Jiangsu ESDBP5V0D3 Bi-direction esd protection diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
ESDBP5V0D3
Bi-direction ESD Protection Diode
DESCRIPTION
SOD-323
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, low capacitance, and fast
response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection
makes them a flexible solution for applications such as HDMI, Display Port TM, and
MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer
equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Bi-directional ESD protection of one line

Fast response time

Reverse stand−off voltage: 5V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current

Excellent package:1.7mm×1.3mm×1.0mm
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
z
Computers and peripherals
z
Portable electronics
z
Control & monitoring systems
z
Set-top box
z
Audio and video equipment
z
Other electronics equipments communi-
z
Cellular handsets and accessories
cation systems
MARKING
05C = Device code
05C
Solid dot = Green molding compound device,if none,
the normal device
05C
Front side
www.cj-elec.com
1
A-1,Jan,2015
CHANGJIANG ELEC.TECH.
ESDBP5V0D3
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Per Human Body Model
(1)
VESD
Machine Model
ESD Voltage
Peak Pulse Current
±25
kV
±16
±0.4
(2)
750
W
(2)
30
A
PPP
Peak Pulse Power
Unit
±25
Contact Model
JESD22-A114-B ESD Voltage
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
www.cj-elec.com
8/20μs pulse waveform according to IEC 61000-4-5
2
A-1,Jan,2015
CHANGJIANG ELEC.TECH.
ESDBP5V0D3
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
V-I characteristics for a Bi-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Junction capacitance
Symbol
Test conditions
Min
Typ
(1)
VRWM
IR
V(BR)
(2)
VC
CJ
VRWM=5V
IT=1mA
6
IPP=30A
120
VR=0V,f=1MHz
Max
Unit
5
V
1
μA
8
V
25
V
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
www.cj-elec.com
3
A-1,Jan,2015
CHANGJIANG ELEC.TECH.
ESDBP5V0D3
TYPICAL CHARACTERISTICS
Reverse
Capacitance Characteristics
Characteristics
100
140
Ta=25℃
Pulsed
Ta=25℃
50
REVERSE CURRENT IR
f=1MHz
130
120
JUNCTION CAPACITANCE
CJ (pF)
(mA)
75
25
110
0
Ta=100℃
100
-25
-50
80
-75
-100
90
-9
-6
-3
0
REVERSE VOLTAGE
VC ——
3
VR
6
70
9
(V)
0
1
2
REVERSE VOLTAGE
3
4
VR
5
(V)
IPP
30
Ta=25℃
tp=8/20us
CLAMPING VOLTAGE VC(V)
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
REVERSE PEAK PULSE CURRENT IPP (A)
www.cj-elec.com
4
A-1,Jan,2015
CHANGJIANG ELEC.TECH.
ESDBP5V0D3
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
www.cj-elec.com
5
A-1,Jan,2015
CHANGJIANG ELEC.TECH.
ESDBP5V0D3
TAPE AND REEL INFORMATION
www.cj-elec.com
6
A-1,Jan,2015
Similar pages