DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED Product Summary Features and Benefits V(BR)DSS RDS(ON) max 60V 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V • • • • • ID max TA = +25°C 9.2 A 7.5 A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it • • ideal for high efficiency power management applications. • Load Switch • Adaptor Switch • Notebook PC • • • • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (approximate) D SO-8 Pin1 S D S D S D G D G S Pin-Out Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMT6016LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking T6016LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) T6016LS N3016LS YY WW 1 DMT6016LSS Document number: DS37237 Rev. 4 - 2 4 1 of 6 www.diodes.com September 2014 © Diodes Incorporated DMT6016LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 60 ±20 9.2 7.4 ID 11.9 9.5 A ID 7.5 6.0 A A 9.7 7.7 60 2 15.3 11.7 A A A mJ Value 1.5 85 45 2.1 74 37 13 -55 to 150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IDM IS IAS EAS A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 µA VGS(th) VSD 1 — — — — — — 0.7 2.5 18 28 1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr — — — — — — — — — — — — — — 864 282 27 1.3 8.4 17 3.1 4.3 3.4 5.2 13 7 22 11 — — — — — — — — — — — — — — RDS (ON) V nA V mΩ V Test Condition VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 10A ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT6016LSS Document number: DS37237 Rev. 4 - 2 2 of 6 www.diodes.com September 2014 © Diodes Incorporated DMT6016LSS 30.0 30 27.0 27 24 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.0V VGS = 4.5V 24.0 21.0 18.0 15.0 VGS = 3.5V 12.0 9.0 3.0 18 15 12 9 TA = 150°C 0 3 4 2 1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 4.5V 0.02 0.015 VGS = 10V 0.01 0.005 0 0 3 6 9 12 15 18 21 24 27 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 VGS = 10V ID = 10A 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 5 On-Resistance Variation with Temperature DMT6016LSS Document number: DS37237 Rev. 4 - 2 3 of 6 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 0 1.5 5 0.03 0.025 TA = 125°C 3 VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 21 6 6.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED VDS = 5.0V VGS = 10V 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.025 VGS = 10V TA = 150°C TA = 125°C 0.02 TA = 85°C 0.015 TA = 25°C TA = -55°C 0.01 0.005 0 2 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 4 20 0.04 0.035 0.03 VGS = 4.5V ID = 6A 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature September 2014 © Diodes Incorporated DMT6016LSS 30 24 2.5 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 27 ID = 1mA 2 ID = 250µA 1.5 1 21 18 15 12 9 TA = 25°C TA = 125°C 6 0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 TA = 150°C TA = 125°C C T, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) TA = 85°C TA = 150°C 3 1000 TA = 85°C 100 10 TA = 25°C 1 C iss 1000 Coss 100 Crss 10 f = 1MHz 0.1 1 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited 8 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED 3 VDS = 30V ID = 10A 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6016LSS Document number: DS37237 Rev. 4 - 2 18 4 of 6 www.diodes.com 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 September 2014 © Diodes Incorporated DMT6016LSS 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 85°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 1 0.1 0.01 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 0.001 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED D = 0.9 D = 0.7 E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 θ 0° 8° All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMT6016LSS Document number: DS37237 Rev. 4 - 2 5 of 6 www.diodes.com September 2014 © Diodes Incorporated DMT6016LSS IMPORTANT NOTICE NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMT6016LSS Document number: DS37237 Rev. 4 - 2 6 of 6 www.diodes.com September 2014 © Diodes Incorporated