodes.com February 2018 © Diodes Incorporated 0.02 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAI N-SOURCE O N-RESISTANCE ( ) DMT10H010LCT 0.018 VGS = 4.5V 0.016 ID = 5A 0.014 0.012 0.01 VGS = 10V 0.008 I D = 13A 0.006 VGS = 6V 0.004 I D = 13A 0.002 3.5 3 2.5 ID = 1mA 2 1.5 ID = 250µA 1 0.5 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 30 10000 f = 1MHz VGS = 0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 25 20 15 10 TJ = 150oC 5 125oC TJ = TJ = 85oC TJ = 25oC Ciss 1000 Coss 100 Crss 10 TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 0 1.5 20 40 60 80 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 100 1000 10 RDS(ON) Limited PW =100ms PW =10ms 100 ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 VDS = 50V, ID = 13A PW =1ms PW =100µs 10 1 PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 0.1 2 0.01 0 0 10 20 30 40 Qg (nC) Figure 11. Gate Charge DMT10H010LCT Document number: DS37976 Rev. 5 - 2 50 60 0.1 1 PW =10s DC 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com February 2018 © Diodes Incorporated DMT10H010LCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R (t) r(t)* *R RθJC RθJC = =r(t) JC (t) JC RθJC = 0.93° C/W R JC = 0.93°C/W Duty t1/t2 DutyCycle, Cycle, D D == t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1,PULSE PULSEDURATION DURATION TIMES TIME (sec) t1, (sec) Figure13 13 Transient Transient Thermal Thermal Resistance Figure Resistance DMT10H010LCT Document number: DS37976 Rev. 5 - 2 5 of 7 www.diodes.com February 2018 © Diodes Incorporated DMT10H010LCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO220AB E A E/2 A1 Ø P Q H1 H1 D2 D E1 L2 D1 L1 A2 L b2 b c e TO220AB Dim Min Max Typ A 3.56 4.82 A1 0.51 1.39 A2 2.04 2.92 b 0.39 1.01 0.81 b2 1.15 1.77 1.24 c 0.356 0.61 D 14.22 16.51 D1 8.39 9.01 D2 11.45 12.87 e 2.54 e1 5.08 E 9.66 10.66 E1 6.86 8.89 H1 5.85 6.85 L 12.70 14.73 L1 4.42 L2 15.80 17.51 16.00 P 3.54 4.08 Q 2.54 3.42 All Dimensions in mm e1 DMT10H010LCT Document number: DS37976 Rev. 5 - 2 6 of 7 www.diodes.com February 2018 © Diodes Incorporated DMT10H010LCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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