Transistors SMD Type PNP Transistors HN1A01FU (KN1A01FU ) ■ Features ● High voltage and high current ● High hFE: hFE = 120~400 ● Excellent hFE linearity ● Small package (Dual type) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150 Base current IB -30 Collector Power Dissipation PC 200 Junction Temperature Storage Temperature range TJ 125 Tstg -55 to 125 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 V Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz Transition frequency fT VCE= -10V, IC= -1mA 120 nA V 400 7 80 Unit pF MHz ■ Classification of hfe Type HN1A01FU-Y HN1A01FU-G Range 120-240 200-400 Marking D1Y D1G www.kexin.com.cn 1 Transistors SMD Type PNP Transistors HN1A01FU ■ Typical Characterisitics 2 www.kexin.com.cn (KN1A01FU )