ESJC50F12 450mA 12kV 100nS--High voltage silicon rectifier diode HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high SHAPE DISPLAY: reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. SIZE: (Unit:mm) HVGT NAME: DO-721 APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.1 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units VRRM Ta=25°C; 12 kV IF Ta=55°C;Resistive Load 450 mA IFSM Ta=25°C; 1/2 Sine(60Hz) 30 A Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature TJ -55~+150 °C Allowable Operation Case Temperature Tc 125 °C TSTG -55~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance Ta=25°C (Unless otherwise specified) Symbols Condition Data value Units VF at 25°C;IF =IF(AV) 18 V IR1 at 25°C;VR =VRRM 5.0 uA IR2 at 100°C;VR =VRRM 50 uA TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 100 nS CJ at 25°C; VR=0V; f=1MHz 4.3 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2016 1 / 2 ESJC50F12 450mA 12kV 100nS--High voltage silicon rectifier diode Fig 1 Fig 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform This applies to most diodes in our catalog that show average current rating at 55°C unless otherwise specified. Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum Max operating temperature is 150°C unless otherwise specified. (IFAVM) of the D.U.T GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2016 2 / 2