DMN33D8LT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ID TA = +25°C 200 mA 115 mA RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V 30V NEW PRODUCT NEW PRODUCT Features Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • N-Channel MOSFET • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications • • • DC-DC Converters Case: SOT523 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Power Management Functions • Battery Operated Systems and Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.002 grams (approximate) Drain SOT523 D Gate G ESD PROTECTED Gate Protection Diode Top View Source S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN33D8LT-7 DMN33D8LT-13 Notes: Case SOT523 SOT523 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3LT = Product Type Marking Code YM = Date Code Marking Y = Year ex: A = 2013 M = Month ex: 9 = September Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMN33D8LT Document number: DS37091 Rev. 2 - 2 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 5 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D July 2014 © Diodes Incorporated DMN33D8LT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 30 V Gain-Source Voltage VGSS ±20 V ID 115 mA Symbol Value Unit PD 240 mW RθJA 521 °C /W PD 300 mW RθJA 420 °C /W TJ, TSTG -55 to +150 °C NEW PRODUCT NEW PRODUCT Drain Current (Note 5) Continuous Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient(Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient(Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 µA VGS = ±20V, VDS = 0V VGS(th) 0.8 ⎯ 1.5 V VDS = 3V, ID = 100µA ⎯ ⎯ 5 Ω VGS = 4V, ID = 10mA ⎯ ⎯ 7 Ω VGS = 2.5V, ID = 5mA VSD ⎯ ⎯ 1.2 V VGS = 0V, IS = 115mA Input Capacitance Ciss ⎯ 48 ⎯ Output Capacitance Coss ⎯ 11 ⎯ pF VDS = 5V, VGS = 0V, f = 1.0MHz ⎯ ⎯ nC VGS = 10V, VDS = 10V, ID = 250mA nS VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS (ON) DYNAMIC CHARACTERISTICS (Note 8) Reverse Transfer Capacitance Crss ⎯ 8 Total Gate Charge VGS = 10V Qg ⎯ 0.55 Total Gate Charge VGS = 4.5V Qg ⎯ 1.23 ⎯ Gate-Source Charge Qgs ⎯ 0.14 ⎯ Gate-Drain Charge Qgd ⎯ 0.14 ⎯ Turn-On Delay Time tD(on) ⎯ 2.9 ⎯ Turn-On Rise Time tr ⎯ 2.6 ⎯ Turn-Off Delay Time tD(off) ⎯ 18.2 ⎯ tf ⎯ 13.6 ⎯ Turn-Off Fall Time Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN33D8LT Document number: DS37091 Rev. 2 - 2 2 of 5 www.diodes.com July 2014 © Diodes Incorporated DMN33D8LT 1.0 1 VDS = 5.0V 0.9 VGS = 10V VGS = 3.5V 0.6 VGS = 2.5V 0.5 0.4 0.3 VGS = 2.0V 0.1 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.7 0.4 TA = 150°C 0.2 T A = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 4.0V VGS = 4.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 VGS = 10V 0 TA = 85°C T A = 25°C T A = -55°C VGS = 2.5V 0.01 0.6 VGS = 1.8V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.8 VGS = 4.5V 0.2 0.8 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.60 VGS = 4.5V T A = 150°C 0.50 T A = 125°C 0.40 TA = 85°C TA = 25°C 0.30 TA = -55°C 0.20 0.10 0.00 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT NEW PRODUCT 0.8 1.5 VGS = 4.5V ID = 250mA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN33D8LT Document number: DS37091 Rev. 2 - 2 3 of 5 www.diodes.com 0.4 VGS = 4.5V ID = 250mA 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated 1 1.8 0.9 1.6 0.8 1.4 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 ID = 1mA 1.2 ID = 250µA 1 0.8 0.6 0.4 0.6 0.5 TA = 150°C 0.4 TA = 125°C 0.3 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 1000 TA = 85°C T A = 25°C TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current VGS GATE THRESHOLD VOLTAGE (V) 10 f = 1MHz 100 Ciss 10 C oss Crss 1 0.7 0.1 0.2 CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT NEW PRODUCT DMN33D8LT 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 30 8 6 VDS = 10V ID = 250mA 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 1.4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K J M N D DMN33D8LT Document number: DS37091 Rev. 2 - 2 L 4 of 5 www.diodes.com July 2014 © Diodes Incorporated DMN33D8LT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT Y Z Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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