Diodes DMN6070SSD 60v dual n-channel enhancement mode mosfet Datasheet

DMN6070SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
NEW PRODUCT
ADVANCE INFORMATION
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
80mΩ @ VGS = 10V
4.1A
100mΩ @ VGS = 4.5V
3.6A
60V
•
Low On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
•
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Case: SO-8
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
ideal for high efficiency power management applications.
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Backlighting
•
Terminal Connections Indicator: See Diagram
•
Power Management Functions
•
•
DC-DC Converters
Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (Approximate)
D1
SO-8
S1
D1
G1
D1
S2
D2
G2
D2
Top View
D2
G1
G2
S1
Top View
Pin Configuration
S2
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN6070SSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
8
5
= Manufacturer’s Marking
N6070SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
N6070SD
YY WW
1
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
4
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© Diodes Incorporated
DMN6070SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
60
±20
3.3
2.6
ID
A
4.1
3.4
2.0
12
10
5.9
ID
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L=0.1mH
Avalanche Energy (Note 7) L=0.1mH
Units
V
V
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA= +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Value
1.2
104
61
1.5
83
50
14.5
-55 to +150
RθJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
1
±100
V
μA
nA
ID = 250μA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= ±16V, VDS= 0V
VGS(th)
1.0
RDS (ON)
⎯
VSD
⎯
3.0
80
100
1.1
V
Static Drain-Source On-Resistance
⎯
68
70
0.75
ID= 250μA, VDS= VGS
VGS= 10V, ID= 4.5A
VGS= 4.5V, ID= 3.5A
IS= 12A, VGS= 0V
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
588
26.5
20
1.5
5.6
12.3
1.7
1.9
3.5
4.1
35
11
18
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS= 4.5V)
Total Gate Charge (VGS= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS= 30V, VGS= 0V
f= 1MHz
Ω
Vgs= 0V, Vds= 0V, f=1MHz,
nC
VDS= 30V, ID= 3A
nS
VDD= 30V, VGS= 10V
RL ≅ 50Ω, RG ≅ 20Ω
nS
nC
IS = 12A, dI/dt = 100A/μs
IS = 12A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
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January 2015
© Diodes Incorporated
DMN6070SSD
15.0
15
VDS = 5.0V
VGS = 10V
12.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.0V
9.0
VGS = 3.5V
6.0
VGS = 3.0V
9
T A = 150°C
TA = 125°C
6
TA = 85°C
TA = 25°C
3
3.0
TA = -55°C
VGS = 2.5V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
5
0.15
0.09
VGS = 4.5V
0.06
VGS = 10V
0.03
0
0.3
3
6
9
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.12
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.5
0.4
0.3
0.2
ID = 12A
0.1
0.25
0.2
TA = 150°C
0.15
TA = 125°C
TA = 85°C
0.1
TA = 25°C
0.05
0
ID = 6A
2
3
4
5
6
7
8
9
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
10
2.4
VGS = 4.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCE INFORMATION
12
VGS = 5.0V
VGS = 10V
ID = 10A
2
VGS = 4.5V
ID = 5A
1.6
1.2
0.8
T A = -55°C
0
0
3
6
9
12
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
15
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0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
January 2015
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
VGS = 4.5V
ID = 5A
2
ID = 1mA
ID = 250µA
1.5
VGS = 10 V
ID = 10A
1
0.5
-50
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
100
20
-ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
T A = 150°C
10
TA = 125°C
T A = 85°C
TA = 25°C
5
PW = 100µs
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
DC
PW = 10s
PW = 1s
0.1
PW = 100ms
PW = 10ms
PW = 1ms
TJ(max) = 150°C
TA = 25°C
VGS = -8V
Single Pulse
0.001 DUT on 1 * MRP Board
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
100
10
V GS GATE THRESHOLD VOLTAGE (V)
10000
f=1MHz
1000
Ciss
100
Coss
Crss
10
1
0
1
0.01
TA = -55°C
0
RDS(on)
Limited
10
15
C T , JUNCTION CAPACITANCE (pF)
NEW PRODUCT
ADVANCE INFORMATION
DMN6070SSD
10
20
30
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
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9
VDS = 30V
I D = 3A
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 12 Gate Charge
14
January 2015
© Diodes Incorporated
DMN6070SSD
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * Rθ JA
RθJA = 108°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.254
NEW PRODUCT
ADVANCE INFORMATION
1
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN6070SSD
Document number: DS36342 Rev. 3 - 2
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DMN6070SSD
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2015, Diodes Incorporated
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DMN6070SSD
Document number: DS36342 Rev. 3 - 2
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