ISC IPW60R120P7 N-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPW60R120P7
IIPW60R120P7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤120mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
26
A
IDM
Drain Current-Single Pulsed
78
A
PD
Total Dissipation @TC=25℃
95
W
Tj
Max. Operating Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
1.31
℃/W
62
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IPW60R120P7
IIPW60R120P7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.41mA
RDS(on)
Drain-Source On-Resistance
IGSS
MIN
TYP
MAX
600
V
4
V
VGS=10V; ID=8.2A
120
mΩ
Gate-Source Leakage Current
VGS= 20V; VDS=0V
1
μA
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
1
μA
VSD
Diode forward voltage
IF=8.2A, VGS = 0V
isc website:www.iscsemi.cn
2
3
UNIT
V
isc & iscsemi is registered trademark
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