Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE(sat) tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 56 24 130 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 48 @ ≤ VCES A PC TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate E = Emitter 300 260 °C °C Features 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 G z z z VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 125°C 2.28 1.95 6.5 V 10 500 μA μA ±100 nA 2.70 V V E C (Tab) C = Collector Tab = Collector Optimized for Low Switching Losses Square RBSOA International Standard Packages High Power Density Low Gate Drive Requirement Applications z z z z z z z z © 2012 IXYS CORPORATION, All Rights Reserved C Advantages z V C (Tab) TO-247 (IXGH) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified CE Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100253B(12/12) IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 gfs Cies Coes Cres 10 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc 17 S 875 60 28 pF pF pF 64 nC IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 360V, RG = 10Ω Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC110, VGE = 15V VCE = 360V, RG = 10Ω Note 2 RthJC RthCS TO-247 TO-220 Outline 7 nC 28 nC 21 33 0.40 143 68 0.30 ns ns mJ ns ns mJ 0.55 20 32 0.63 130 118 0.50 ns ns mJ ns ns mJ 0.21 0.65 °C/W °C/W Terminals: 1 - Gate 3 - Emitter 2 - Collector TO-247 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 1 2 ∅P 3 TO-263 Outline e Terminals: 1 - Gate 3 - Emitter Dim. 1 = Gate 2 = Collector 3 = Emitter 4 = Collector ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2