TI1 LME49725MA/NOPB Powerwiseâ® dual high performance, high fidelity audio operational amplifier Datasheet

LME49725
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SNAS427A – APRIL 2008 – REVISED APRIL 2013
LME49725 PowerWise® Dual High Performance, High Fidelity Audio Operational Amplifier
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FEATURES
DESCRIPTION
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The LME49725 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49725 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49725
combines extremely low voltage noise density
(3.3nV/√Hz) with vanishingly low THD+N (0.00004%)
to easily satisfy the most demanding audio
applications. To ensure that the most challenging
loads are driven without compromise, the LME49725
has a high slew rate of ±15V/μs and an output current
capability of ±22mA. Further, dynamic range is
maximized by an output stage that drives 2kΩ loads
to within 1V of either power supply voltage and to
within 1.4V when driving 600Ω loads.
1
2
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
APPLICATIONS
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Audio Amplification
Preamplifiers
Multimedia
Phono Preamplifiers
Professional Audio
Equalization and Crossover Networks
Line Drivers
Line Receivers
Active Filters
KEY SPECIFICATIONS
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Power Supply Voltage Range: ±4.5V to ±18 V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2kΩ: 0.00004% (Typ)
– RL = 600Ω: 0.00004% (Typ)
Quiescent Current per Amplifier: 3.0 mA (Typ)
Input Noise Density: 3.3 nV/√Hz (Typ)
Slew Rate: ±15 V/μs (Typ)
Gain Bandwidth Product: 40 MHz (Typ)
Open Loop Gain (RL = 600Ω): 135 dB (Typ)
Input Bias Current: 15 nA (Typ)
Input Offset Voltage: 0.5 mV (Typ)
DC Gain Linearity Error: 0.000009 % (Typ)
Part of the PowerWise® family of energy efficient
solutions, the LME49725 consumes only 3.0mA of
supply current per amplifier while providing superior
performance to high performance, high fidelity
applications.
The LME49725's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.5mV) give the amplifier excellent
operational amplifier DC performance.
The LME49725 has a wide supply range of ±4.5V to
±18V. Over this supply range the LME49725’s input
circuitry maintains excellent common-mode and
power supply rejection, as well as maintaining its low
input bias current. The LME49725 is unity gain
stable. This audio operational amplifier achieves
outstanding AC performance while driving complex
loads with values as high as 100pF.
The LME49725 is available in 8–lead narrow body
SOIC.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
LME49725
SNAS427A – APRIL 2008 – REVISED APRIL 2013
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Connection Diagram
1
8
OUTPUT A
+
V
2
7
INVERTING INPUT A
OUTPUT B
A
NON-INVERTING
INPUT A
3
-
4
B
+
+
6
INVERTING INPUT B
5
V
NON-INVERTING
INPUT B
Figure 1. SOIC Package
See Package Number D0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Power Supply Voltage (VS = V+ - V-)
38V
−65°C to 150°C
Storage Temperature
Input Voltage
(V-)-0.7V to (V+)+0.7V
Differential Input Voltage
Output Short Circuit
±0.7V
(3)
Continuous
Power Dissipation
Internally Limited
ESD Rating (4)
ESD Rating (5)
2000V
Pins 1, 4, 7 and 8
Pins 2, 3, 5 and 6
Junction Temperature
Thermal Resistance
200V
100V
150°C
θJA (SOIC)
145°C/W
Temperature Range (TMIN ≤ TA ≤ TMAX)
–40°C ≤ TA ≤ 85°C
Supply Voltage Range
±4.5V ≤ VS ≤ ±18V
(1)
(2)
(3)
(4)
(5)
2
“Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings,
whichever is lower.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
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Electrical Characteristics for the LME49725 (1)
The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified.
Parameter
THD+N
Total Harmonic Distortion + Noise
Test Conditions
LME49725
Typ
(2)
AV = 1, VOUT = 3Vrms
RL = 2kΩ
RL = 600Ω
0.00004
0.00004
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
0.00005
Limit (3)
Units
(Limits)
%
%
0.0002
IMD
Intermodulation Distortion
GBWP
Gain Bandwidth Product
40
30
MHz (min)
SR
Slew Rate
±15
±10
V/μs (min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
7
MHz
ts
Settling time
AV = –1, 10V step, CL = 100pF
0.1% error range
1.6
μs
Equivalent Input Noise Voltage
fBW = 20Hz to 20kHz
0.4
0.8
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
3.3
20
5.2
in
Current Noise Density
f = 1kHz
f = 10Hz
1.4
3.5
VOS
Offset Voltage
ΔVOS/ΔTemp
Average Input Offset Voltage Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
0.2
PSRR
Average Input Offset Voltage Shift vs
Power Supply Voltage
ΔVS = 20V (4)
120
ISOCH-CH
Channel-to-Channel Isolation
fIN = 1kHz
fIN = 20kHz
118
112
IB
Input Bias Current
VCM = 0V
±15
ΔIOS/ΔTemp
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
0.1
IOS
Input Offset Current
VCM = 0V
11
65
nA (max)
±13.9
(V+)-2.0
(V-)+2.0
V (min)
V (min)
–10V<Vcm<10V
120
100
dB (min)
30
kΩ
–10V<Vcm<10V
1000
MΩ
–10V<Vout<10V, RL = 600Ω
135
–10V<Vout<10V, RL = 2kΩ
135
–10V<Vout<10V, RL = 10kΩ
135
en
VIN-CM
Common-Mode Input Voltage Range
CMRR
Common-Mode Rejection
Differential Input Impedance
ZIN
Common Mode Input Impedance
AVOL
VOUTMAX
Open Loop Voltage Gain
Maximum Output Voltage Swing
IOUT
Output Current
IOUT-CC
Instantaneous Short Circuit Current
(1)
(2)
(3)
(4)
±0.5
%
μVRMS
(max)
nV/√Hz
(max)
pA/√Hz
pA/√Hz
±1.0
mV (max)
μV/°C
100
dB (min)
dB
dB
±90
nA (max)
nA/°C
110
dB (min)
dB
dB
RL = 600Ω
±13.6
RL = 2kΩ
±13.9
RL = 10kΩ
±14.0
V
±22
mA (min)
+45
–35
mA
mA
RL = 600Ω, VS = ±17V
±11.5
V (min)
V
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are ensured by test or statistical analysis.
PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V, PSRR = |20log(ΔVOS/ΔVS)|.
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Electrical Characteristics for the LME49725(1) (continued)
The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified.
Parameter
Test Conditions
LME49725
Typ
(2)
ROUT
Output Impedance
fIN = 10kHz
Closed-Loop
Open-Loop
CLOAD
Capacitive Load Drive Overshoot
100pF
16
IS
Quiescent Current per Amplifier
IOUT = 0mA
3.0
fC
1/f Corner Frequency
4
Units
(Limits)
Ω
Ω
0.01
18
120
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Limit (3)
%
4.5
mA (max)
Hz
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Typical Performance Characteristics
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
THD+N vs Frequency
VS = 4.5V, VOUT = 1.2VRMS, RL = 600Ω
0.001
THD+N vs Frequency
VS = 15V, VOUT = 3VRMS, RL = 600Ω
0.001
0.0001
0.0001
0.00001
20
200
2k
0.00001
20
20k
200
FREQUENCY (Hz)
Figure 3.
THD+N vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 600Ω
THD+N vs Frequency
VS = 4.5V, VOUT = 1.2VRMS, RL = 2kΩ
0.1
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.001
0.0001
0.0001
0.00001
20
200
2k
0.00001
20
20k
Figure 5.
THD+N vs Frequency
VS = 15V, VOUT = 3VRMS, RL = 2kΩ
THD+N vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 2kΩ
0.1
20k
0.01
THD+N (%)
THD+N (%)
2k
Figure 4.
0.01
0.001
0.0001
0.00001
20
200
FREQUENCY (Hz)
FREQUENCY (Hz)
0.1
20k
FREQUENCY (Hz)
Figure 2.
0.1
2k
0.001
0.0001
200
2k
20k
0.00001
20
FREQUENCY (Hz)
200
2k
20k
FREQUENCY (Hz)
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
0.1
0.1
0.01
0.01
THD+N (%)
THD+N (%)
THD+N vs Frequency
VS = 4.5V, VOUT = 1.2VRMS, RL = 10kΩ
0.001
THD+N vs Frequency
VS = 15V, VOUT = 3VRMS, RL = 10kΩ
0.001
0.0001
0.0001
0.00001
20
200
2k
20k
0.00001
20
0.1
FREQUENCY (Hz)
Figure 9.
THD+N vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 10kΩ
THD+N vs Output Voltage
VS = 4.5V, RL = 600Ω, f = 1kHz
0.1
THD+N (%)
THD+N (%)
0.01
0.001
0.0001
0.00001
20
0.001
0.0001
200
2k
0.00001
10m
20k
FREQUENCY (Hz)
0.1
1
4
OUTPUT VOLTAGE (V)
Figure 11.
THD+N vs Output Voltage
VS = 15V, RL = 600Ω, f = 1kHz
THD+N vs Output Voltage
VS = 18V, RL = 600Ω, f = 1kHz
0.1
THD+N (%)
0.01
0.001
0.0001
0.00001
10m
100m
Figure 10.
0.01
THD+N (%)
20k
Figure 8.
0.01
0.001
0.0001
100m
1
10
0.00001
10m
OUTPUT VOLTAGE (V)
100m
1
10 20
OUTPUT VOLTAGE (V)
Figure 12.
6
2k
200
FREQUENCY (Hz)
Figure 13.
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Typical Performance Characteristics (continued)
0.1
THD+N vs Output Voltage
VS = 4.5V, RL = 2kΩ, f = 1kHz
0.1
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.001
0.0001
0.00001
10m
0.0001
100m
1
4
0.00001
10m
THD+N vs Output Voltage
VS = 18V, RL = 2kΩ, f = 1kHz
THD+N vs Output Voltage
VS = 4.5V, RL = 10kΩ, f = 1kHz
0.1
THD+N (%)
THD+N (%)
0.01
0.0001
0.001
0.0001
100m
1
0.00001
10m
10 20
1
Figure 16.
Figure 17.
THD+N vs Output Voltage
VS = 15V, RL = 10kΩ, f = 1kHz
THD+N vs Output Voltage
VS = 18V, RL = 10kΩ, f = 1kHz
0.1
4
0.01
THD+N (%)
0.01
THD+N (%)
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.001
0.001
0.0001
0.0001
0.00001
10m
10 20
Figure 15.
0.001
0.1
1
Figure 14.
0.01
0.00001
10m
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.1
THD+N vs Output Voltage
VS = 15V, RL = 2kΩ, f = 1kHz
100m
1
10 20
0.00001
10m
OUTPUT VOLTAGE (V)
100m
1
10 20
OUTPUT VOLTAGE (V)
Figure 18.
Figure 19.
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Typical Performance Characteristics (continued)
-20
-40
-40
CMRR (dB)
-20
-60
-80
-80
-100
-120
-120
0
200
2k
-140
20
20k
Figure 20.
Figure 21.
CMRR vs Frequency
VS = 15V, RL = 600Ω
CMRR vs Frequency
VS = 4.5V, RL = 2kΩ
0
-40
-40
-60
-80
-80
-100
-120
-120
200
2k
-140
20
20k
Figure 22.
CMRR vs Frequency
VS = 15V, RL = 2kΩ
0
-20
-20
-40
-40
CMRR (dB)
CMRR (dB)
2k
20k
Figure 23.
-60
-80
-80
-100
-100
-120
-120
2k
20k
CMRR vs Frequency
VS = 18V, RL = 2kΩ
-60
-140
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 24.
8
200
FREQUENCY (Hz)
FREQUENCY (Hz)
200
20k
-60
-100
-140
20
2k
FREQUENCY (Hz)
-20
0
200
FREQUENCY (Hz)
-20
-140
20
CMRR vs Frequency
VS = 15V, RL = 600Ω
-60
-100
-140
20
CMRR (dB)
0
CMRR (dB)
CMRR (dB)
0
CMRR vs Frequency
VS = 4.5V, RL = 600Ω
Figure 25.
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Typical Performance Characteristics (continued)
0
-20
-20
-40
-40
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
0
200
2k
-140
20
20k
2k
20k
FREQUENCY (Hz)
Figure 26.
Figure 27.
CMRR vs Frequency
VS = 18V, RL = 10kΩ
+PSRR vs Frequency
VS = 4.5V, RL = 2kΩ, VRIPPLE = 200mVP-P
0
-20
-20
-40
-40
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
200
FREQUENCY (Hz)
PSRR (dB)
CMRR (dB)
CMRR vs Frequency
VS = 15V, RL = 10kΩ
CMRR (dB)
CMRR (dB)
0
CMRR vs Frequency
VS = 4.5V, RL = 10kΩ
200
2k
-140
20
20k
200
2k
20k
200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 28.
Figure 29.
+PSRR vs Frequency
VS = 4.5V, RL = 10kΩ, VRIPPLE = 200mVP-P
+PSRR vs Frequency
VS = 4.5V, RL = 600Ω, VRIPPLE = 200mVP-P
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
0
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
200
2k
20k
200k
-140
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 30.
Figure 31.
200k
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Typical Performance Characteristics (continued)
0
-20
-20
-40
-40
-60
-80
-80
-100
-120
-120
200
2k
20k
-140
20
200k
200
2k
20k
200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 32.
Figure 33.
+PSRR vs Frequency
VS = 15V, RL = 600Ω, VRIPPLE = 200mVP-P
+PSRR vs Frequency
VS = 18V, RL = 2kΩ, VRIPPLE = 200mVP-P
0
0
-20
-20
-40
-40
PSRR (dB)
PSRR (dB)
-60
-100
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
PSRR (dB)
PSRR (dB)
0
-140
20
200
2k
20k
-140
20
200k
200
2k
20k
200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 34.
Figure 35.
+PSRR vs Frequency
VS = 18V, RL = 10kΩ, VRIPPLE = 200mVP-P
+PSRR vs Frequency
VS = 18V, RL = 600Ω, VRIPPLE = 200mVP-P
0
0
-20
-20
-40
-40
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
10
+PSRR vs Frequency
VS = 15V, RL = 10kΩ, VRIPPLE = 200mVP-P
PSRR (dB)
PSRR (dB)
+PSRR vs Frequency
VS = 15V, RL = 2kΩ, VRIPPLE = 200mVP-P
200
2k
20k
200k
-140
20
200
2k
20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 36.
Figure 37.
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200k
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Typical Performance Characteristics (continued)
-20
-20
-40
-40
PSRR (dB)
0
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
PSRR (dB)
-PSRR vs Frequency
VS = 4.5V, RL = 10kΩ, VRIPPLE = 200mVP-P
0
200
2k
20k
FREQUENCY (Hz)
-140
20
200k
200k
Figure 39.
-PSRR vs Frequency
VS = 4.5V, RL = 600Ω, VRIPPLE = 200mVP-P
-PSRR vs Frequency
VS = 15V, RL = 2kΩ, VRIPPLE = 200mVP-P
0
0
-20
-20
-40
-40
-60
-80
-60
-80
-100
-100
-120
-120
-140
20
200
20k
2k
FREQUENCY (Hz)
-140
20
200k
-PSRR vs Frequency
VS = 15V, RL = 10kΩ, VRIPPLE = 200mVP-P
20k
200k
-PSRR vs Frequency
VS = 15V, RL = 600Ω, VRIPPLE = 200mVP-P
-20
-20
-40
-40
PSRR (dB)
0
-60
-80
-60
-80
-100
-100
-120
-120
200
2k
20k
FREQUENCY (Hz)
2k
Figure 41.
0
-140
20
200
FREQUENCY (Hz)
Figure 40.
PSRR (dB)
200
2k
20k
FREQUENCY (Hz)
Figure 38.
PSRR (dB)
PSRR (dB)
-PSRR vs Frequency
VS = 4.5V, RL = 2kΩ, VRIPPLE = 200mVP-P
200k
-140
20
Figure 42.
200
2k
20k
FREQUENCY (Hz)
200k
Figure 43.
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Typical Performance Characteristics (continued)
-20
-20
-40
-40
-60
-80
-80
-100
-120
-120
200
2k
20k
-140
20
200k
200
2k
20k
FREQUENCY (Hz)
Figure 44.
Figure 45.
-PSRR vs Frequency
VS = 18V, RL = 600Ω, VRIPPLE = 200mVP-P
Crosstalk vs Frequency
VS = 4.5V, VOUT = 1.2VRMS, RL = 600Ω
0
-20
-20
-40
-40
CROSSTALK (dB)
0
-60
-80
-60
-80
-100
-120
-120
-140
20
200
2k
20k
FREQUENCY (Hz)
-140
20
200k
200
2k
FREQUENCY (Hz)
Figure 46.
Figure 47.
Crosstalk vs Frequency
VS = 15V, VOUT = 3VRMS, RL = 600Ω
Crosstalk vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 600Ω
0
-20
-20
-40
-40
CROSSTALK (dB)
0
-60
-80
-100
-140
20
20k
-60
-80
-100
-120
-120
200
2k
FREQUENCY (Hz)
20k
-140
20
Figure 48.
12
200k
FREQUENCY (Hz)
-100
CROSSTALK (dB)
-60
-100
-140
20
PSRR (dB)
-PSRR vs Frequency
VS = 18V, RL = 10kΩ, VRIPPLE = 200mVP-P
0
PSRR (dB)
PSRR (dB)
0
-PSRR vs Frequency
VS = 18V, RL = 2kΩ, VRIPPLE = 200mVP-P
200
2k
FREQUENCY (Hz)
20k
Figure 49.
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Typical Performance Characteristics (continued)
-20
-20
-40
-40
-60
-80
-100
Crosstalk vs Frequency
VS = 15V, VOUT = 3VRMS,, RL = 2kΩ
0
CROSSTALK (dB)
CROSSTALK (dB)
0
Crosstalk vs Frequency
VS = 4.5V, VOUT = 1.2VRMS,, RL = 2kΩ
-60
-80
-100
-120
-120
-140
20
200
2k
-140
20
20k
FREQUENCY (Hz)
Figure 51.
Crosstalk vs Frequency
VS = 18V, VOUT = 3VRMS,, RL = 2kΩ
Crosstalk vs Frequency
VS = 4.5V, VOUT = 1.2VRMS,, RL = 10kΩ
0
-20
-20
-40
-40
-60
-80
-100
-60
-80
-100
-120
-120
-140
20
200
2k
FREQUENCY (Hz)
-140
20
20k
200
2k
Figure 52.
Figure 53.
Crosstalk vs Frequency
VS = 4.5V, VOUT = 1.2VRMS,, RL = 600Ω
Crosstalk vs Frequency
VS = 15V, VOUT = 3VRMS,, RL = 10kΩ
0
0
-20
-20
-40
-40
-60
-80
-100
-60
-80
-100
-120
-120
-140
20
20k
FREQUENCY (Hz)
CROSSTALK (dB)
CROSSTALK (dB)
20k
Figure 50.
CROSSTALK (dB)
CROSSTALK (dB)
0
200
2k
FREQUENCY (Hz)
200
2k
FREQUENCY (Hz)
20k
-140
20
Figure 54.
200
2k
FREQUENCY (Hz)
20k
Figure 55.
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Typical Performance Characteristics (continued)
Crosstalk vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 10kΩ
0
0
-20
-20
-40
-40
CROSSTALK (dB)
CROSSTALK (dB)
Crosstalk vs Frequency
VS = 15V, VOUT = 3VRMS,, RL = 600Ω
-60
-80
-100
-80
-100
-120
-120
-140
20
0
-60
200
2k
FREQUENCY (Hz)
-140
20
20k
200
2k
FREQUENCY (Hz)
20k
Figure 56.
Figure 57.
Crosstalk vs Frequency
VS = 18V, VOUT = 3VRMS, RL = 600Ω
IMD vs Output Voltage
VS = 4.5V, RL = 600Ω
0.1
0.01
-40
THD+N (%)
CROSSTALK (dB)
-20
-60
-80
0.001
-100
0.0001
-120
-140
20
200
2k
FREQUENCY (Hz)
0.00001
10m
20k
100m
1
4
OUTPUT VOLTAGE (V)
Figure 58.
0.1
Figure 59.
IMD vs Output Voltage
VS = 15V, RL = 600Ω
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.001
0.0001
0.0001
0.00001
10m
100m
1
10 20
0.00001
10m
100m
1
10 20
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 60.
14
IMD vs Output Voltage
VS = 18V, RL = 600Ω
0.1
Figure 61.
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Typical Performance Characteristics (continued)
0.1
IMD vs Output Voltage
VS = 4.5V, RL = 2kΩ
0.1
0.01
THD+N (%)
THD+N (%)
0.01
0.001
0.001
0.0001
0.0001
0.00001
10m
100m
1
4
0.00001
10m
Figure 62.
IMD vs Output Voltage
VS = 18V, RL = 2kΩ
0.1
THD+N (%)
THD+N (%)
0.0001
0.0001
100m
1
0.00001
10m
10 20
100m
1
4
OUTPUT VOLTAGE (V)
Figure 64.
Figure 65.
IMD vs Output Voltage
VS = 15V, RL = 10kΩ
0.1
IMD vs Output Voltage
VS = 18V, RL = 10kΩ
0.01
THD+N (%)
0.01
THD+N (%)
IMD vs Output Voltage
VS = 4.5V, RL = 10kΩ
0.001
OUTPUT VOLTAGE (V)
0.001
0.001
0.0001
0.0001
0.00001
10m
10 20
0.01
0.001
0.1
1
Figure 63.
0.01
0.00001
10m
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.1
IMD vs Output Voltage
VS = 15V, RL = 2kΩ
100m
1
10 20
0.00001
10m
OUTPUT VOLTAGE (V)
100m
1
10 20
OUTPUT VOLTAGE (V)
Figure 66.
Figure 67.
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Typical Performance Characteristics (continued)
Total Quiescent Current
vs Power Supply
100
6.5
Voltage Noise Density vs Frequency
VCC = 15V, VEE = –15V, No Load
6.3
VOLTAGE NOISE (nV/ Hz)
6.1
QCURR (mA)
5.9
5.7
5.5
5.3
5.1
4.9
10
4.7
4.5
1
4
6
8
10
12
14
16
18
1
10
POWER SUPPLY (V)
100
1k
10k
100k
FREQUENCY (Hz)
Figure 68.
Figure 69.
Current Noise vs Frequency
VCC = 15V, VEE = –15V, No Load
CURRENT NOISE DENSITY (pA/ Hz)
10
9
8
7
6
5
4
3
2
1
0
1
10
100
1k
10k
FREQUENCY (Hz)
Figure 70.
16
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SNAS427A – APRIL 2008 – REVISED APRIL 2013
APPLICATION INFORMATION
OPERATING RATINGS AND BASIC DESIGN GUIDELINES
The LME49725 has a supply voltage range from +9V to +36V single supply or ±4.5V to ±18V dual supply.
Bypass capacitors for the supplies should be placed as close to the amplifier as possible. This will help minimize
any inductance between the power supply and the supply pins. In addition to a 10μF capacitor, a 0.1μF capacitor
is also recommended.
The amplifier’s inputs lead lengths should also be as short as possible. If the op amp does not have a bypass
capacitor, it may oscillate.
Demonstration Board Schematic
JP1
R3
JMPR1
JP2
R2
JMPR2
P1
R1
-
JMPR3
+
1
2
VDD
1
2
+
R4
P2
C3
JP5
JP3
1
2
3
C1
+
VSS
C4
R7
R8
C2
JMPR4
1
2
JMPR5
JP4
R6
-
JMPR6
P3
+
1
2
R9
P4
Bill Of Materials For Demonstration Board (Inverting Configuration)
Designator (1)
Description
Part Number
Mfg
Ceramic Capacitor 0.1μF, 10% 50V
0805 SMD
C1, C2
C0805C104K3RAC7533
Kemet
Tantalum Capacitor 10μF, 10% 20V,
B-size
C3, C4
T491B106K025AT
Kemet
CRCW0805000020EA
Vishay
CRCW080510K0FKEA
Vishay
Resistor 0Ω, 1/8W, 1% 0805 SMD
JMPR1, JMPR4, R1, R4, R6, R9
Resistor 10kΩ, 1/8W, 1% 0805 SMD
R2, R3, R8, R7
Header, 2-Pin
JP1, JP2, JP3, JP4
Header, 3-Pin
JP5
SMA stand-up connectors
(1)
P1-P4 (Optional)
132134
Amphenol COnnex
Do not stuff JMPR2, JMPR3, JMPR5, and JMPR6.
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Demonstration Board Layout
Figure 71. Silkscreen Layer
Figure 72. Top Layer
Figure 73. Bottom Layer
18
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SNAS427A – APRIL 2008 – REVISED APRIL 2013
REVISION HISTORY
Rev
Date
1.0
04/03/08
Description
Initial release.
A
04/03/13
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
www.ti.com
30-Jun-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LME49725MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
L49725
MA
LME49725MAX/NOPB
LIFEBUY
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
L49725
MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jun-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LME49725MAX/NOPB
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.4
2.0
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LME49725MAX/NOPB
SOIC
D
8
2500
349.0
337.0
45.0
Pack Materials-Page 2
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