Diodes DMN2019UTS 20v n-channel enhancement mode mosfet Datasheet

DMN2019UTS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = 25°C
18.5mΩ @ VGS = 10V
5.4 A
21mΩ @ VGS = 4.5V
5.0 A
24mΩ @ VGS = 2.5V
4.6 A
31mΩ @ VGS = 1.8V
3.5 A
NEW PRODUCT
V(BR)DSS
20V
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
•
•
•
•
•
Power management functions
Load Switch
•
•
Case: TSSOP-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.039 grams (approximate)
D
D
TSSOP-8
1
2
3
4
D
S1
S1
G1
D
S2
S2
G2
8
7
6
5
G1
G2
S1
ESD PROTECTED TO 2kV
Top View
Top View
Pin Configuration
Bottom View
S2
N-Channel
N-Channel
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN2019UTS-13
Notes:
Case
TSSOP-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
N2019U
Part no
YY WW
Xth week : 01~53
Year: “12” = 2012
1
4
Top View
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Value
20
±12
Units
V
V
Continuous Drain Current (Note 5)
VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
5.4
4.3
A
Continuous Drain Current (Note 5)
VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
ID
4.6
3.7
A
TA = +25°C
IS
0.9
A
IDM
30
A
Steady
Stat
Pulsed Drain Current (Note 5) 10μs pulse, duty cycle = 1%
Continuous Body Diode Forward Current (Note 5)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
0.78
161
26
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
BVSGS
20
±12
-
1.0
10
-
V
µA
µA
V
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 0V, IG = ±250μA
VGS(th)
0.35
RDS (ON)
|Yfs|
VSD
-
0.95
18.5
21
21.5
22.5
23
24
31
1.0
V
-
15.5
16.5
17
17.5
18
19
24
13
0.7
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7A
VGS = 4.5V, ID = 7A
VGS = 4.0V, ID = 7A
VGS = 3.6V, ID = 6.5A
VGS = 3.1V, ID = 6.5A
VGS = 2.5V, ID = 5.5A
VGS = 1.8V, ID = 3.5A
VDS = 5V, ID = 5A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
143
74
29
202
8.8
1.4
3.0
53
78
562
234
-
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 6.5A
VDD = 10V, VGS = 4.5V,
RL = 10Ω, RG = 6Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
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20
30
VGS = 8V
VGS = 3.0V
16
VGS = 2.5V
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 2.0V
12
15
VGS = 1.5V
10
8
TA = 150°C
4
5
TA = 125°C
TA = 85°C
T A = 25°C
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.05
0.04
0.03
VGS = 1.8V
0.02
VGS = 2.5V
VGS = 4.5V
0.01
0
0
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
T A = -55°C
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2
0.04
VGS = 4.5V
0.03
T A = 150°C
0.02
T A = 125°C
TA = 85°C
T A = 25°C
0.01
0
TA = -55°C
0
4
8
12
16
ID, DRAIN CURRENT (A)
20
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
0.04
1.4
VGS = 2.5V
ID = 5.5A
1.2
RDSON, DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
VDS = 5V
VGS = 4.5V
VGS = 4.5V
ID = 10A
1.0
0.03
VGS = 2.5V
ID = 5.5A
0.02
VGS = 4.5V
ID = 10A
0.01
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
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0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
December 2012
© Diodes Incorporated
DMN2019UTS
1.2
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
20
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
TA = 25°C
12
8
4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100
1,000
-ID, DRAIN CURRENT (A)
Ciss
Coss
100
Crss
1.2
RDS(on)
Limited
f = 1MHz
C, CAPACITANCE (pF)
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
PW = 1ms
0.1
PW = 100µs
PW = 10µs
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
TJ(m ax) = 150°C
TA = 25°C
Single Pulse
0.01
0.1
10
20
-VDS,
1
10
DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.4
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 157°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = Single Pulse
0.001
0.00001
0.0001
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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Package Outline Dimensions
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
TSSOP-8
Dim Min Max Typ
a
0.09
−
−
A
1.20
−
−
A1 0.05 0.15
−
A2 0.825 1.025 0.925
b
0.19 0.30
−
c
0.09 0.20
−
D
2.90 3.10 3.025
See Detail C
E
E1
e
e
c
b
E
Gauge plane
D
L
A1
−
−
0.65
6.40
E1 4.30 4.50 4.425
L
0.45 0.75 0.60
All Dimensions in mm
a
A2
A
−
−
Detail C
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
C3
C1
C2
DMN2019UTS
Document number: DS35556 Rev. 2 - 2
G
Dimensions Value (in mm)
X
0.45
Y
1.78
C1
7.72
C2
0.65
C3
4.16
G
0.20
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NEW PRODUCT
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