PD - 97656
AUIRL7736M2TR
AUIRL7736M2TR1
AUTOMOTIVE GRADE
DirectFET® Power MOSFET
V(BR)DSS
40V
RDS(on) typ.
2.2mΩ
max.
3.0mΩ
ID (Silicon Limited)
112A
Qg
52nC
• Logic Level
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
D
SC
M2
S
S
S
D
DirectFET ® ISOMETRIC
M4
Applicable DirectFET Outline and Substrate Outline
SB
S
G
M4
L4
L6
L8
Description
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance
improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The
AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
f
e
i
h
g
g
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Max.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Package Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
j
k
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
fl
f
h
Units
40
± 16
112
79
179
22
450
63
2.5
68
119
See Fig. 18a,18b,16,17
260
-55 to + 175
V
A
W
mJ
A
mJ
°C
Typ.
Max.
Units
–––
12.5
20
–––
1.0
60
–––
–––
2.4
–––
°C/W
0.42
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
04/07/11
AUIRL7736M2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
gfs
RG
IDSS
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
40
–––
–––
0.03
–––
–––
–––
–––
1.0
–––
152
–––
–––
–––
–––
–––
2.2
3.2
1.8
-6.9
–––
0.9
–––
–––
–––
–––
3.0
4.3
2.5
–––
–––
–––
5
250
100
-100
Units
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 67A
VGS = 4.5V, ID = 56A
V
VDS = VGS, ID = 150μA
mV/°C
VDS = 10V, ID = 67A
S
i
i
Ω
μA
nA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
52
8.1
6.2
33
4.7
39.2
31
48
210
56
76
5055
960
525
3540
860
1306
78
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
nC
nC
ns
pF
Conditions
VDS = 20V
VGS = 4.5V
ID = 67A
See Fig.11
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 4.5V
ID = 67A
RG = 6.8Ω
i
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
Surface mounted on 1 in. square Cu
(still air).
Min.
Typ.
Max.
–––
–––
112
–––
–––
450
–––
–––
–––
–––
32
23
1.3
48
35
Mounted to a PCB with small
clip heatsink (still air)
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS = 67A, VGS = 0V
IF = 67A, VDD = 20V
i
di/dt = 100A/μs
D
G
S
i
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes through are on page 11
2
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AUIRL7736M2TR/TR1
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
††
Human Body Model
Charged Device
Model
MEDIUM-CAN
MSL1, 260°C
Class M4 (+/- 400V)
AEC-Q101-002
†††
Class H1C (+/- 2000V)
AEC-Q101-001
†††
N/A
AEC-Q101-005
RoHS Compliant
Yes
http://www.irf.com
Qualification standards can be found at International Rectifiers web site:
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRL7736M2TR/TR1
1000
1000
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
1
2.5V
BOTTOM
2.5V
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
1000
Fig 1. Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
ID = 67A
6
5
T J = 125°C
3
2
TJ = 25°C
1
0
2
4
6
8
10
12
14
16
100
1000
5
4
T J = 125°C
3
2
T J = 25°C
1
Vgs = 10V
0
18
0
25
50
75
100 125 150 175 200
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 4. Typical On-Resistance vs. Drain Current
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
7
4
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
TJ = -40°C
TJ = 25°C
TJ = 175°C
100
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID = 67A
VGS = 10V
1.5
1.0
0.5
5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRL7736M2TR/TR1
1000
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
3.0
2.5
2.0
ID = 150μA
1.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.0
TJ = -40°C
TJ = 25°C
T J = 175°C
100
10
VGS = 0V
1.0
0.5
-75 -50 -25
0
0.0
25 50 75 100 125 150 175
Fig 7. Typical Threshold Voltage vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
T J = 25°C
C oss = C ds + C gd
150
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
250
200
0.2
VSD, Source-to-Drain Voltage (V)
T J , Temperature ( °C )
T J = 175°C
100
50
10000
Ciss
Coss
Crss
1000
V DS = 5.0V
380μs PULSE WIDTH
0
100
0
20
40
60
80
100
120
1
ID,Drain-to-Source Current (A)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
14.0
120
12.0
100
VDS= 32V
VDS= 20V
10.0
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
ID= 67A
VDS= 8.0V
8.0
6.0
4.0
80
60
40
20
2.0
0.0
0
0
20
40
60
80
100
120
140
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRL7736M2TR/TR1
300
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
ID
14A
37A
BOTTOM 67A
TOP
250
200
150
100
50
0
1
0
1
10
25
100
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.1
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
0.01
τC
τ2
τ1
τ2
τ3
τ3
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Ri (°C/W)
R4
R4
τ4
τ4
Ci= τi/Ri
Ci i/Ri
0.001
1E-006
τ
τi (sec)
0.07641
2.1e-05
0.36635
0.000737
0.94890
0.039150
1.00767
0.007321
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
Avalanche Current (A)
ID, Drain-to-Source Current (A)
1000
10
0.01
0.05
1
0.1
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
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AUIRL7736M2TR/TR1
EAR , Avalanche Energy (mJ)
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 67A
40
30
20
10
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 15)
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy vs. Temperature
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
- VDD
IAS
tp
A
0.01Ω
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
VCC
DUT
0
20K
1K
Vgs
S
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
Qgodr
RD
Qgd
Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
D.U.T.
VDS
+
-
V DD
90%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
VGS
td(on)
Fig 20a. Switching Time Test Circuit
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tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRL7736M2TR/TR1
DirectFET® Board Footprint, M4 (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
S
S
S
S
G
D
8
D
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AUIRL7736M2TR/TR1
DirectFET® Outline Dimension, M4 Outline (Medium Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
CODE MIN MAX
6.25 6.35
A
4.80 5.05
B
3.85 3.95
C
0.35 0.45
D
0.58 0.62
E
0.78 0.82
F
G
0.78 0.82
H
0.78 0.82
J
0.38 0.42
1.10 1.20
K
2.30 2.40
L
L1
3.50 3.60
0.68 0.74
M
P
0.09 0.17
R
0.02 0.08
IMPERIAL
MIN
MAX
0.246 0.250
0.189 0.201
0.152 0.156
0.014 0.018
0.023 0.024
0.031 0.032
0.031 0.032
0.031 0.032
0.015 0.017
0.043 0.047
0.090 0.094
0.138 0.142
0.027 0.029
0.003 0.007
0.001 0.003
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRL7736M2TR/TR1
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
F
H
F
C
D
E
A
B
A
C
B
D
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
G
H
G
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311 0.319
8.10
7.90
0.154 0.161
4.10
3.90
11.90 12.30 0.469 0.484
0.215 0.219
5.55
5.45
0.201 0.209
5.30
5.10
0.256 0.264
6.70
6.50
0.059
N.C
1.50
N.C
0.059 0.063
1.50
1.60
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRL7736M2TR). For 1000 parts on 7"
reel, order AUIRL7736M2TR1
STANDARD OPTION
METRIC
CODE
MIN
MAX
A
330.0
N.C
B
20.2
N.C
C
12.8
13.2
D
1.5
N.C
E
100.0
N.C
F
N.C
18.4
G
12.4
14.4
H
11.9
15.4
REEL DIMENSIONS
(QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
MIN
MIN
MAX
MIN
MAX
MAX
12.992
6.9
N.C
177.77 N.C
N.C
0.795
0.75
N.C
19.06
N.C
N.C
0.504
0.53
0.50
13.5
0.520
12.8
0.059
0.059
1.5
N.C
N.C
N.C
3.937
2.31
N.C
58.72
N.C
N.C
N.C
N.C
N.C
0.53
0.724
13.50
0.488
0.47
11.9
N.C
0.567
12.01
0.469
0.47
11.9
0.606
N.C
12.01
Starting TJ = 25°C, L = 0.030mH, RG = 50Ω, IAS = 67A,Vgs = 20V.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Repetitive rating; pulse width limited by max. junction temperature.
10
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AUIRL7736M2TR/TR1
IMPORTANT NOTICE
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
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unfair and deceptive business practice. IR is not responsible or liable for any such statements.
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in
automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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