Diodes DSS4160FDB-7 Dual npn low vce transistor Datasheet

DSS4160FDB
60V DUAL NPN LOW VCE(sat) TRANSISTOR
Features
Mechanical Data



BVCEO > 60V
IC = 1A high Continuous Collector Current
RCE(sat) = 180mΩ for a Low Equivalent On-Resistance

Case: U-DFN2020-6

Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Rating 94V-0

Low Saturation Voltage VCE(sat) < 220mV @ 1A

Moisture Sensitivity: Level 1 per J-STD-020

PD up to 2.47W for power demanding applications


RθJA efficient, 40% lower than SOT26
Terminals: Finish  NiPdAu, Solderable per MIL-STD-202,
Method 208 e4

Low profile 0.6mm high package for thin applications

Weight: 0.0065 grams (Approximate)


Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Application




Load Switches
Power Management
Charging Circuits
Power Switches (e.g. Motors, Fans)
U-DFN2020-6
6
5
4
C1
B2
E2
6
C2
C1
1
1
Bottom View
2
3
E1
B1
C2
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Notes:
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DSS4160FDB-7
2B
7
8
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2B
YWX
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
2B = Product type Marking Code
Y = Year: 0~9
W = Week: A~Z : 1~26 week;
a~z; 27~52 week; z represents
52 and 53 week
X = A~Z: Internal code
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DSS4160FDB
Absolute Maximum Ratings – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
60
60
7
1
1.5
300
1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 6 & 7)
(Notes 6 & 8)
(Note 9)
PD
RJA
RJL
TJ, TSTG
Value
405
510
1650
2470
308
245
76
51
18
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
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DSS4160FDB
Thermal Characteristics and Derating Information
2.5
1
See note 5 & 7
Max Power Dissipation (W)
IC Collector Current (A)
VCE(sat)
Limited
DC
100m
1s
100ms
10ms
10m
1ms
1m
Single Pulse
T amb=25°C
100µs
100m
1
10
VCE Collector-Emitter Voltage (V)
Note 6 & 8
2.0
Note 6 & 7
1.5
Note 5 & 7
1.0
Note 5 & 8
0.5
0.0
0
20
Maximum Power (W)
Thermal Resistance (°C/W)
Single Pulse
D=0.05
D=0.1
1
10
100
Single Pulse
T amb=25°C
See note 5 & 7
10
1
0.1
100µ
1k
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
100
70
Maximum Power (W)
80
Thermal Resistance (°C/W)
100 120 140 160
100
Transient Thermal Impedance
T amb=25°C
60
See note 6 & 7
D=0.5
40
30
80
Derating Curve
Pulse Width (s)
50
60
Temperature (°C)
Safe Operating Area
330
300
T amb=25°C
270
See note 5 & 7
240
210
180 D=0.5
150
120
90 D=0.2
60
30
0
100µ 1m 10m 100m
40
D=0.2
Single Pulse
20
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Single Pulse
T amb=25°C
See note 6 & 7
10
1
100µ
Datasheet Number: DS37801 Rev.1 - 2
10m 100m
1
10
100
1k
Pulse Power Dissipation
Transient Thermal Impedance
DSS4160FDB
1m
Pulse Width (s)
Pulse Width (s)
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DSS4160FDB
Electrical Characteristics – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Emitter-Base Cutoff Current
IEBO
DC Current Gain (Note 11)
hFE
Min
60
60
7



290
150
70



Typ






430
220
110
90
170
185
180




Max



100
50
100



120
220
240
240
1
1.1
1.1
0.9
Unit
V
V
V
nA
µA
nA

Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
Equivalent On-Resistance (Note 11)
RCE(sat)
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
Base-Emitter Turn-on Voltage (Note 11)
VBE(on)





fT
90
175

MHz
Cob (c)
ton
td
tr
toff
ts
tf







4
105
15
90
540
410
130
6






pF
ns
ns
ns
ns
ns
ns
Transition Frequency
Output (Collector) Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Note:
mV
mΩ
V
V
Test Conditions
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 48V, IE = 0
VCB = 48V, IE = 0, TA = +150°C
VEB = 5.6V, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 500mA, IB = 50mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 50mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 0.5A
VCE = 10V, IC = 50mA,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -0.5A,
IB1 = -IB2 = 25mA
11. Measured under pulsed conditions. Pulse width  300µs. Duty cycle 2%.
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
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DSS4160FDB
Typical Electrical Characteristics
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
(@TA = +25°C, unless otherwise specified.)
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DSS4160FDB
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
A
A3
A1
Seating Plane
D
D2
D2
R0.1
50
(Pin
#
1 ID)
E
z1
E2
z1
k
L
U-DFN2020-6
Type B
Dim
Min
Max Typ
A
0.545 0.605 0.575
A1
0.00 0.05 0.02
A3
0.13
b
0.20 0.30 0.25
D
1.95 2.075 2.00
D2
0.50 0.70 0.60
e
0.65
E
1.95 2.075 2.00
E2
0.90 1.10 1.00
k
0.45
L
0.25 0.35 0.30
z
0.225
z1
0.175
All Dimensions in mm
e
z
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
X2
C
Dimensions
X1(2x)
Y2 Y1(2x)
G
G1
Y
C
G
G1
X
X1
X2
Y
Y1
Y2
Value
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
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DSS4160FDB
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express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
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1.
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Copyright © 2016, Diodes Incorporated
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DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
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