ON CPH3360-TL-W Single p-channel power mosfet Datasheet

CPH3360
Power MOSFET
–30V, 303mΩ, –1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• High Speed Switching
• 4V drive
• Pb-Free, Halogen Free and RoHS compliance
ID Max
−30V
532mΩ@ −4.5V
−1.6A
Value
3
Unit
Drain to Source Voltage
VDSS
−30
Gate to Source Voltage
VGSS
ID
±20
V
−1.6
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−6.4
A
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
PD
0.9
W
Junction Temperature
Tj
150
°C
V
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL
MARKING
LOT No.
Symbol
WS
Parameter
TL
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
RDS(on) Max
303mΩ@ −10V
ELECTRICAL CONNECTION
P-Channel
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Junction to Ambient
When mounted on ceramic substrate
2
(900mm × 0.8mm)
VDSS
617mΩ@ −4V
Typical Applications
• DC/DC Converter
Drain Current (DC)
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Value
138.8
1
Unit
See detailed ordering and shipping
information on page 5 of this data sheet.
°C/W
Publication Order Number :
CPH3360/D
CPH3360
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Conditions
Value
min
ID=−1mA, VGS=0V
VDS=−30V, VGS=0V
VGS=±16V, VDS=0V
−30
VDS=−10V, ID=−1mA
−1.2
typ
max
Unit
V
−1
μA
±10
μA
−2.6
V
VDS=−10V, ID=−0.8A
1.3
RDS(on)1
RDS(on)2
ID=−0.8A, VGS=−10V
233
303
mΩ
ID=−0.4A, VGS=−4.5V
380
532
mΩ
RDS(on)3
Ciss
ID=−0.4A, VGS=−4V
441
617
mΩ
Output Capacitance
Coss
VDS=−10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
16
pF
Turn-ON Delay Time
td(on)
4.0
ns
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Static Drain to Source On-State
Resistance
Input Capacitance
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
82
See specified Test Circuit
VDS=−15V, VGS=−10V, ID=−1.6A
S
pF
3.3
ns
12
ns
5.4
ns
2.2
nC
0.36
nC
0.49
nC
VSD
Forward Diode Voltage
IS=−1.6A, VGS=0V
−0.9
−1.5
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --0.8A
RL=18.75Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
CPH3360
S
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2
CPH3360
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3
CPH3360
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4
CPH3360
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
Recommended
Soldering Footprint
1 : Gate
2 : Source
0.6
2.4
1.4
3 : Drain
0.95
0.95
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
WS
CPH3
SC-59, SOT-23, TO-236
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
CPH3360-TL-H
CPH3360-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
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