ON NS6A12AFT3G Watt peak power zener transient voltage suppressor Datasheet

NS6A5.0AFT3G,
SZNS6A5.0AFT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
http://onsemi.com
Unidirectional
The NS6AxxAFT3G series is designed to protect voltage sensitive
components from high voltage, high energy transients. This device
has excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6AxxAFT3G series is
ideally suited for use in computer hard disk drives, communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
Cathode
Anode
Specification Features:
•
•
•
•
•
•
•
•
Peak Reverse Working Voltage Range − 5 V to 64 V
Peak Pulse Power of 600 W (10 x 1000 msec)
ESD Rating of Class 3 (>16 kV) per Human Body Model
ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
Fast Response Time
Low Profile Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
SMA−FL
CASE 403AA
MARKING DIAGRAM
xxx
AYWWG
xxx
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Device
NS6AxxAFT3G,
SZNS6AxxAFT3G
Package
Shipping†
SMA−FL
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NS6A5.0AF/D
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
1.5
W
RqJL
20
50
mW/°C
°C/W
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5
4.0
250
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
40
A
TJ, Tstg
−65 to +150
°C
Operating and Storage Temperature Range
1.
2.
3.
4.
10 X 1000 ms, non−repetitive.
1 in square copper pad, FR−4 board.
FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IF
Parameter
VC VBR VRWM
Working Peak Reverse Voltage
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
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2
V
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VRWM
(Note 6)
IR @ VRWM
V
mA
Device*
Device
Marking
NS6A5.0AFT3G
6AA
5
NS6A6.0AFT3G
6AB
6
NS6A6.5AFT3G
6AC
NS6A7.0AFT3G
6AD
NS6A7.5AFT3G
NS6A8.0AFT3G
VC @ IPP (Note 8)
@ IT
VC
IPP
Ctyp
(Note 9)
Max
mA
V
A
pF
VBR (Note 7) Volts
Min
Nom
800
6.4
6.70
7
10
9.2
65.2
2700
800
6.67
7.02
7.37
10
10.3
58.3
2300
6.5
500
7.22
7.60
7.98
10
11.2
53.6
2140
7
500
7.78
8.19
8.6
10
12
50
2005
6AE
7.5
100
8.33
8.77
9.21
1
12.9
46.5
1890
6AF
8
50
8.89
9.36
9.83
1
13.6
44.1
1780
NS6A8.5AFT3G
6AG
8.5
10
9.44
9.92
10.4
1
14.4
41.7
1690
NS6A9.0AFT3G
6AH
9
5
10
10.55
11.1
1
15.4
39
1605
NS6A10AFT3G
6AI
10
5
11.1
11.70
12.3
1
17
35.3
1460
NS6A11AFT3G
6AL
11
5
12.2
12.85
13.5
1
18.2
33
1345
NS6A12AFT3G
6AJ
12
5
13.3
14.00
14.7
1
19.9
30.2
1245
NS6A13AFT3G
6AK
13
5
14.4
15.15
15.9
1
21.5
27.9
1160
NS6A14AFT3G
6AM
14
5
15.6
16.40
17.2
1
23.2
25.8
1085
NS6A15AFT3G
6AN
15
5
16.7
17.60
18.5
1
24.4
24
1020
NS6A16AFT3G
6AO
16
5
17.8
18.75
19.7
1
26
23.1
965
NS6A17AFT3G
6AP
17
5
18.9
19.90
20.9
1
27.6
21.7
915
NS6A18AFT3G
6AQ
18
5
20
21.05
22.1
1
29.2
20.5
870
NS6A20AFT3G
6AR
20
5
22.2
23.35
24.5
1
32.4
18.5
790
NS6A22AFT3G
6AS
22
5
24.4
25.65
26.9
1
35.5
16.9
730
NS6A24AFT3G
6AT
24
5
26.7
28.10
29.5
1
38.9
15.4
675
NS6A26AFT3G
6AU
26
5
28.9
30.40
31.9
1
42.1
14.2
630
NS6A28AFT3G
6AV
28
5
31.1
32.75
34.4
1
45.4
13.2
590
NS6A30AFT3G
6AW
30
5
33.3
35.05
36.8
1
48.4
12.4
555
NS6A33AFT3G
6AX
33
5
36.7
38.65
40.6
1
53.3
11.3
510
NS6A36AFT3G
6AY
36
5
40
42.10
44.2
1
58.1
10.3
470
NS6A40AFT3G
6AZ
40
5
44.4
46.75
49.1
1
64.5
9.3
430
NS6A43AFT3G
6A0
43
5
47.8
50.30
52.8
1
69.4
8.6
400
NS6A45AFT3G
6A1
45
5
50
52.65
55.3
1
72.2
8.3
385
NS6A48AFT3G
6A2
48
5
53.3
56.10
58.9
1
77.4
7.7
365
NS6A51AFT3G
6A3
51
5
56.7
59.70
62.7
1
82.4
7.3
345
NS6A54AFT3G
6A4
54
5
60
63.15
66.3
1
87.1
6.9
330
NS6A58AFT3G
6A5
58
5
64.4
67.80
71.2
1
93.6
6.4
310
NS6A60AFT3G
6A7
60
5
66.7
70.20
73.7
1
96.8
6.2
300
NS6A64AFT3G
6A8
64
5
71.1
74.85
78.6
1
103
5.8
280
*Includes SZ−prefix devices where applicable.
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C.
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3
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
tr≤ 10 ms
100
VALUE (%)
PEAK VALUE - IPP
HALF VALUE 50
IPP
2
tP
0
0
1
2
3
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
140
120
100
80
60
40
20
0
4
0
25
50
75
100
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. 10 × 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
Zin
LOAD
Vin
VL
Figure 3. Typical Protection Circuit
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4
125
150
NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
b
c
D
E
E1
L
D
TOP VIEW
A
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
RECOMMENDED
SOLDER FOOTPRINT*
c
C
SIDE VIEW
2X
SEATING
PLANE
5.56
1.76
b
1.30
2X
DIMENSIONS: MILLIMETERS
L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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NS6A5.0AF/D
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