PHILIPS BYV42G-200 Dual ultrafast power diode Datasheet

I2P
AK
BYV42G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
1.2 Features and benefits
„ High thermal cycling performance
„ Soft recovery characteristic minimizes
power consuming oscillations
„ Low thermal resistance
„ Very low on-state loss
„ High reverse voltage surge capability
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IO(AV)
average output current
IFSM
Conditions
Min
Typ
Max Unit
-
-
200
V
square-wave pulse; δ = 0.5 ;
Tmb ≤ 104 °C; both diodes
conducting; see Figure 1;
see Figure 2
-
-
30
A
non-repetitive peak
forward current
Tj(init) = 25 °C; tp = 10 ms;
sine-wave pulse; per diode
-
-
160
A
IRRM
repetitive peak reverse
current
tp = 2 µs; δ = 0.001
-
-
0.2
A
VESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
-
-
8
kV
IF = 15 A; Tj = 150 °C;
see Figure 4
-
0.78 0.85 V
Static characteristics
VF
forward voltage
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
Table 1.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max Unit
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs; Tj = 25 °C;
ramp recovery; see Figure 5
-
20
28
ns
IR = 1 A; IF = 0.5 A; Tj = 25 °C;
step recovery; measured at
reverse current = 0.25 A;
see Figure 6
-
13
22
ns
Dynamic characteristics
trr
reverse recovery time
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
A1
anode 1
2
K
cathode
Simplified outline
Graphic symbol
A1
3
A2
anode 2
mb
K
mounting base; connected to cathode
A2
K
sym125
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
BYV42G-200
BYV42G-200
Product data sheet
Package
Name
Description
Version
I2PAK
plastic single-ended package (I2PAK); TO-262
SOT226A
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
200
V
VRWM
crest working reverse voltage
-
200
V
VR
reverse voltage
DC
-
200
V
IO(AV)
average output current
square-wave pulse; δ = 0.5 ; Tmb ≤ 104 °C;
both diodes conducting; see Figure 1;
see Figure 2
-
30
A
IFRM
repetitive peak forward current
δ = 0.5 ; tp = 25 µs; Tmb ≤ 104 °C; per diode
-
30
A
IFSM
non-repetitive peak forward
current
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
-
150
A
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C;
per diode
-
160
A
IRRM
repetitive peak reverse current
δ = 0.001 ; tp = 2 µs
-
0.2
A
IRSM
non-repetitive peak reverse
current
tp = 100 µs
-
0.2
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
VESD
electrostatic discharge voltage
-
8
kV
HBM; C = 250 pF; R = 1.5 kΩ; all pins
003aac342
20
a = 1.57
δ=1
Ptot
(W)
003aac343
15
Ptot
(W)
1.9
0.5
2.2
15
2.8
10
0.2
4.0
10
0.1
5
5
0
0
0
Fig 1.
5
10
15
20
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV42G-200
Product data sheet
0
25
IF(AV) (A)
Fig 2.
5
10
IF(AV) (A)
15
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
with heatsink compound; both diodes
conducting
-
-
1.4
K/W
with heatsink compound; per diode;
see Figure 3
-
-
2.4
K/W
in free air
-
60
-
K/W
Rth(j-a)
thermal resistance from
junction to ambient
003aac345
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
10−3
10−6
Fig 3.
T
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV42G-200
Product data sheet
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 15 A; Tj = 150 °C; see Figure 4
-
0.78
0.85
V
IF = 15 A; Tj = 25 °C; see Figure 4
-
0.95
1.05
V
IF = 30 A; Tj = 25 °C; see Figure 4
-
1
1.2
V
VR = 200 V; Tj = 100 °C
-
0.5
1
mA
VR = 200 V; Tj = 25 °C
-
10
100
µA
Static characteristics
forward voltage
VF
reverse current
IR
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
-
6
15
nC
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
-
20
28
ns
IF = 0.5 A; IR = 1 A; step recovery;
measured at reverse current = 0.25 A;
Tj = 25 °C; see Figure 6
-
13
22
ns
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C;
see Figure 7
-
-
1
V
forward recovery voltage
VFR
003aac344
50
dlF
IF
IF
(A)
dt
40
trr
30
time
25 %
20
(1)
(2)
(3)
Qr
100 %
10
IRM
IR
003aac562
0
0
Fig 4.
0.5
1
VF (V)
1.5
Forward current as a function of forward
voltage
BYV42G-200
Product data sheet
Fig 5.
Reverse recovery definitions; ramp recovery
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 11
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
IF
IF
IF
trr
time
time
0.25 x IR
VF
Qr
VFRM
IR
IR
VF
003aac563
time
001aab912
Fig 6.
Reverse recovery definitions; step recovery
BYV42G-200
Product data sheet
Fig 7.
Forward recovery definitions
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
6 of 11
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226A
A
A1
E
D1
D
L1
b1
Q
b2
L
1
2
3
c
b
e
e
0
5
Dimensions
Unit
mm
max
nom
min
10 mm
scale
A
A1
b
b1
b2
c
D
D1
E
e
4.7
1.40 0.95 1.40
1.7
0.65
9.4
1.32 10.30
4.3
1.15 0.70 1.14
1.3
0.45
8.6
1.02 9.65
2.54
(REF)
L
15.0
12.5
L1
3.0
(REF)
Q
2.6
2.2
sot226a_po
Outline
version
SOT226A
Fig 8.
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-17
09-08-25
TO-262
Package outline SOT226A (I2PAK)
BYV42G-200
Product data sheet
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
7 of 11
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYV42G-200 v.1
20110111
Product data sheet
-
-
BYV42G-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
8 of 11
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
BYV42G-200
Product data sheet
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Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
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the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
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9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BYV42G-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
10 of 11
BYV42G-200
NXP Semiconductors
Dual ultrafast power diode
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 January 2011
Document identifier: BYV42G-200
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