Mitsubishi ML920L40S-01 2.5gbps ingaasp dfb laser diode Datasheet

MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
Notice : Some parametric limits are subject to change
TYPE
NAME
ML925B40F / ML920J40S
ML925J40F / ML920L40S
DESCRIPTION
APPLICATION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0oC to 85 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
· 2.5Gbps long-haul transmission
· Coarse WDM application
FEATURES
· λ/4 shifted grating structure
· Wide temperature range operation (0oC to 85oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
VRL
IFD
VRD
Tc
Tstg
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Conditions
CW
---------
Ratings
6
150
2
2
20
Unit
mW
mA
V
mA
V
Case temperature
---
0 to +85
ºC
Storage temperature
---
-40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Ith
Parameter
Threshold current
Iop
Operation current
Vop
Operating voltage
η
Slope efficiency
λp
θ //
Peak wavelength
Side mode suppression ratio
Side mode suppression ratio(RF)
Beam divergence angle (parallel) <*6>
θ┴
(perpendicular) <*6>
SMSR
fr
tr,tf
Resonance frequency
Rise and Fall time <*7>
Test conditions
CW
CW
<*1>
Tc=85ºC
<*2>
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85ºC
<*2>
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW <*3>
CW, Po=5mW
CW, Po=5mW, Tc=0 to 85ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
CW, Po=5mW
Min. Typ. Max.
Unit
--10
15
mA
--35
40
--45
50
--35
45
mA
--70
80
--90
100
--1.1
1.5
V
0.17 0.22
--mW/mA
0.15 0.20
--<*4>,<*5>
nm
35
45
--dB
--45
----25
--deg.
CW, Po=5mW
---
30
---
deg.
2.48832Gbps,Ib=Ith, Ipp=40mA
---
11
---
GHz
---
80
120
ps
0.1
-----
----10
1.0
0.1
20
mA
µA
pF
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW,VRD=1V,RL=10Ω
VRD=5V
VRD=5V
Monitoring output current (PD)
Im
Dark current (PD)
Id
Ct
Capacitance (PD)
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Feb. 2005
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
2.5Gbps InGaAsP DFB LASER DIODE
<*4> Peak Wavelength
Type
ML925B40F-01 / ML920J40S-01
ML925J40F-01 / ML920L40S-01
ML925B40F-04 / ML920J40S-04
ML925J40F-04 / ML920L40S-04
ML925B40F-05 / ML920J40S-05
ML925J40F-05 / ML920L40S-05
ML925B40F-06 / ML920J40S-06
ML925J40F-06 / ML920L40S-06
ML925B40F-07 / ML920J40S-07
ML925J40F-07 / ML920L40S-07
ML925B40F-08 / ML920J40S-08
ML925J40F-08 / ML920L40S-08
ML925B40F-09 / ML920J40S-09
ML925J40F-09 / ML920L40S-09
ML925B40F-10 / ML920J40S-10
ML925J40F-10 / ML920L40S-10
ML925B40F-11 / ML920J40S-11
ML925J40F-11 / ML920L40S-11
Symbol
Test Condition
CW, Po=5mW
Tc= 0 to 85ºC
λp
CW, Po=5mW
Tc= 25ºC
Min.
Limits
Typ.
Max.
1530
1550
1570
1467
1470
1473
1487
1490
1493
1507
1510
1513
1527
1530
1533
1547
1550
1553
1567
1570
1573
1587
1590
1593
1607
1610
1613
Min.
Limits
Typ.
Max.
1468
1470
1472
1488
1490
1492
1508
1510
1512
1528
1530
1532
1548
1550
1552
1568
1570
1572
1588
1590
1592
1608
1610
1612
Unit
nm
<*5> Peak Wavelength
Type
ML925B40F-12 / ML920J40S-12
ML925J40F-12 / ML920L40S-12
ML925B40F-13 / ML920J40S-13
ML925J40F-13 / ML920L40S-13
ML925B40F-14 / ML920J40S-14
ML925J40F-14 / ML920L40S-14
ML925B40F-15 / ML920J40S-15
ML925J40F-15 / ML920L40S-15
ML925B40F-16 / ML920J40S-16
ML925J40F-16 / ML920L40S-16
ML925B40F-17 / ML920J40S-17
ML925J40F-17 / ML920L40S-17
ML925B40F-18 / ML920J40S-18
ML925J40F-18 / ML920L40S-18
ML925B40F-19 / ML920J40S-19
ML925J40F-19 / ML920L40S-19
Symbol
λp
Test Condition
CW, Po=5mW
Tc= 25ºC
MITSUBISHI
ELECTRIC
Unit
nm
Feb. 2005
MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
Notice : Some parametric limits are subject to change
OUTLINE DRAWINGS
Dimensions : mm
ML925B40F
ML920J40S
+0
(3)
φ5.6 -0.03
φ4.25
Case
LD
Y
(1)
(0.25)
(2)
2-90°
(3)
PD
(4)
X
(2)
(0.25)
(1)
(4)
ML925B11F
ML925B40F
(3)
φ3.55±0.1
(Glass)
φ2.0Min.
2.1±0.15
Facet
Reference
Plane
(1)
(2)
PD
1.2
Emitting
(4)
18 ±1
±0.1
Case
LD
φ1.0Min.
1.27 ±0.03
0.25 ±0.03
1±0.1
ML920J40S
ML920J11S
φ2.0 ±0.25
(P.C.D.)
4-φ0.45 ±0.05
(1)
Pin Connection
( Top view )
(2)
Dimensions : mm
ML925J40F
ML920L40S
(3)
+0
φ5.6 -0.03
Case
LD
φ4.3
Y
(1)
(0.25)
(2)
Top View
(3)
(2)
(4)
X
(0.25)
2-90°
PD
(1)
(4)
ML925J11F
ML925J40F
1±0.1
(3)
φ3.75±0.1
Z
Case
18 ±1
±0.1
1.27 ±0.03
3.97 ±0.15
Emitting
Facet
Reference
Plane
1.2
(7.51)
LD
(1)
(2)
PD
(4)
φ2.0±0.25
(P.C.D.)
ML920L40S
ML920L11S
4-φ0.45±0.05
(1)
(2)
MITSUBISHI
ELECTRIC
Pin
Connection
Pin Connection
((Top
Topview)
view )
Feb. 2005
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