ELM GD25Q16 3.3v uniform sector dual and quad serial flash Datasheet

http://www.elm-tech.com
GD25Q16C
DATASHEET
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
- Content 1. FEATURES
Page
-------------------------------------------------------------------------------------------------
2. GENERAL DESCRIPTION
4
-----------------------------------------------------------------------------
5
--------------------------------------------------------------------------
6
4. DEVICE OPERATION
----------------------------------------------------------------------------------
7
5. DATA PROTECTION
------------------------------------------------------------------------------------
8
6. STATUS REGISTER
-------------------------------------------------------------------------------------
10
3. MEMORY ORGANIZATION
7. COMMANDS DESCRIPTION
-------------------------------------------------------------------------
12
7.1. Write Enable (WREN) (06H)
-----------------------------------------------------------------------
15
7.2. Write Disable (WRDI) (04H)
-----------------------------------------------------------------------
15
7.3. Read Status Register (RDSR) (05H or 35H)
7.4. Write Status Register (WRSR) (01H)
-----------------------------------------------------
16
-------------------------------------------------------------
16
7.5. Write Enable for Volatile Status Register (50H)
7.6. Read Data Bytes (READ) (03H)
--------------------------------------------------
17
--------------------------------------------------------------------
17
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)
-------------------------------------------
18
7.8. Dual Output Fast Read (3BH)
----------------------------------------------------------------------
18
7.9. Quad Output Fast Read (6BH)
----------------------------------------------------------------------
19
7.10. Dual I/O Fast Read (BBH)
-------------------------------------------------------------------------
19
7.11. Quad I/O Fast Read (EBH)
-------------------------------------------------------------------------
21
7.12. Quad I/O Word Fast Read (E7H)
------------------------------------------------------------------
22
7.13. Page Program (PP) (02H)
---------------------------------------------------------------------------
23
7.14. Quad Page Program (32H)
--------------------------------------------------------------------------
24
-----------------------------------------------------------------------------
25
7.15. Sector Erase (SE) (20H)
7.16. 32KB Block Erase (BE) (52H)
---------------------------------------------------------------------
25
7.17. 64KB Block Erase (BE) (D8H)
---------------------------------------------------------------------
26
--------------------------------------------------------------------------
26
---------------------------------------------------------------------
27
7.18. Chip Erase (CE) (60/C7H)
7.19. Deep Power-Down (DP) (B9H)
7.20. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH) 28
7.21. Read Manufacture ID/Device ID (REMS) (90H)
7.22. Read Identification (RDID) (9FH)
-------------------------------------------------
29
------------------------------------------------------------------
29
7.23. High Performance Mode (HPM) (A3H)
-----------------------------------------------------------
7.24. Continuous Read Mode Reset (CRMR) (FFH)
7.25. Read Unique ID (4BH)
30
----------------------------------------------------
31
------------------------------------------------------------------------------
31
7.26. Program/Erase Suspend (PES) (75H)
--------------------------------------------------------------
49 - 2
32
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7.27. Program/Erase Resume (PER) (7AH)
7.28. Erase Security Registers (44H)
--------------------------------------------------------------
32
----------------------------------------------------------------------
33
------------------------------------------------------------------
33
----------------------------------------------------------------------
34
7.29. Program Security Registers (42H)
7.30. Read Security Registers (48H)
7.31. Enable Reset (66H) and Reset (99H)
---------------------------------------------------------------
7.32. Read Serial Flash Discoverable Parameter (5AH)
------------------------------------------------
36
---------------------------------------------------------------
41
-------------------------------------------------------------------------------------
41
----------------------------------------------------------------------------------
41
8. ELECTRICAL CHARACTERISTICS
8.1. Power-ON timing
35
8.2. Initial delivery state
8.3. Data retention and endurance
8.4. Absolute maximum ratings
-----------------------------------------------------------------------
41
-------------------------------------------------------------------------
42
8.5. Capacitance measurement conditions
-------------------------------------------------------------
42
8.6. DC characteristics
-----------------------------------------------------------------------------------
43
8.7. AC characteristics
-----------------------------------------------------------------------------------
43
9. ORDERING INFORMATION
-------------------------------------------------------------------------
46
10. PACKAGE INFORMATION
---------------------------------------------------------------------------
47
10.1. Package SOP8 150MIL
-----------------------------------------------------------------------------
47
10.2. Package SOP8 208MIL
-----------------------------------------------------------------------------
48
------------------------------------------------------------------------
49
10.3. Package WSON8 (6×5MM)
49 - 3
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
1. FEATURES
♦ 16M-bit Serial Flash
♦ Program/Erase Speed
- 2048K-byte
- 256 bytes per programmable page
♦ Standard, Dual, Quad SPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
- Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
♦ High Speed Clock Frequency
- 120MHz for fast read with 30PF load
- Dual I/O Data transfer up to 240Mbits/s
- Quad I/O Data transfer up to 480Mbits/s
♦ Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# pin
- Top or Bottom, Sector or Block selection
♦ Cycling endurance
- Minimum 100,000 Program/Erase Cycles
♦ Data retention
- 20-year data retention typical.
- Page Program time: 0.6ms typical
- Sector Erase time: 45ms typical
- Block Erase time: 0.15/0.25s typical
- Chip Erase time: 7s typical
♦ Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
♦ Low Power Consumption
- 20mA maximum active current
- 5μA maximum power down current
♦ Advanced Security Features(1)
- 64-Bit Unique ID for each device
- 4×256-Byte Security Registers With OTP Locks
- Discoverable parameters(SFDP) register
♦ Single Power Supply Voltage
- Full voltage range: 2.7~3.6V
♦ Package Information
- SOP8 (150mil)
- SOP8 (208mil)
- WSON8 (6×5mm)
Note: (1) Please contact ELM for details.
49 - 4
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
2. GENERAL DESCRIPTION
The GD25Q16C(16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#) and I/O3 (HOLD#).
The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad Output data is transferred
with speed of 480Mbits/s.
Connection Diagram
8-LEAD SOP
8-LEAD WSON
Pin Description
Pin Name
I/O
Description
CS#
SO (IO1)
WP# (IO2)
I
I/O
I/O
Chip Select Input
Data Output (Data Input Output 1)
Write Protect Input (Data Input Output 2)
VSS
SI (IO0)
I/O
Ground
Data Input (Data Input Output 0)
SCLK
I
HOLD# (IO3)
VCC
I/O
Serial Clock Input
Hold Input (Data Input Output 3)
Power Supply
Block Diagram
Write Control
Logic
Status
Register
HOLD#(IO3)
SCLK
CS#
SPI
Command &
Control Logic
High Voltage
Generators
Page Address
Latch/Counter
Write Protect Logic
and Row Decode
WP#(IO2)
Flash
Memory
Column Decode And
256-Byte Page Buffer
SI(IO0)
SO(IO1)
Byte Address
Latch/Counter
49 - 5
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
3. MEMORY ORGANIZATION
GD25Q16C
Each device has
Each block has
Each sector has
Each page has
2M
64/32K
4K
256
bytes
8K
256/128
16
-
pages
512
16/8
-
-
sectors
32/64
-
-
-
blocks
Uniform Block Sector Architecture
GD25Q16C 64K Bytes Block Sector Architecture
Block
Sector
31
511
-----
1FF000H
-----
1FFFFFH
-----
496
495
1F0000H
1EF000H
1F0FFFH
1EFFFFH
30
----480
-----
----1E0000H
-----
----1E0FFFH
-----
-----
-------------
-------------
-------------
-----
--------47
--------02F000H
--------02FFFFH
2
----32
----020000H
----020FFFH
31
01F000H
01FFFFH
----16
----010000H
----010FFFH
15
----0
00F000H
----000000H
00FFFFH
----000FFFH
1
0
Address range
49 - 6
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
4. DEVICE OPERATION
SPI Mode
Standard SPI
The GD25Q16C feature a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#),
Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is
latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI
The GD25Q16C supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast
Read”(3BH and BBH) commands. These commands allow data to be transferred to or from the device at two
times the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional
I/O pins: IO0 and IO1.
Quad SPI
The GD25Q16C supports Quad SPI operation when using the “Quad Output Fast Read”(6BH), “Quad I/O Fast
Read”(EBH), “Quad I/O Word Fast Read”(E7H) and “Quad Page Program” (32H) commands. These commands
allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the
Quad SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins
become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to
be set.
Hold
The HOLD# function is only available when QE=0, If QE=1, The HOLD# function is disabled, the pin acts as
dedicated data I/O pin.
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation
of write status register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK
signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD
condition ends on rising edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD
operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high
during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the
HOLD# must be at high and then CS# must be at low.
Figure 1. Hold Condition
CS#
SCLK
HOLD#
HOLD
HOLD
49 - 7
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
5. DATA PROTECTION
The GD25Q16C provides the following data protection methods:
♦ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL
bit will return to reset by the following situation:
- Power-Up
- Write Disable (WRDI)
- Write Status Register (WRSR)
- Page Program (PP)
- Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)
♦ Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits define the section of the
memory array that can be read but not change.
♦ Hardware Protection Mode: WP# going low to protected the BP0~BP4 bits and SRP0~1 bits.
♦ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from
Deep Power-Down Mode command.
Table1.0 GD25Q16C Protected area size (CMP=0)
Status Register Content
BP4 BP3 BP2 BP1 BP0
×
×
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
0
0
1
0
1
0
1
0
0
1
0
1
0
1
0
0
1
0
1
1
0
1
1
0
0
0
1
1
0
1
×
×
1
1
×
1
0
0
0
1
1
0
0
1
0
1
0
0
1
1
1
0
1
0
×
1
1
0
0
1
1
1
0
1
0
1
1
0
1
1
1
1
1
0
×
Memory Content
Blocks
NONE
31
30 to 31
28 to 31
24 to 31
16 to 31
0
0 to 1
0 to 3
0 to 7
0 to 15
0 to 31
31
31
31
31
0
0
0
0
Addresses
NONE
1F0000H-1FFFFFH
1E0000H-1FFFFFH
1C0000H-1FFFFFH
180000H-1FFFFFH
100000H-1FFFFFH
000000H-00FFFFH
000000H-01FFFFH
000000H-03FFFFH
000000H-07FFFFH
000000H-0FFFFFH
000000H-1FFFFFH
1FF000H-1FFFFFH
1FE000H-1FFFFFH
1FC000H-1FFFFFH
1F8000H-1FFFFFH
000000H-000FFFH
000000H-001FFFH
000000H-003FFFH
000000H-007FFFH
49 - 8
Density
NONE
64KB
128KB
256KB
512KB
1M
64KB
128KB
256KB
512KB
1MB
2MB
4KB
8KB
16KB
32KB
4KB
8KB
16KB
32KB
Portion
NONE
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/32
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
Top Block
Top Block
Top Block
Top Block
Bottom Block
Bottom Block
Bottom Block
Bottom Block
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table1.1. GD25Q16C Protected area size (CMP=1)
Status Register Content
BP4 BP3 BP2 BP1 BP0
×
×
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
0
0
1
0
1
0
1
0
0
1
0
1
0
1
0
0
1
0
1
1
0
1
1
0
0
0
1
1
0
1
×
×
1
1
×
1
0
0
0
1
1
0
0
1
0
1
0
0
1
1
1
0
1
0
×
1
1
0
0
1
1
1
0
1
0
1
1
0
1
1
1
1
1
0
×
Memory Content
Blocks
0 to 31
0 to 30
0 to 29
0 to 27
0 to 23
0 to 15
1 to 31
2 to 31
4 to 31
8 to 31
16 to 31
NONE
0 to 31
0 to 31
0 to 31
0 to 31
0 to 31
0 to 31
0 to 31
0 to 31
Addresses
000000H-1FFFFFH
000000H-1EFFFFH
000000H-1DFFFFH
000000H-1BFFFFH
000000H-17FFFFH
000000H-0FFFFFH
010000H-1FFFFFH
020000H-1FFFFFH
040000H-1FFFFFH
080000H-1FFFFFH
100000H-1FFFFFH
NONE
000000H-1FEFFFH
000000H-1FDFFFH
000000H-1FBFFFH
000000H-1F7FFFH
001000H-1FFFFFH
002000H-1FFFFFH
004000H-1FFFFFH
008000H-1FFFFFH
49 - 9
Density
2M
1984KB
1920KB
1792KB
1536KB
1M
1984KB
1920KB
1792KB
1536KB
1M
NONE
2044KB
2040KB
2032KB
2016KB
2044KB
2040KB
2032KB
2016KB
Portion
ALL
Lower 31/32
Lower 15/16
Lower 7/8
Lower 3/4
Lower 1/2
Upper 31/32
Upper 15/16
Upper 7/8
Upper 3/4
Upper 1/2
NONE
Lower 511/512
Lower 255/256
Lower 127/128
Lower 63/64
Upper 511/512
Upper 255/256
Upper 127/128
Upper 63/64
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
6. STATUS REGISTER
S15
SUS
S14
CMP
S13
HPM
S12
Reserved
S11
Reserved
S10
LB
S9
QE
S8
SRP1
S7
SRP0
S6
BP4
S5
BP3
S4
BP2
S3
BP1
S2
BP0
S1
WEL
S0
WIP
The status and control bits of the Status Register are as follows:
WIP bit.
The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register
progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when
WIP bit sets 0, means the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status
Register, Program or Erase command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits are non-volatile. They define the size of the area to be
software protected against Program and Erase commands. These bits are written with the Write Status Register
(WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1 and BP0) bits are set to 1, the relevant
memory area (as defined in Table1). becomes protected against Page Program (PP), Sector Erase (SE) and Block
Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1 and BP0) bits can be written provided that
the Hardware Protected mode has not been set. The Chip Erase (CE) command is executed, only if the Block
Protect (BP2, BP1 and BP0) bits are 0 and CMP=0.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The
SRP bits control the method of write protection: software protection, hardware protection, power supply lockdown or one time programmable protection.
SRP1 SRP0 #WP
Status Register
0
0
×
Software Protected
0
1
0
Hardware Protected
0
1
1
Hardware Unprotected
1
0
×
Description
The Status Register can be written to after a Write Enable
command, WEL=1.(Default)
WP#=0, the Status Register locked and can not be written to.
WP#=1, the Status Register is unlocked and can be written to
after a Write Enable command, WEL=1.
Power Supply
Status Register is protected and can not be written to again until
the next Power-Down, Power-Up cycle.
Lock-Down(1)(2)
One Time Program(2) Status Register is permanently protected and can not be written to.
1
1
×
NOTE:
(1). When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
(2). This feature is available on special order. (GD25Q16CxxSx)Please contact ELM for details.
49 - 10
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation.
When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1,
the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI
operation if the WP# or HOLD# pins are tied directly to the power supply or ground).
LB bit.
The LB bit is a non-volatile One Time Program (OTP) bit in Status Register (S10) that provide the write protect
control and status to the Security Registers. The default state of LB is 0, the security registers are unlocked. LB
can be set to 1 individually using the Write Register instruction. LB is One Time Programmable, once it’s set to 1,
the Security Registers will become read-only permanently.
CMP bit.
The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction the BP4BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory Protection
table for details. The default setting is CMP=0.
HPF bit.
The High Performance Flag (HPF) bit indicates the status of High Performance Mode (HPM). When HPF bit
sets to 1, it means the device is in High Performance Mode, when HPF bit sets 0 (default), it means the device is
not in High Performance Mode.
SUS bits.
The SUS bit is a read only bit in the status register (S15) that is set to 1 after executing an Erase/Program
Suspend (75H) command. The SUS bit is cleared to 0 by Erase/Program Resume (7AH) command as well as a
power-down, power-up cycle.
49 - 11
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
7. COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit
on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in
to the device, most significant bit first on SI, each bit being latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this
might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last
bit of the command sequence has been shifted in. For the commands of Read, Fast Read, Read Status Register
or Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a
data-out sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out.
For the commands of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write
Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary,
otherwise the command is rejected, and is not executed. That means CS# must be driven high when the number
of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if CS# is driven high
at any time the input byte is not a full byte, nothing will happen and WEL will not be reset.
Table2. Commands (Standard/Dual/Quad SPI)
Command Name
Byte 1
Byte 2
Write Enable
Write Disable
Volatile SR Write Enable
Read Status Register
Read Status Register-1
Write Status Register
Read Data
Fast Read
Dual Output Fast Read
06H
04H
50H
05H
35H
01H
03H
0BH
3BH
(S7-S0)
(S15-S8)
(S7-S0)
A23-A16
A23-A16
A23-A16
Dual I/O Fast Read
BBH
A23-A8 (2)
Quad Output Fast Read
6BH
Quad I/O Fast Read
EBH
A23-A16
A23-A0
M7-M0 (4)
A23-A0
M7-M0 (4)
Quad I/O Word Fast
Read (7)
Continuous Read Mode
Reset
Page Program
Quad Page Program
Sector Erase
Block Erase (32K)
Block Erase (64K)
Chip Erase
Enable Reset
Reset
Program/Erase Suspend
Program/Erase Resume
E7H
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
(continuous)
(continuous)
(S15-S8)
A15-A8
A15-A8
A15-A8
A7-A0
M7-M0 (2)
A15-A8
A7-A0
A7-A0
A7-A0
(D7-D0)
dummy
dummy
(Next byte)
(D7-D0)
D7-D0 (1)
(D7-D0) (1)
A7-A0
(continuous)
(continuous)
(continuous)
(continuous)
dummy
(D7-D0) (3)
(continuous)
dummy (5)
(D7-D0) (3)
(continuous)
dummy (6)
(D7-D0) (3)
(continuous)
A15-A8
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
A7-A0
FFH
02H
32H
20H
52H
D8H
C7/60H
66H
99H
75H
7AH
A23-A16
A23-A16
A23-A16
A23-A16
A23-A16
49 - 12
D7-D0
D7-D0 (3)
Next byte
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Command Name
Deep Power-Down
Release From Deep
Power-Down,
And Read Device ID
Release From Deep
Power-Down
Manufacturer/
Device ID
Read Unique ID
High Performance Mode
Read Serial Flash
Discoverable Parameter
Read Identification
Erase Security
Registers (8)
Program Security
Registers (8)
Read Security
Registers (8)
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
n-Bytes
dummy
dummy
dummy
(DID7DID0)
(continuous)
90H
dummy
dummy
00H
4BH
A3H
dummy
dummy
dummy
dummy
dummy
dummy
(MID7MID0)
dummy
(DID7(continuous)
DID0)
(UID127-D0)
5AH
A23-A16
A15-A8
A7-A0
9FH
(MID7-M0)
(JDID15JDID8)
(JDID7JDID0)
44H
A23-A16
A15-A8
A7-A0
42H
A23-A16
A15-A8
A7-A0
(D7-D0)
(D7-D0)
48H
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
B9H
ABH
ABH
dummy
(D7-D0)
(continuous)
(continuous)
NOTE:
(1) Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
(2) Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8
IO1 = A23, A21, A19, A17, A15, A13, A11, A9
A6, A4, A2, A0, M6, M4, M2, M0
A7, A5, A3, A1, M7, M5, M3, M1
(3) Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
(4) Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
(5) Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
49 - 13
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IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
(6) Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
(7) Fast Word Read Quad I/O Data: the lowest address bit must be 0.
(8) Security Registers Address:
Security Register0: A23-A16=00H, A15-A8=00H, A7-A0=Byte Address;
Security Register1: A23-A16=00H, A15-A8=01H, A7-A0=Byte Address;
Security Register2: A23-A16=00H, A15-A8=02H, A7-A0=Byte Address;
Security Register3: A23-A16=00H, A15-A8=03H, A7-A0=Byte Address.
(9) Address, Continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID
IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0, …)
IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1, …)
IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2, …)
IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3, …)
Table Of ID Definitions:
GD25Q16C
Operation Code
MID7-MID0
ID15-ID8
ID7-ID0
9FH
90H
ABH
C8
C8
40
15
14
14
49 - 14
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http://www.elm-tech.com
7.1. Write Enable (WREN)(06H)
The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch
(WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE),
Write Status Register (WRSR) and Erase/Program Security Register command. The Write Enable (WREN)
command sequence: CS# goes low → sending the Write Enable command → CS# goes high.
Figure 2. Write Enable Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command
SI
06H
High-Z
SO
7.2. Write Disable (WRDI) (04H)
The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command
sequence: CS# goes low → Sending the Write Disable command → CS# goes high. The WEL bit is reset by
following condition: Power-up and upon completion of the Write Status Register, Page Program, Sector Erase,
Block Erase, Chip Erase, Erase/Program Security Register and Reset commands.
Figure 3. Write Disable Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
Command
04H
High-Z
49 - 15
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7.3. Read Status Register (RDSR) (05H or 35H)
The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read
at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles
is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new command to
the device. It is also possible to read the Status Register continuously. For command code “05H”, the SO will
output Status Register bits S7~S0. The command code “35H”, the SO will output Status Register bits S15~S8.
Figure 4. Read Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Command
SI
05H or 35H
SO
High-Z
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
7
S7~S0 or S15~S8 out
6 5 4 3 2 1 0
7
MSB
MSB
7.4. Write Status Register (WRSR) (01H)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it
can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable
(WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S15, S1 and S0 of the Status Register. CS# must
be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register
(WRSR) command is not executed. If CS# is driven high after eighth bit of the data byte, the CMP and QE bit
will be cleared to 0. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration
is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch
(WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in
Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register
Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP) bit
and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status
Register (WRSR) command is not executed once the Hardware Protected Mode is entered.
Figure 5. Write Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
7
6
Command
SI
SO
01H
Status Register in
MSB
5
4
3
2
1
0 15 14 13 12 11 10 9
8
High-Z
49 - 16
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7.5. Write Enable for Volatile Status Register (50H)
The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to
change the system configuration and memory protection schemes quickly without waiting for the typical nonvolatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for
Volatile Status Register command must be issued prior to a Write Status Register command. The Write Enable
for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for the Write Status
Register command to change the volatile Status Register bit values.
Figure 6. Write Enable for Volatile Status Register Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
Command(50H)
SI
SO
High-Z
7.6. Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being
shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read
Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 7. Read Data Bytes Sequence Diagram
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
8
Command
03H
High-Z
9 10
28 29 30 31 32 33 34 35 36 37 38 39
24-bit address
23 22 21
3
2
1
0
MSB
MSB
49 - 17
7
6
5
Data Out1
4 3 2 1
Data Out2
0
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH)
http://www.elm-tech.com
The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by
a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then
the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC,
during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out.
Figure 8. Read Data Bytes at Higher Speed Sequence Diagram
7.8. Dual Output Fast Read (3BH)
The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle
from SI and SO. The command sequence is shown in followed Figure9. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out.
Figure 9. Dual Output Fast Read Sequence Diagram
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7.9. Quad Output Fast Read (6BH)
The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle
from IO3, IO2, IO1 and IO0. The command sequence is shown in followed Figure10. The first byte addressed
can be at any location. The address is automatically incremented to the next higher address after each byte of
data is shifted out.
Figure 10. Quad Output Fast Read Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
9 10
Command
SI(IO0)
24-bit address
6BH
High-Z
WP#(IO2)
High-Z
HOLD#(IO3)
High-Z
SCLK
3
23 22 21
SO(IO1)
CS#
28 29 30 31
2
1
0
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Dummy Clocks
SI(IO0)
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7 3 7 3 7 3 7 3 7
Byte1 Byte2 Byte3 Byte4
7.10. Dual I/O Fast Read (BBH)
The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability
to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, each bit
being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle
from SI and SO. The command sequence is shown in followed Figure11. The first byte addressed can be at any
location. The address is automatically incremented to the next higher address after each byte of data is shifted
out.
Dual I/O Fast Read with “Continuous Read Mode”
The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0)
=AXH, then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the
BBH command code. The command sequence is shown in followed Figure12. If the “Continuous Read Mode”
bits (M7-0) are any value other than AXH, the next command requires the first BBH command code, thus
returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0)
before issuing normal command.
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Figure 11. Dual I/O Fast Read Sequence Diagram (M7-0 = 0XH or not AXH)
Figure 11. Dual I/O Fast Read Sequence Diagram (M5-4� (1, 0))
Figure
12. Dual I/O Fast Read Sequence Diagram (M7-0 = AXH)
Figure 12. Dual I/O Fast Read Sequence Diagram (M5-4= (1, 0))
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7.11. Quad I/O Fast Read (EBH)
The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to
input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock
by IO0, IO1, IO2, IO3, each bit being latched in during the rising edge of SCLK, then the memory contents
are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The command sequence is shown in followed
Figure13. The first byte addressed can be at any location. The address is automatically incremented to the next
higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must
be set to enable for the Quad I/O Fast read command.
Quad I/O Fast Read with “Continuous Read Mode”
The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0)
=AXH, then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the
EBH command code. The command sequence is shown in followed Figure14. If the “Continuous Read Mode”
bits (M7-0) are any value other than AXH, the next command requires the first EBH command code, thus
returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0) before
issuing normal command.
Figure 13. Quad I/O Fast Read Sequence Diagram (M7-0 = 0XH or not AXH)
CS#
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
0
SCLK
1
2
3
4
5
6
7
Command
SI(IO0)
EBH
A23-16 A15-8 A7-0
M7-0
Dummy
Byte1 Byte2
Figure 14. Quad I/O Fast Read Sequence Diagram (M7-0 = AXH)
CS#
8
9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0
49 - 21
Dummy
Byte1 Byte2
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7.12. Quad I/O Word Fast Read (E7H)
The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest
address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in followed Figure15.
The first byte addressed can be at any location. The address is automatically incremented to the next higher
address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to
enable for the Quad I/O Word Fast read command.
Quad I/O Word Fast Read with “Continuous Read Mode”
The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M7-0)
=AXH, then the next Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not
require the E7H command code. The command sequence is shown in followed Figure16. If the “Continuous
Read Mode” bits (M7-0) are any value other than AXH, the next command requires the first E7H command
code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used to reset (M7-0)
before issuing normal command.
Figure 15. Quad I/O Word Fast Read Sequence Diagram (M7-0 = 0XH or not AXH)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
Command
SI(IO0)
E7H
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
Figure 16. Quad I/O Word Fast Read Sequence Diagram (M7-0 = AXH)
CS#
8
9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Byte3
49 - 22
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7.13. Page Program (PP) (02H)
The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program
command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three
address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero,
all transmitted data that goes beyond the end of the current page are programmed from the start address of the
same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the
entire duration of the sequence.
The Page Program command sequence: CS# goes low → sending Page Program command → 3-byte address
on SI → at least 1 byte data on SI → CS# goes high. The command sequence is shown in Figure17. If more
than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are
guaranteed to be programmed correctly within the same page. If less than 256 data bytes are sent to device, they
are correctly programmed at the requested addresses without having any effects on the other bytes of the same
page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Page
Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the
Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress
(WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2,
BP1 and BP0) is not executed.
Figure 17. Page Program Sequence Diagram
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7.14. Quad Page Program (32H)
The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2 and IO3.
To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the
Page Program command. The quad Page Program command is entered by driving CS# Low, followed by the
command code (32H), three address bytes and at least one data byte on IO pins.
The command sequence is shown in Figure18. If more than 256 bytes are sent to the device, previously latched
data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page.
If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without
having any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last
data byte has been latched in; otherwise the Quad Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated.
While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset.
A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2,
BP1 and BP0) is not executed.
Figure 18. Quad Page Program Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
24-bit address
Command
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
537
539
540
541
542
543
Byte1 Byte2
0 4
538
SI(IO0)
28 29 30 31 32 33 34 35 36 37 38 39
9 10
23 22 21
32H
2
3
1
MSB
SO(IO1)
SCLK
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Byte11 Byte12
536
CS#
Byte256
Byte253
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
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7.15. Sector Erase (SE) (20H)
The Sector Erase (SE) command is used to erase all the data of the chosen sector. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE)
command is entered by driving CS# low, followed by the command code, and 3-address byte on SI. Any address
inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire
duration of the sequence.
The Sector Erase command sequence: CS# goes low → sending Sector Erase command → 3-byte address on
SI → CS# goes high. The command sequence is shown in Figure19. CS# must be driven high after the eighth bit
of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon
as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector
Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase
(SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1 and BP0) bit (see
Table1 & Table1.1.) is not executed.
Figure 19. Sector Erase Sequence Diagram
CS#
SCLK
0
1
SI
2
3
4
5
6
7
8
29 30 31
24 Bits Address
Command
20H
9
23 22
MSB
2
1
0
7.16. 32KB Block Erase (BE) (52H)
The 32KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase
(BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI.
Any address inside the block is a valid address for the 32KB Block Erase (BE) command. CS# must be driven
low for the entire duration of the sequence.
The 32KB Block Erase command sequence: CS# goes low → sending 32KB Block Erase command → 3-byte
address on SI→ CS# goes high. The command sequence is shown in Figure20. CS# must be driven high after
the eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not
executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated.
While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when
it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is
reset. A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits (see Table1. & Table1.1.) is not executed.
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Figure 20. 32KB Block Erase Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
8
29 30 31
24 Bits Address
Command
SI
9
23 22
MSB
52H
2
1
0
7.17. 64KB Block Erase (BE) (D8H)
The 64KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase
(BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI.
Any address inside the block is a valid address for the 64KB Block Erase (BE) command. CS# must be driven
low for the entire duration of the sequence.
The 64KB Block Erase command sequence: CS# goes low → sending 64KB Block Erase command → 3-byte
address on SI → CS# goes high. The command sequence is shown in Figure21. CS# must be driven high after
the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not
executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated.
While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when
it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is
reset. A 64KB Block Erase (BE) command applied to a block which is protected by the Block Protect (BP4,
BP3, BP2, BP1 and BP0) bits (see Table1. & Table1.1.) is not executed.
Figure 21. 64KB Block Erase Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
8
29 30 31
24 Bits Address
Command
D8H
9
23 22
MSB
2
1
0
7.18. Chip Erase (CE) (60/C7H)
The Chip Erase (CE) command is used to erase all the data of the chip. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The Chip Erase (CE) command is
entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low
for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low → sending Chip Erase command → CS# goes high. The
command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the command code
has been latched in; otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the selftimed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status
Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
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is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed only if all
Block Protect (BP2, BP1 and BP0) bits are 0. The Chip Erase (CE) command is ignored if one or more sectors
are protected.
Figure 22. Chip Erase Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
7
Command
SI
60H or C7H
7.19. Deep Power-Down (DP) (B9H)
Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption
mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while
the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands.
Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle
currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode
can only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep
Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device
ID (RDI) command. This releases the device from this mode. The Release from Deep Power-Down and Read
Device ID (RDI) command also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in
the Standby Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the
command code on SI. CS# must be driven low for the entire duration of the sequence.
The Deep Power-Down command sequence: CS# goes low → sending Deep Power-Down command → CS#
goes high. The command sequence is shown in Figure23. CS# must be driven high after the eighth bit of the
command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon
as CS# is driven high, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep PowerDown Mode is entered. Any Deep Power-Down (DP) command, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 23. Deep Power-Down Sequence Diagram
CS#
SCLK
SI
tDP
0 1 2 3 4 5 6 7
Command
Stand-by mode Deep Power-down mode
B9H
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7.20. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH)
The Release from Power-Down or High Performance Mode/Device ID command is a multi-purpose command.
It can be used to release the device from the Power-Down state or High Performance Mode or obtain the devices
electronic identification (ID) number.
To release the device from the Power-Down state or High Performance Mode, the command is issued by driving
the CS# pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure24. Release from
Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by
driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID
bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure25.
The Device ID value is listed in Manufacturer and Device Identification table. The Device ID can be read
continuously. The command is completed by driving CS# high.
When used to release the device from the Power-Down state and obtain the Device ID, the command is the
same as previously described, and shown in Figure25, except that after CS# is driven high it must remain high
for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal
operation and other command will be accepted. If the Release from Power-Down/Device ID command is issued
while an Erase, Program or Write cycle is in process (when WIP equal 1) the command is ignored and will not
have any effects on the current cycle.
Figure 24. Release Power-Down Sequence or High Performance Mode Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
t RES1
Command
ABH
Deep Power-down mode
Stand-by mode
Figure 25. Release Power-Down and Read Device ID Sequence Diagram
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7.21. Read Manufacture ID/Device ID (REMS) (90H)
http://www.elm-tech.com
The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down/Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a
24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on
the falling edge of SCLK with most significant bit (MSB) first as shown in Figure26. If the 24-bit address is
initially set to 000001H, the Device ID will be read first.
Figure 26. Read Manufacture ID/Device ID Sequence Diagram
7.22. Read Identification (RDID) (9FH)
The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by
two bytes of device identification. The device identification indicates the memory type in the first byte, and the
memory capacity of the device in the second byte. The Read Identification (RDID) command while an Erase
or Program cycle is in progress is not decoded, and has no effect on the cycle that is in progress. The Read
Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is shifted
in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data
Output, each bit being shifted out during the falling edge of Serial Clock. The command sequence is shown in
Figure27. The Read Identification (RDID) command is terminated by driving CS# to high at any time during
data output. When CS# is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute commands.
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Figure 27. Read Identification ID Sequence Diagram
7.23. High Performance Mode (HPM) (A3H)
The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when
operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows precharging of internal charge pumps so the voltages required for accessing the flash memory array are readily
available. The command sequence: CS# goes low → Sending A3H command → Sending 3-dummy byte →
CS# goes high. See Figure28. After the HPM command is executed, the device will maintain a slightly higher
standby current (Icc8) than standard SPI operation. The Release from Power-Down or HPM command (ABH)
can be used to return to standard SPI standby current (Icc1). In addition, Power-Down command (B9H) will
also release the device from HPM mode back to standard SPI standby state.
Figure 28. High Performance Mode Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
Command
A3H
6
7
8
9
29 30 31
t HPM
3 Dummy Bytes
23 22
MSB
2
1
0
SO
High Performance Mode
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7.24. Continuous Read Mode Reset (CRMR) (FFH)
The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to further
reduce command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read operations do not
require the BBH/EBH/E7H command code.
Because the GD25Q16C has no hardware reset pin, so if Continuous Read Mode bits are set to “AXH”, the
GD25Q16C will not recognize any standard SPI commands. So Continuous Read Mode Reset command will
release the Continuous Read Mode from the “AXH” state and allow standard SPI command to be recognized.
The command sequence is show in Figure29.
Figure 29. Continuous Read Mode Reset Sequence Diagram
Mode Bit Reset for Quad/Dual I/O
CS#
0
1
2
3
4
5
6
7
SCLK
SI(IO0)
FFH
SO(IO1)
Don`t Care
WP#(IO2)
Don`t Care
HOLD#(IO3)
Don`t Care
7.25. Read Unique ID (4BH)
The Read Unique ID command accesses a factory-set read-only. 128bit number that is unique to each
GD25Q16C device. The Unique ID can be used in conjunction with user software methods to help prevent
copying or cloning of a system. The Read Unique ID command sequence: CS# goes low → sending Read
Unique ID command → Dummy Byte1 → Dummy Byte2 → Dummy Byte3 → Dummy Byte4 → 128bit
Unique ID Out → CS# goes high. The command sequence is show below.
Figure 30. Read Unique ID Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
9
36 37
38 39
40
164 165 166
4byte Dummy
Command(4BH)
SI
SO
128bit Unique ID
High-Z
127
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7.26. Program/Erase Suspend (PES) (75H)
The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block
erase operation and then read data from any other sector or block. The Write Status Register command (01H)
and Erase/Program Security Registers command (44H, 42H) and Erase commands (20H, 52H, D8H, C7H,
60H) and Page Program command (02H/32H) are not allowed during Program/Erase suspend. Program/Erase
Suspend is valid only during the page program or sector/block erase operation. A maximum of time of “tsus” (See
AC Characteristics) is required to suspend the program/erase operation.
The Program/Erase Suspend command will be accepted by the device only if the SUS bit in the Status Register
equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If
the SUS bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit
will be cleared from 1 to 0 within “tsus” and the SUS bit will be set from 0 to 1 immediately after Program/
Erase Suspend. A power-off during the suspend period will reset the device and release the suspend state. The
command sequence is show in Figure31.
Figure 31. Program/Erase Suspend Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
tSUS
7
Command
SI
75H
High-Z
SO
Accept read command
7.27. Program/Erase Resume (PER) (7AH)
The Program/Erase Resume command must be written to resume the program or sector/block erase operation
after a Program/Erase Suspend command. The Program/Erase command will be accepted by the device only if
the SUS bit equal to 1 and the WIP bit equal to 0. After issued the SUS bit in the status register will be cleared
from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete
the erase operation or the page will complete the program operation. The Program/Erase Resume command will
be ignored unless a Program/Erase Suspend is active. The command sequence is show in Figure32.
Figure 32. Program/Erase Resume Sequence Diagram
CS#
SCLK
SI
0
1
2
3
4
5
6
7
Command
7AH
SO
Resume Erase/Program
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7.28. Erase Security Registers (44H)
The GD25Q16C provides four 256-byte Security Registers which can be erased and programmed individually.
These registers may be used by the system manufacturers to store security and other important information
separately from the main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low → sending Erase Security Registers command
→ CS# goes high. The command sequence is shown in Figure33. CS# must be driven high after the eighth bit
of the command code has been latched in; otherwise the Erase Security Registers command is not executed.
As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated.
While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the
Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset. The Security Registers Lock Bit (LB) in the Status Register can be used to OTP protect
the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase
Security Registers command will be ignored.
Address
A23-A16
A15-A10
A9-A0
Security Register
00000000
000000
Don't Care
Figure 33. Erase Security Registers command Sequence Diagram
CS#
SCLK
0
1
2
3
4
5
6
7
8
44H
29 30 31
24 Bits Address
Command
SI
9
23 22
MSB
2
1
0
7.29. Program Security Registers (42H)
The Program Security Registers command is similar to the Page Program command. It allows from 1 to 256
bytes Security Registers data to be programmed. A Write Enable (WREN) command must previously have been
executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The
Program Security Registers command is entered by driving CS# Low, followed by the command code (42H),
three address bytes and at least one data byte on SI. As soon as CS# is driven high, the self-timed Program
Security Registers cycle (whose duration is tPP) is initiated. While the Program Security Registers cycle is in
progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in
Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
If the Security Registers Lock Bit (LB) is set to 1, the Security Registers will be permanently locked. Program
Security Registers command will be ignored.
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Address
A23-A16
A15-A8
A7-A0
Security Register #0
00H
00H
Byte Address
Security Register #1
00H
01H
Byte Address
Security Register #2
00H
02H
Byte Address
Security Register #3
00H
03H
Byte Address
Figure 34. Program Security Registers command Sequence Diagram
CS#
5
6
8
7
24-bit address
42H
23 22 21
3
2
Data Byte 1
0 7
1
MSB
6
5
4
3
2
1
2078
Command
SI
28 29 30 31 32 33 34 35 36 37 38 39
9 10
2079
4
2076
3
2077
2
2075
1
2074
0
SCLK
1
0
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2073
CS#
2072
MSB
7
6
SCLK
SI
Data Byte 3
Data Byte 2
7
6
5
4
3
2
MSB
1
0 7
6
5
4
3
2
MSB
Data Byte 256
1
0
5
4
3
2
MSB
7.30. Read Security Registers (48H)
The Read Security Registers command is similar to Fast Read command. The command is followed by a
3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then
the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC,
during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out. Once the A9-A0 address reaches the
last byte of the register (Byte 3FFH), it will reset to 000H, the command is completed by driving CS# high.
Address
A23-A16
A15-A10
A9-A0
Security Register
00000000
000000
Address
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Figure 35. Read Security Registers command Sequence Diagram
CS#
0
SCLK
1
2
3
4
5
6
8
7
28 29 30 31
24-bit address
Command
SI
9 10
48H
23 22 21
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
Dummy Byte
7
6
5
4
SO
3
2
1
0
7 6
MSB
Data Out1
5 4 3 2
1
0
Data Out2
7 6 5
MSB
7.31. Enable Reset (66H) and Reset (99H)
If the Reset command is accepted, any on-going internal operation will be terminated and the device will return
to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write
Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Continuous Read
Mode bit setting (M7-M0) and Wrap Bit Setting (W6-W4).
The “Reset (99H)” command sequence as follow: CS# goes low → Sending Enable Reset command → CS#
goes high → CS# goes low → Sending Reset command → CS# goes high. Once the Reset command is accepted
by the device, the device will take approximately tRST=60µs to reset. During this period, no command will be
accepted. Data corruption may happen if there is an on-going or suspended internal Erase or Program operation
when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and the
SUS bit in Status Register before issuing the Reset command sequence.
Figure
36.38.
Enable
commandSequence
Sequence
Diagram
Figure
EnableReset
Resetand
and Reset
Reset command
Diagram
7.34.
Read Serial Flash Discoverable Parameter (5AH)
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7.32. Read Serial Flash Discoverable Parameter (5AH)
http://www.elm-tech.com
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the
functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These
parameter tables can be interrogated by host system software to enable adjustments needed to accommodate
divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC
Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216.
FigureFigure
37. Read
Serial Flash Discoverable Parameter command Sequence Diagram
39. Read Serial Flash Discoverable Parameter command Sequence Diagram
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Table3. Signature and Parameter Identification Data Values
Description
Comment
53H
46H
44H
50H
00H
01H
01H
53H
46H
44H
50H
00H
01H
01H
07H
31:24
FFH
FFH
08H
07:00
00H
00H
Start from 0×00H
09H
15:08
00H
00H
Start from 0×01H
0AH
23:16
01H
01H
How many DWORDs
in the Parameter Table
0BH
31:24
09H
09H
0CH
0DH
0EH
07:00
15:08
23:16
30H
00H
00H
30H
00H
00H
0FH
31:24
FFH
FFH
10H
07:00
C8H
C8H
Start from 0×00H
11H
15:08
00H
00H
Start from 0×01H
12H
23:16
01H
01H
How many DWORDs in the
Parameter Table
13H
31:24
03H
03H
14H
15H
16H
07:00
15:08
23:16
60H
00H
00H
60H
00H
00H
17H
31:24
FFH
FFH
SFDF Minor Revision Number
SFDF Major Revision Number
Number of Parameters Headers
Start from 00H
Start from 01H
Start from 00H
Contains 0×FFH and
can never be changed
00H: It indicates a JEDEC
specified header
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
Unused
ID Number
(ELM Manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Data
07:00
15:08
23:16
31:24
07:00
15:08
23:16
Fixed:50444653H
ID number (JEDEC)
Data
00H
01H
02H
03H
04H
05H
06H
SFDP Signature
Unused
Add(H) DW Add
(Byte)
(Bit)
Fist address of JEDEC Flash
Parameter Table
Contains 0×FFH and
can never be changed
It is indicates ELM
manufacturer ID
Parameter Table Pointer (PTP)
Fist address of ELM Flash
Parameter Table
Unused
Contains 0×FFH and
can never be changed
49 - 37
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table4. Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
00: Reserved;
01: 4KB erase;
Block/Sector Erase Size
10: Reserved;
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
0: Nonvolatile status bit
Write Enable Instruction
Requested for Writing to Volatile 1: Volatile status bit
(BP status register bit)
Status Registers
Add(H) DW Add
(Byte)
(Bit)
30H
0: Use 50H Opcode,
Write Enable Opcode Select for 1: Use 06H Opcode,
Writing to Volatile Status
Note: If target flash status
Registers
register is Nonvolatile, then bits
3 and 4 must be set to 00b.
Unused
4KB Erase Opcode
(1-1-2) Fast Read
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
clocking
(1-2-2) Fast Read
(1-4-4) Fast Read
(1-1-4) Fast Read
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of
Wait states
(1-4-4) Fast Read Number of
Mode Bits
(1-4-4) Fast Read Opcode
(1-1-4) Fast Read Number of
Wait states
(1-1-4) Fast Read Number of
Mode Bits
(1-1-4) Fast Read Opcode
(1-1-2) Fast Read Number of
Wait states
(1-1-2) Fast Read Number of
Mode Bits
(1-1-2) Fast Read Opcode
Contains 111b and can never be
changed
0=Not support, 1=Support
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
0=Not support, 1=Support
0=Not support, 1=Support
0=Not support, 1=Support
0=Not support, 1=Support
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
31H
32H
33H
37H:34H
38H
39H
3AH
3BH
3CH
3DH
49 - 38
Data
01:00
01b
02
1b
03
0b
04
0b
07:05
111b
15:08
16
20H
1b
18:17
00b
19
0b
20
21
22
23
31:24
31:00
Data
E5H
20H
F1H
1b
1b
1b
1b
FFH
FFH
00FFFFFFH
04:00
00100b
07:05
010b
15:08
EBH
20:16
01000b
23:21
000b
31:24
6BH
04:00
01000b
07:05
000b
15:08
3BH
44H
EBH
08H
6BH
08H
3BH
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Description
(1-2-2) Fast Read Number of
Wait states
(1-2-2) Fast Read Number
of Mode Bits
(1-2-2) Fast Read Opcode
(2-2-2) Fast Read
Unused
(4-4-4) Fast Read
Unused
Unused
Unused
(2-2-2) Fast Read Number of
Wait states
(2-2-2) Fast Read Number of
Mode Bits
(2-2-2) Fast Read Opcode
Unused
(4-4-4) Fast Read Number of
Wait states
(4-4-4) Fast Read Number of
Mode Bits
(4-4-4) Fast Read Opcode
Sector Type 1 Size
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector Type 4 erase Opcode
Comment
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
0=not support; 1=support
0=not support; 1=support
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
00000b: Wait states (Dummy
Clocks) not support
000b: Mode Bits not support
Sector/block size=2^N bytes
0×00b: this sector type don’t exist
Sector/block size=2^N bytes
0×00b: this sector type don’t exist
Sector/block size=2^N bytes
0×00b: this sector type don’t exist
Sector/block size=2^N bytes
0×00b: this sector type don’t exist
49 - 39
Add(H) DW Add
(Byte)
(Bit)
Data
Data
20:16
00010b
23:21
010b
31:24
00
03:01
04
07:05
31:08
15:00
BBH
0b
111b
0b
111b
0×FFH
0×FFH
20:16
00000b
23:21
000b
31:24
15:00
FFH
0×FFH
20:16
00000b
23:21
000b
4BH
31:24
FFH
FFH
4CH
07:00
0CH
0CH
4DH
15:08
20H
20H
4EH
23:16
0FH
0FH
4FH
31:24
52H
52H
50H
07:00
10H
10H
51H
15:08
D8H
D8H
52H
23:16
00H
00H
53H
31:24
FFH
FFH
3EH
3FH
40H
43H:41H
45H:44H
46H
47H
49H:48H
4AH
42H
BBH
EEH
0×FFH
0×FFH
00H
FFH
0×FFH
00H
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Table5. Parameter Table (1): ELM Flash Parameter Tables
Description
Vcc Supply Maximum Voltage
Vcc Supply Minimum Voltage
HW Reset# pin
HW Hold# pin
Deep Power Down Mode
SW Reset
SW Reset Opcode
Program Suspend/Resume
Erase Suspend/Resume
Unused
Wrap-Around Read mode
Wrap-Around Read mode
Opcode
Comment
2000H=2.000V
2700H=2.700V
3600H=3.600V
1650H=1.650V
2250H=2.250V
2300H=2.300V
2700H=2.700V
0=not support; 1=support
0=not support; 1=support
0=not support; 1=support
0=not support; 1=support
Should be issue Reset
Enable(66H) before Reset cmd.
0=not support; 1=support
0=not support; 1=support
Add(H)
(Byte)
DW Add
(Bit)
Data
Data
61H:60H
15:00
3600H
3600H
63H:62H
31:16
2700H
2700H
00
01
02
03
0b
1b
1b
1b
11:04
99H
12
13
14
15
1b
1b
1b
0b
66H
23:16
FFH
FFH
67H
31:24
64H
64H
00
0b
01
0b
09:02
FFH
10
0b
EBFCH
11
12
13
15:14
31:16
1b
0b
1b
11b
FFFFH
FFFFH
65H:64H
0=not support; 1=support
08H: support 8B wrap-around
read
Wrap-Around Read data length 16H: 8B & 16B
32H: 8B & 16B & 32B
64H: 8B & 16B & 32B & 64B
Individual block lock
0=not support; 1=support
Individual block lock bit
0=Volatile; 1=Nonvolatile
(Volatile/Nonvolatile)
Individual block lock Opcode
Individual block lock Volatile
0=protect; 1=unprotect
protect bit default protect status
Secured OTP
0=not support; 1=support
Read Lock
0=not support; 1=support
Permanent Lock
0=not support; 1=support
Unused
Unused
49 - 40
6BH:68H
799EH
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8. ELECTRICAL CHARACTERISTICS
8.1. Power-On Timing
Figure 38. Power-on Timing Sequence Diagram
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
tVSL
VCC(min) To CS# Low
10
tPUW
VWI
Time Delay Before Write Instruction
Write Inhibit Voltage
1
2.1
Typ
Max
Unit
us
2.3
10
2.5
ms
V
8.2. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status
Register contains 00H (all Status Register bits are 0).
8.3. Data Retention And Endurance
Parameter
Minimum Pattern Data Retention Time
Erase/Program Endurance
49 - 41
Test Condition
Min
Unit
150°C
125°C
-40 to 85°C
10
20
100K
Years
Years
Cycles
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8.4. Absolute Maximum Ratings
Parameter
Ambient Operating Temperature
Storage Temperature
Value
Unit
-40 to 85
°C
-65 to 150
°C
200
mA
V
Output Short Circuit Current
Applied Input/Output Voltage
Transient Input/Output Voltage
-0.6 to VCC+4.0
-2.0 to VCC+2.0
VCC
-0.6 to VCC+4.0
V
V
Figure 39. Maximum Negative/positive Overshoot Diagram
Maximum Negative Overshoot Waveform
20ns
Maximum Positive Overshoot Waveform
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
8.5. Capacitance Measurement Conditions
Symbol
CIN
COUT
CL
Parameter
Min
Typ
Max
Unit
Conditions
6
8
pF
pF
VIN=0V
VOUT=0V
5
0.1VCC to 0.8VCC
pF
ns
V
0.2VCC to 0.7VCC
0.5VCC
V
V
Input Capacitance
Output Capacitance
Load Capacitance
Input Rise And Fall time
Input Pulse Voltage
Input Timing Reference Voltage
30
Output Timing Reference Voltage
Figure 40. Input Test Waveform and Measurement Level Diagram
0.8VCC
0.1VCC
Input timing reference level
0.7VCC
0.2VCC
Output timing reference level
AC Measurement Level
0.5VCC
Note: Input pulse rise and fall time are <5ns
49 - 42
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
8.6. DC Characteristics
Symbol
(T= -40°C~85°C, VCC=2.7~3.6V)
Max.
Unit.
Input Leakage Current
±2
μA
ILO
ICC1
Output Leakage Current
Standby Current
CS#=VCC, VIN=VCC or VSS
1
±2
5
μA
μA
ICC2
Deep Power-Down Current
CS#=VCC, VIN=VCC or VSS
1
5
μA
CLK=0.1VCC/0.9VCC at 120MHz,
Q=Open(*1,*2,*4 I/O)
15
20
mA
CLK=0.1VCC/0.9VCC at 80MHz,
Q=Open(*1,*2,*4 I/O)
13
18
mA
ILI
ICC3
Parameter
Operating Current (Read)
Test Condition
Min.
Typ.
ICC4
Operating Current (PP)
CS#=VCC
20
mA
ICC5
ICC6
Operating Current (WRSR) CS#=VCC
Operating Current (SE)
CS#=VCC
20
20
mA
mA
ICC7
Operating Current (BE)
CS#=VCC
20
mA
ICC8
ICC9
Operating Current (CE)
High Performance Current
CS#=VCC
20
800
mA
μA
VIL
VIH
Input Low Voltage
Input High Voltage
0.2VCC
V
V
VOL
Output Low Voltage
IOL=100μA
0.2
V
VOH
Output High Voltage
IOH=-100μA
400
0.7VCC
VCC-0.2
8.7. AC Characteristics
Symbol
fC
fC1
fC2
fR
tCLH
tCLL
V
(T= -40°C~85°C, VCC=2.7~3.6V, CL=30pf)
Parameter
Min.
Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH),
Quad Output(6BH) (Dual I/O & Quad I/O Without High
Performance Mode), on 3.0V-3.6V power supply
Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH),
Quad Output(6BH) (Dual I/O & Quad I/O Without High
Performance Mode), on 2.7V-3.0V power supply
Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH),
Quad Output(6BH) (Dual I/O & Quad I/O With High
Performance Mode), on 2.7V-3.6V power supply
Serial Clock Frequency For: Read (03H)
Serial Clock High Time
Serial Clock Low Time
Typ.
Max.
Unit.
DC.
104
MHz
DC.
80
MHz
DC.
120
MHz
DC.
80
MHz
4
4
ns
ns
tCLCH Serial Clock Rise Time (Slew Rate)
0.2
V/ns
tCHCL Serial Clock Fall Time (Slew Rate)
tSLCH CS# Active Setup Time
0.2
5
V/ns
ns
5
ns
tCHSH CS# Active Hold Time
49 - 43
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Symbol
Parameter
Min.
Typ.
Max.
Unit.
tSHCH CS# Not Active Setup Time
5
ns
tCHSL CS# Not Active Hold Time
5
ns
tSHSL CS# High Time (Read/Write)
20
ns
tSHQZ Output Disable Time
tCLQX Output Hold Time
6
1.2
ns
ns
tDVCH Data In Setup Time
2
ns
tCHDX Data In Hold Time
tHLCH Hold# Low Setup Time (Relative to Clock)
2
5
ns
ns
tHHCH Hold# High Setup Time (Relative to Clock)
5
ns
tCHHL Hold# High Hold Time (Relative to Clock)
tCHHH Hold# Low Hold Time (Relative to Clock)
tHLQZ Hold# Low To High-Z Output
5
5
6
ns
ns
ns
tHHQX Hold# High To Low-Z Output
6
ns
tCLQV Clock Low To Output Valid
tWHSL Write Protect Setup Time Before CS# Low
7
ns
ns
20
tSHWL Write Protect Hold Time After CS# High
tDP CS# High To Deep Power-Down Mode
100
20
ns
μs
tRES1 CS# High To Standby Mode Without Electronic Signature Read
tRES2 CS# High To Standby Mode With Electronic Signature Read
tSUS CS# High To Next Command After Suspend
20
20
20
μs
μs
μs
tRST
tW
tBP1
CS# High To Next Command After Reset
Write Status Register Cycle Time
Byte Program Time (First Byte)
5
30
20
30
50
μs
ms
μs
tBP2
tPP
Additional Byte Program Time (After First Byte)
Page Programming Time
2.5
0.6
12
2.4
μs
ms
tSE
Sector Erase Time (4K Bytes)
45
150/300(1)
ms
tBE1
tBE2
tCE
Block Erase Time (32K Bytes)
Block Erase Time (64K Bytes)
Chip Erase Time (GD25Q16C)
0.15
0.25
7
0.3/0.7(2)
0.5/0.8(3)
20
s
s
s
Note:
(1). Max Value 4KB tSE with<50K cycles is 150ms and >50K & <100k cycles is 300ms.
(2). Max Value 32KB tBE with<50K cycles is 0.3s and >50K & <100k cycles is 0.7s.
(3). Max Value 64KB tBE with<50K cycles is 0.5s and >50K & <100k cycles is 0.8s.
49 - 44
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Figure41. Serial Input Timing Diagram
tSHSL
CS#
tCHSL
SCLK
tSLCH
tDVCH
tCHSH
MSB
SO
High-Z
tCHCL
tCLCH
tCHDX
SI
tSHCH
LSB
Figure42. Output Timing Diagram
CS#
tCLH
SCLK
tCLQV
tCLQX
tCLQV
tSHQZ
tCLL
tCLQX
LSB
SO
SI
Least significant address bit (LIB) in
Figure43. Hold Timing Diagram
CS#
SCLK
SO
tCHHL
tHLCH
tCHHH
tHLQZ
tHHCH
tHHQX
HOLD#
SI do not care during HOLD operation.
49 - 45
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
9. ORDERING INFORMATION
GD 25 Q 16 C x I G x
Packing Type
Y: Tray
R: Tape & Reel
Green Code
G: Pb Free & Halogen Free Green Package
Temperature Range
I: Industrial(-40°C to +85°C)
Package Type
T: SOP8 150mil
S: SOP8 208mil
W: WSON8 (6×5mm)
Generation
C: Version
Density
16: 16Mb
Series
Q: 3V, 4KB Uniform Sector
Product Family
25: SPI Interface Flash
49 - 46
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10. PACKAGE INFORMATION
10.1. Package SOP8 150MIL
8
�
5
E1
E
L
1
4
L1
C
D
A2
A1
b
e
A
Seating plane
0.10
Dimensions
Symbol
Unit
A
A1
A2
b
1.35
-
0.05
-
1.35 0.31
-
c
D
0.15
-
4.77
4.90
E
E1
e
L
L1
θ
ɑ
ß
mm
Min
Nom
1.27
0.40
-
0.85
1.06
0°
-
6°
7°
11°
12°
Inch
Max 1.75 0.25 1.55 0.51 0.25 5.03 6.20 4.00
0.90 1.27
Min 0.053 0.002 0.053 0.012 0.006 0.188 0.228 0.149 - 0.016 0.033
Nom
- 0.016 - 0.193 0.236 0.154 0.050 0 0.042
8°
0°
-
8°
6°
7°
13°
11°
12°
8°
8°
13°
5.80 3.80
6.00 3.90
Max 0.069 0.010 0.061 0.020 0.010 0.198 0.244 0.158
Note: Both package length and width do not include mold flash.
49 - 47
-
0.035 0.050
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10.2. Package SOP8 208MIL
8
�
5
E1
E
L
1
L1
4
C
D
A2
Dimensions
Symbol
Unit
A1
b
e
A
A
A1
A2
b
c
D
E
E1
e
L
L1
θ
Min
mm Nom
-
0.05
0.15
1.70
1.80
0.31
0.41
0.18
0.21
5.13
5.23
7.70
7.90
5.18
5.28
1.27BSC
0.50
0.67
1.21
1.31
0°
5°
Max
Min
Inch Nom
2.16
-
0.25
0.002
0.006
1.91 0.51
0.067 0.012
0.071 0.016
8.10
5.38
0.85
0.303 0.204
0.020
0.311 0.208 0.050BSC 0.026
1.41
0.048
0.052
8°
0°
5°
0.056
8°
0.25 5.33
0.007 0.202
0.008 0.206
Max 0.085 0.010 0.075 0.020 0.010 0.210 0.319 0.212
Note: Both package length and width do not include mold flash.
49 - 48
-
0.033
Rev.1.0
GD25Q16CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
10.3. Package WSON8 (6×5mm)
D
A2
y
E
A
Top View
L
A1
Side View
D1
b
1
E1
e
Bottom View
Dimensions
Symbol
Unit
A
A1
A2
b
D
D1
E
E1
e
y
L
mm
Min
Nom
0.70
0.75
-
0.19
0.22
0.35
0.42
5.90
6.00
3.25
3.37
4.90
5.00
3.85
3.97
1.27 BSC
0.00
0.04
0.50
0.60
Inch
Max
Min
Nom
0.80
0.028
0.030
0.05
-
0.25
0.007
0.009
0.48
0.014
0.016
6.10
0.232
0.236
3.50
0.128
0.133
5.10
0.193
0.197
4.10
0.151
0.156
0.05 BSC
0.08
0.000
0.001
0.75
0.020
0.024
Max
0.032
0.002
0.010
0.019
0.240
0.138
0.201
0.161
-
0.003
0.030
Note:
1. Both package length and width do not include mold flash.
2. The exposed metal pad area on the bottom of the package is connected to device ground (GND pin), so both
Floating and connecting GND of exposed pad are also available.
49 - 49
Rev.1.0
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