CYSTEKEC MTC3585N8J N- and p-channel enhancement mode mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC3585N8J
N-CH
20V
5.5A
8.0A
20.5mΩ
24.5mΩ
BVDSS
ID@VGS=4.5V(-4.5V), TA=25°C
ID@VGS=4.5V(-4.5V), TC=25°C
RDSON@VGS=4.5V(-4.5V) typ.
RDSON@VGS=2.5V(-2.5V) typ.
P-CH
-20V
-3.5A
-5.1A
60.1mΩ
79.4mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
2928-8J
MTC3585N8J
G:Gate S:Source D:Drain
Pin 1
Ordering Information
Device
MTC3585N8J-0-T1-G
Package
Shipping
2928-8J
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC3585N8J
CYStek Product Specification
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 2/13
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current *2
TA=25 °C, VGS=4.5V (-4.5V)
TA=70 °C, VGS=4.5V (-4.5V)
Continuous Drain Current
TC=25 °C, VGS=4.5V (-4.5V)
TC=100 °C, VGS=4.5V (-4.5V)
Pulsed Drain Current
IDSM
ID
IDM
*3
Limits
N-channel P-channel
20
-20
±8
±8
5.5
-3.5
4.4
-2.8
8.0
-5.1
5.1
-3.1
30
-20
TA=25°C, Single device operation
V
A
1.5 *2
TA=70°C, Single device operation
Total Power
Dissipation
Unit
TA=25°C, Single device value at dual operation
0.96 *2
PDSM
1.24 *2
TA=70°C, Single device value at dual operation
TC=25°C
3.75
PD * 1
TC=100°C
Operating Junction and Storage Temperature Range
W
0.79 *2
1.88
Tj; Tstg
°C
-55~+175
Thermal Data
Parameter
Symbol
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
20
0.5
-
20.5
24.5
5
1.2
±100
1
10
29
49
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
MTC3585N8J
V
nA
μA
mΩ
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0V
VDS=20V, VGS=0V
VDS=16V, VGS=0V, Tj=70°C
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
VDS=10V, ID=1A
CYStek Product Specification
CYStech Electronics Corp.
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
-
420
48
48
2.8
16.6
30.8
3.6
6.6
0.8
1.5
-
-
0.79
5.7
1.8
1.2
-
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 3/13
pF
VDS=10V, VGS=0V, f=1MHz
ns
VDS=10V, ID=3.5A, VGS=4.5V, RG=1Ω
nC
VDS=10V, ID=3.5A, VGS=4.5V
V
ns
nC
VGS=0V, IS=1.2A
IF=1.2A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-20
-0.4
-
60.1
79.4
5.9
-1.2
±100
-1
-10
85
160
-
-
425
59
49
3.6
19.4
38.6
4
6.3
0.8
1.6
-
-
-0.84
5.8
1.7
-1.2
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V, Tj=70°C
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2A
VDS=-10V, ID=-3A
pF
VDS=-10V, VGS=0V, f=1MHz
ns
VDS=-10V, ID=-2.5A, VGS=-4.5V, RG=1Ω
nC
VDS=-10V, ID=-2A, VGS=-4.5V
V
VGS=0V, IS=-1.2A
ns
nC
IF=-1.2A, VGS=0V, dIF/dt=100A/μs
V
nA
μA
mΩ
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*trr
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC3585N8J
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 4/13
Recommended Soldering Footprint
unit : mm
MTC3585N8J
CYStek Product Specification
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 5/13
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
30
ID, Drain Current(A)
25
20
8V, 7V, 6V, 5V, 4V, 3V, 2.5V, 2V
15
10
1.5V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
5
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=2V
VGS=4.5V
VGS=2.5V
10
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
ID, Drain Current(A)
10
0
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(ON), Normalized Static DrainSource On-State Resistance
200
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=3.5A
150
100
50
VGS=4.5V, ID=2.5A
2
RDS(ON) @Tj=25°C : 20.5mΩ typ.
1.6
1.2
0.8
VGS=2.5V, ID=1.2A
RDS(ON) @Tj=25°C : 24.5mΩ typ.
0.4
0
0
MTC3585N8J
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 6/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
1000
Ciss
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0
5
10
15
VDS, Drain-Source Voltage(V)
-75 -50 -25
20
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
10
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
6
4
ID=10V
2
ID=3.5A
0
0.01
0.1
ID, Drain Current(A)
0
1
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
100
10
ID, Maximum Drain Current(A)
RDS(ON)
Limited
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μs
1ms
10ms
1
100m
1s
0.1
TA=25°C, Tj=150°C, VGS=4.5V
RθJA=84°C/W,Single Pulse
DC
5
4
3
2
TA=25°C, VGS=4.5V
RθJA=84°C/W
1
0
0.01
0.01
MTC3585N8J
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
175
TJ, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 7/13
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
50
30
VDS=5V
TJ(MAX) =150°C
TA=25°C
RθJA=84°C/W
40
20
Power (W)
ID, Drain Current (A)
25
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
15
30
20
10
10
5
0
0.001
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=84 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC3585N8J
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 8/13
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
15
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-I D, Drain Current (A)
-8V, -7V, -6V, -5V,-4V,-3V
-2.5V
-2V
10
5
VGS=-1.5V
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Source Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=0V
-VSD , Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-2V
100
VGS=-2.5V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
VGS=-4.5V
10
0.2
0.01
0.1
1
0
10
2
-ID, Drain Current(A)
R DS(on) , Normalized Static Drain-Source
On-State Resistance
200
ID=-2.5A
150
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
50
2
1.8
VGS=-4.5V, ID=-2.5A
RDS(ON) @Tj=25°C : 60.1mΩ
1.6
1.4
1.2
1
0.8
VGS=-2.5V, ID=-2A
0.6
RDS(ON) @Tj=25°C : 79.4mΩ
0.4
0
0
MTC3585N8J
1
2
3
4
5
6
-VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 9/13
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0
5
10
15
-VDS, Drain-Source Voltage(V)
-75 -50 -25
20
Forward Transfer Admittance vs Drain Current
25
50
75 100 125 150 175
Gate Charge Characteristics
10
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
0
Tj, Junction Temperature(°C)
1
0.1
VDS=-10V
Pulsed
TA=25°C
6
4
VDS=-10V
2
ID=-2.5A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
100
10
-I D, Maximum Drain Current(A)
-I D, Drain Current(A)
4.5
RDS(ON)
Limited
100μs
1ms
10ms
1
100m
1s
0.1
TA=25°C, Tj=150°C, VGS=-4.5V
RθJA=84°C/W, Single Pulse
DC
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-4.5V
RθJA=84°C/W
0.5
0
0.01
0.01
MTC3585N8J
0.1
1
10
100
-ID, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 10/13
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
50
20
VDS=-5V
18
TJ(MAX) =150°C
TA=25°C
RθJA=84°C/W
40
16
14
Power (W)
-I D, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
12
10
8
30
20
6
10
4
2
0
0.001
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=84 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC3585N8J
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 11/13
Reel Dimension
Carrier Tape Dimension
MTC3585N8J
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 12/13
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC3585N8J
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C416N8J
Issued Date : 2017.01.09
Revised Date :
age No. : 13/13
2928-8J Dimension
Marking:
D1 D1 D2 D2
3585
Date
Code
S1 G1 S2 G2
8-Lead 2928-8J Plastic Package
CYStek Package Code: N8J
Millimeters
Min.
Max.
0.935
1.100
0.010
0.100
0.925
1.000
0.250
0.400
0.100
0.200
2.950
3.100
2.500
3.000
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.0368
0.0433
0.0004
0.0039
0.0364
0.0394
0.0098
0.0157
0.0039
0.0079
0.1161
0.1220
0.0984
0.1181
DIM
E1
E2
e
L
θ
θ1
Millimeters
Min.
Max.
2.300
2.500
2.650
3.050
0.65 BSC
0.300
0.600
0°
8°
7° TYP
Inches
Min.
Max.
0.0906
0.0984
0.1043
0.1201
0.0256 BSC
0.0118
0.0236
0°
8°
7° TYP
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3585N8J
CYStek Product Specification
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