Diodes DMP3035SFG 30v p-channel enhancement mode mosfet powerdiâ® Datasheet

DMP3035SFG
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
V(BR)DSS
Features and Benefits
•
Low RDS(ON) – ensures on state losses are minimized
•
Small form factor thermally efficient package enables higher
density end products
-9.5 A
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
-8.5 A
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
RDS(ON) max
ID max
TA = 25°C
20mΩ @ VGS = -10V
29mΩ @ VGS = -5V
-30V
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
Drain
Pin 1
S
S
S
G
Gate
D
D
D
Source
D
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP3035SFG-7
DMP3035SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
ADVANCE INFORMATION
Product Summary
P35
P35 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
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DMP3035SFG
Document number: DS35440 Rev. 3 - 2
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DMP3035SFG
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -5V
Steady
State
t<10s
ID
Value
-30
±25
-8.5
-6.7
ID
-12.5
-10.0
A
ID
-7.0
-5.5
A
Units
V
V
A
-10.0
-8.0
-70
-3.6
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
IDM
IS
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
RθJA
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJA
RθJC
TJ, TSTG
100
Value
0.95
135
65
2.3
55
26
6.14
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
100
P(PK), PEAK TRANSIENT POIWER (W)
PW = 10µs
RDS(on)
Limited
-ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
0.1
TJ(max) = 150°C
TA = 25°C
Single Pulse
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
90
80
Single Pulse
RθJA = 61°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
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DMP3035SFG
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ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 54°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-1.0
±100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
-1.7
15
21
22
-0.74
-2.5
20
29
-1.0
V
Static Drain-Source On-Resistance
-1.0
-
VDS = VGS, ID = -250μA
VGS = -10V, ID = -8A
VGS = -5V, ID = -5A
VDS = -5V, ID = -10.0A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1633
459
214
6.5
17
35.5
4.6
5.7
8.5
14
50
25.8
13
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = -4.5V
Total Gate Charge VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, VGS = -10V, ID = 8A
VGEN = -10V, VDD = -15V,
RGEN = 3Ω, ID = -15A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP3035SFG
Document number: DS35440 Rev. 3 - 2
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May 2012
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DMP3035SFG
30
30
VGS = 10V
VGS = 4.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = 4.0V
VGS = 3.5V
15
VGS = 3.0V
10
5
20
15
10
TA = 150°C
TA = 125°C
5
VGS = 2.0V
0
0
0.5
1.0
1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
0
1.0
2.0
0.03
0.02
0.01
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
1.3
1.1
0.9
0.7
1.5
2.0
2.5
3.0
3.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristics
4.0
0.05
VGS= -4.5V
0.04
TA = 150°C
TA = 125°C
0.03
T A = 85°C
TA = 25° C
0.02
T A = -55°C
0.01
0
0
30
1.7
0.5
-50
TA = 85°C
TA = 25°C
TA = -55°C
VGS = 2.5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
VDS = -5.0V
25
20
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
ADVANCE INFORMATION
25
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
30
0.040
0.036
0.032
VGS = -5V
ID = -5A
0.028
0.024
0.020
0.016
VGS = -10V
ID = -10A
0.012
0.008
0.004
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
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DMP3035SFG
Document number: DS35440 Rev. 3 - 2
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30
2.5
25
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
3.0
2.0
1.5
1.0
0.5
20
15
10
5
0
-50
0
0.4
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
10,000
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
Ciss
1,000
Coss
TA = 150°C
1,000
TA = 125°C
100
T A = 85°C
10
Crss
TA = 25°C
100
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
20
1
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
10
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
DMP3035SFG
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
40
POWERDI is a registered trademark of Diodes Incorporated
DMP3035SFG
Document number: DS35440 Rev. 3 - 2
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DMP3035SFG
ADVANCE INFORMATION
Package Outline Dimensions
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
A
A3
A1
D
D2
L
(4x)
1
Pin 1 ID
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
Suggested Pad Layout
X
G
8
Y2
5
G1
Y1
Y
1
4
Y3
X2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
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DMP3035SFG
Document number: DS35440 Rev. 3 - 2
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May 2012
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DMP3035SFG
ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2012, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMP3035SFG
Document number: DS35440 Rev. 3 - 2
7 of 7
www.diodes.com
May 2012
© Diodes Incorporated
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