TI1 ISO7820LLDWR High-performance, 8000-vpk reinforced isolated dual-lvds buffer Datasheet

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ISO7820LL, ISO7821LL
SLLSET8A – MARCH 2016 – REVISED AUGUST 2016
ISO782xLL High-Performance, 8000-VPK Reinforced Isolated Dual-LVDS Buffer
1 Features
2 Applications
•
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1
•
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Complies with TIA/EIA-644-A LVDS Standard
Signaling Rate: Up to 100 Mbps
Wide Supply Range: 2.25 V to 5.5 V
Wide Temperature Range: –55°C to +125°C
Ambient
Low Power Consumption, per Channel at 100
Mbps:
– Typical 9.3-mA (ISO7820LL)
– Typical 9.5-mA (ISO7821LL)
Low Propagation Delay: 17-ns Typical
Industry leading CMTI (min): ±100 kV/μs
Robust Electromagnetic Compatibility (EMC)
System-Level ESD, EFT, and Surge Immunity
Low Emissions
Isolation Barrier Life: > 40 Years
Wide Body and Extra-Wide Body SOIC-16
Package Options
Isolation Surge Withstand Voltage 12800 VPK
Safety-Related Certifications:
– 8000-VPK Reinforced Isolation per DIN V VDE
V 0884-10 (VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications are Planned
Motor Control
Test and Measurement
Industrial Automation
Medical Equipment
Communication Systems
3 Description
The ISO782xLL family of devices is a highperformance, isolated dual-LVDS buffer with 8000VPK isolation voltage. This device provides high
electromagnetic immunity and low emissions at lowpower consumption, while isolating the LVDS bus
signal. Each isolation channel has an LVDS receive
and transmit buffer separated by silicon dioxide
(SiO2) insulation barrier.
The ISO7820LL device has two forward-direction
channels. The ISO7821LL device has one forward
and one reverse-direction channel.
Through innovative chip design and layout
techniques, the electromagnetic compatibility of the
ISO782xLL family of devices has been significantly
enhanced to ease system-level ESD, EFT, surge, and
emission compliance.
The ISO782xLL family of devices is available in 16pin SOIC wide-body (DW) package and extra-wide
body (DWW) packages.
Device Information(1)
PART NUMBER
ISO7820LL
ISO7821LL
PACKAGE
BODY SIZE (NOM)
DW (16)
10.30 mm × 7.50 mm
DWW (16)
10.30 mm × 14.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VCCI
Isolation
Capacitor
VCCO
INx+
OUTx+
LVDS RX
LVDS TX
INx±
OUTx±
ENx
GNDI
GNDO
Copyright © 2016, Texas Instruments Incorporated
VCCI and GNDI are supply and ground connections respectively for the input channels.
VCCO and GNDO are supply and ground connections respectively for the output channels.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO7820LL, ISO7821LL
SLLSET8A – MARCH 2016 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
7
1
1
1
2
3
4
Absolute Maximum Ratings ..................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 5
Power Ratings........................................................... 5
Insulation Specifications............................................ 6
Safety-Related Certifications..................................... 7
Safety Limiting Values .............................................. 7
DC Electrical Characteristics .................................... 8
DC Supply Current Characteristics ......................... 9
Switching Characteristics ...................................... 11
Insulation Characteristics Curves ......................... 12
Typical Characteristics .......................................... 13
Parameter Measurement Information ................ 16
8
Detailed Description ............................................ 19
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
19
19
19
20
Application and Implementation ........................ 21
9.1 Application Information............................................ 21
9.2 Typical Application .................................................. 21
10 Power Supply Recommendations ..................... 25
11 Layout................................................................... 26
11.1 Layout Guidelines ................................................. 26
11.2 Layout Example .................................................... 26
12 Device and Documentation Support ................. 27
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
27
27
27
27
27
27
13 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (March 2016) to Revision A
•
2
Page
Changed the device status from Product Preview to Production Data and released full version of the data sheet .............. 1
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5 Pin Configuration and Functions
ISO7820LL DW and DWW Packages
16-Pin SOIC
Top View
ISO7821LL DW and DWW Packages
16-Pin SOIC
Top View
VCC1
1
16 VCC2
GND1 2
15 GND2
GND1
2
15 GND2
INA+
3
14 OUTA+
INA+
3
14 OUTA+
INA±
4
13 OUTA±
INA±
4
INB±
5
INB+
NC
12 OUTB±
OUTB± 5
6
11 OUTB+
OUTB+ 6
7
10
GND1 8
EN2
9 GND2
EN1
7
GND1
8
ISOLATION
16 VCC2
ISOLATION
1
VCC1
13 OUTA±
12
INB±
11
INB+
10
EN2
9 GND2
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
ISO7820LL
ISO7821LL
EN1
—
7
I
Output enable 1. Output pins on side 1 are enabled when EN1 is high or open and
in high impedance state when EN1 is low.
EN2
10
10
I
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and
in high impedance state when EN2 is low.
2
2
8
8
GND1
—
Ground connection for VCC1
—
Ground connection for VCC2
9
9
15
15
INA+
3
3
I
Positive differential input, channel A
INA–
4
4
I
Negative differential input, channel A
INB+
6
11
I
Positive differential input, channel B
INB–
5
12
I
Negative differential input, channel B
GND2
NC
7
—
—
Not connected
OUTA+
14
14
O
Positive differential output, channel A
OUTA–
13
13
O
Negative differential output, channel A
OUTB+
11
6
O
Positive differential output, channel B
OUTB–
12
5
O
Negative differential output, channel B
VCC1
1
1
—
Power supply, side 1, VCC1
VCC2
16
16
—
Power supply, side 2, VCC2
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VCCx
Supply voltage (2)
VCC1, VCC2
–0.5
6
V
V
Voltage on input, output, and
enable pins
OUTx, INx, ENx
–0.5
VCCx + 0.5 (3)
V
IO
Maximum current through OUTx pins
–20
20
mA
TJ
Junction temperature
–55
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±4500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
UNIT
V
±1500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
VCC1, VCC2
Supply voltage
|VID|
Magnitude of RX
input differential
voltage
VIC
RX input commonmode voltage
RL
TX far end differential termination
DR
Signaling rate
TA
Ambient temperature
4
Driven with voltage sources on
RX pins
MIN
NOM
MAX
2.25
3.3
5.5
V
600
mV
100
VCC1, VCC2 ≥ 3 V
0.5 |VID|
2.4 – 0.5 |VID|
VCC1, VCC2 < 3 V
0.5 |VID|
VCCx – 0.6 – 0.5 |VID|
100
0
–55
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25
UNIT
V
V
Ω
100
Mbps
125
°C
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6.4 Thermal Information
THERMAL METRIC
ISO7820LL
ISO7821LL
(1)
DW (SOIC)
DWW (SOIC)
16 PINS
16 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
82
84.6
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
44.6
46.4
°C/W
RθJB
Junction-to-board thermal resistance
46.6
55.3
°C/W
ψJT
Junction-to-top characterization parameter
17.8
18.7
°C/W
ψJB
Junction-to-board characterization parameter
46.1
54.5
°C/W
RθJC(bottom)
Junction-to-case(bottom) thermal resistance
—
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Power Ratings
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 5 pF, input a 50-MHz 50% duty-cycle square wave, EN1 = EN2 = 5.5 V,
RL = 100-Ω differential
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ISO7821LL
PD
Maximum power dissipation (both sides)
156
mW
PD1
Maximum power dissipation (side 1)
78
mW
PD2
Maximum power dissipation (side 2)
78
mW
ISO7820LL
PD
Maximum power dissipation (both sides)
152
mW
PD1
Maximum power dissipation (side 1)
36
mW
PD2
Maximum power dissipation (side 2)
116
mW
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6.6 Insulation Specifications
over operating free-air temperature range (unless otherwise noted) (1)
PARAMETER
SPECIFICATION
TEST CONDITIONS
DW
DWW
UNIT
GENERAL
External clearance (1)
Shortest terminal-to-terminal distance through air
>8
>14.5
mm
CPG
External creepage (1)
Shortest terminal-to-terminal distance across the package
surface
>8
>14.5
mm
DTI
Distance through the
insulation
Minimum internal gap (internal clearance)
>21
>21
μm
CTI
Tracking resistance
(comparative tracking index)
DIN EN 60112 (VDE 0303–11); IEC 60112; UL 746A
>600
>600
V
Material group
According to IEC 60664-1
CLR
I
I
I–IV
I–IV
I–III
I–IV
AC voltage (bipolar)
2121
2828
VPK
AC voltage (sine wave); time dependent dielectric
breakdown (TDDB) test; see Figure 1 and Figure 2
1500
2000
VRMS
DC voltage
2121
2828
VDC
Overvoltage category per IEC Rated mains voltage ≤ 600 VRMS
60664-1
Rated mains voltage ≤ 1000 VRMS
DIN V VDE V 0884–10 (VDE V 0884–10):2006–12 (2)
VIORM
Maximum repetitive peak
isolation voltage
VIOWM
Maximum isolation working
voltage
VIOTM
Maximum transient isolation
voltage
VTEST = VIOTM
t = 60 s (qualification)
t = 1 s (100% production)
8000
8000
VPK
VIOSM
Maximum surge isolation
voltage (3)
Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)
8000
8000
VPK
Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 2545 VPK (DW) and
3394 VPK (DWW), tm = 10 s
≤5
≤5
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 × VIORM = 3394 VPK (DW) and
4525 VPK (DWW), tm = 10 s
≤5
≤5
Method b1: At routine test (100% production) and
preconditioning (type test)
Vini = VIORM, tini = 1 s;
Vpd(m) = 1.875 × VIORM= 3977 VPK (DW) and
5303 VPK (DWW), tm = 1 s
≤5
≤5
~0.7
~0.7
Apparent charge (4)
qpd
Barrier capacitance, input to
output (5)
CIO
Isolation resistance, input to
output (5)
RIO
VIO = 0.4 × sin (2πft), f = 1 MHz
12
pC
VIO = 500 V, TA = 25°C
>10
>10
VIO = 500 V, 100°C ≤ TA ≤ 125°C
>1011
>1011
9
9
VIO = 500 V at TS = 150°C
>10
pF
12
Ω
>10
Pollution degree
2
2
Climatic category
55/125/21
55/125/21
5700
5700
UL 1577
VISO
(1)
(2)
(3)
(4)
(5)
6
VTEST = VISO = 5700 VRMS, t = 60 s (qualification);
Withstanding isolation voltage VTEST = 1.2 × VISO = 6840 VRMS,
t = 1 s (100% production)
VRMS
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by
means of suitable protective circuits.
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
Apparent charge is electrical discharge caused by a partial discharge (pd).
All pins on each side of the barrier tied together creating a two-terminal device.
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6.7 Safety-Related Certifications
VDE
CSA
Plan to certify according to
DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
and DIN EN 60950-1 (VDE
0805 Teil 1):2011-01
UL
Plan to certify under CSA
Component Acceptance
Notice 5A, IEC 60950-1 and
IEC 60601-1
Plan to certify according
to UL 1577 Component
Recognition Program
CQC
TUV
Plan to certify according to
GB 4943.1-2011
Reinforced insulation per CSA
60950-1-07+A1+A2 and IEC
60950-1 2nd Ed., 800 VRMS
Reinforced insulation
(DW package) and 1450 VRMS
Maximum transient
isolation voltage, 8000 VPK; (DWW package) max working
voltage (pollution degree 2,
Maximum repetitive peak
Single protection,
isolation voltage, 2121 VPK material group I);
5700 VRMS
(DW), 2828 VPK (DWW);
2 MOPP (Means of Patient
Maximum surge isolation
Protection) per CSA 60601voltage, 8000 VPK
1:14 and IEC 60601-1 Ed. 3.1,
250 VRMS (354 VPK) max
working voltage (DW package)
Reinforced Insulation,
Altitude ≤ 5000 m, Tropical
Climate, 250 VRMS
maximum working voltage
Certification planned
Certification planned
Certification planned
Certification planned
Plan to certify according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to
working voltage of 600 VRMS (DW
package) and 1000 VRMS (DWW
package)
5700 VRMS Reinforced insulation per
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working
voltage of 800 VRMS (DW package) and
1450 VRMS (DWW package)
Certification planned
6.8 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DW PACKAGE
IS
Safety input, output, or supply
current
PS
Safety input, output, or total
power
TS
Maximum safety temperature
RθJA = 82°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 3
277
RθJA = 82°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 3
423
RθJA = 82°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 3
554
RθJA = 82°C/W, TJ = 150°C, TA = 25°C,
see Figure 5
mA
1524
mW
150
°C
DWW PACKAGE
IS
Safety input, output, or supply
current
PS
Safety input, output, or total
power
TS
Maximum safety temperature
RθJA = 84.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 4
269
RθJA = 84.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 4
410
RθJA = 84.6°C/W, VI = 2.75 V, TJ = 150°C, TA =
25°C,
see Figure 4
537
RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C,
see Figure 6
mA
1478
mW
150
°C
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information is that of a
device installed on a High-K test board for leaded surface-mount packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
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6.9 DC Electrical Characteristics
(over recommended operating conditions unless otherwise noted)
PARAMETER
IIN(EN)
Leakage Current on ENx
pins
VCC+(UVLO)
Positive-going
undervoltage-lockout
(UVLO) threshold
VCC–(UVLO)
Negative-going UVLO
threshold
VHYS(UVLO)
UVLO threshold hysteresis
VEN(ON)
EN pin turn-on threshold
VEN(OFF)
EN pin turn-off threshold
VEN(HYS)
EN pin threshold hysteresis
TEST CONDITIONS
MIN
Internal pullup on ENx pins
TYP
MAX
13
40
μA
2.25
V
1.7
UNIT
V
0.2
V
0.7 VCCx
0.3 VCCx
V
V
0.1 VCCx
V
(1)
Common-mode transient
immunity
VI = VCCI or 0 V;
VCM = 1000 V; see Figure 25
100
120
|VOD|
TX DC output differential
voltage
RL = 100 Ω, See Figure 26
250
350
450
mV
∆VOD
Change in TX DC output
differential between logic 1
and 0 states
RL = 100 Ω, see Figure 26
–10
0
10
mV
VOC
TX DC output common
mode voltage
RL = 100 Ω, see Figure 26
1.125
1.2
1.375
∆VOC
TX DC common mode
voltage difference
RL = 100 Ω, see Figure 26
–25
0
25
IOS
TX output short circuit
current through OUTx
IOZ
TX output current when in
high impedance
CMTI
kV/μs
LVDS TX
TX output pad capacitance
on OUTx at 1 MHz
COUT
OUTx = 0
10
OUTxP = OUTxM
10
ENx = 0, OUTx from 0 to VCC
–5
5
DW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz
10
DWW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz
10
V
mV
mA
µA
pF
LVDS RX
VCC1, VCC2 ≥ 3 V
0.5 |VID|
1.2
2.4 – 0.5 |VID|
VCC1, VCC2 < 3 V
0.5 |VID|
1.2
VCCx – 0.6 – 0.5 |VID|
VIC
RX input common mode
voltage
VIT1
Positive going RX input
differential threshold
Across VIC
VIT2
Negative going RX input
differential threshold
Across VIC
IINx
Input current on INx
From 0 to VCCx (each input
independently)
IINxP – IINxM
Input current balance
From 0 to VCCx
CIN
RX input pad capacitance
on INx at 1 MHz
(1)
8
50
–50
V
mV
mV
10
–6
DW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz
6.6
DWW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz
7.5
20
µA
6
µA
pF
VCCI = Input-side VCCx; VCCO = Output-side VCCx.
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6.10 DC Supply Current Characteristics
(over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
ISO7821LL
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
2.2
3.3
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
3.4
5.1
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV
6.1
9.2
7.4
11.1
6.7
10.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
7.4
11.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
8.3
12.5
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
2.2
3.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
3.5
5.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV
6.4
9.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
7.8
11.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
7.1
10.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
8.1
12.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
9.5
14.1
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
2.7
4.3
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
5.3
7.9
EN1 = EN2 = 1, RL = 100-Ω differential, VID≥ 50 mV
2.7
4.2
5.2
8
4
6.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
4.1
6.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
4.3
6.4
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
2.8
4.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
5.5
8.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV
2.9
4.5
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
5.5
8.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
4.2
6.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
4.3
6.4
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
4.5
6.6
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
2.25 V < VCC1,
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
VCC2 < 3.6 V
1 Mbps
ICC1
ICC2
Supply current
side 1 and side 2
4.5 V < VCC1,
VCC2 < 5.5 V
mA
ISO7820LL
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
2.25 V < VCC1,
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
VCC2 < 3.6 V
1 Mbps
ICC1
Supply current
side 1
4.5 V < VCC1,
VCC2 < 5.5 V
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DC Supply Current Characteristics (continued)
(over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
ISO7820LL (continued)
ICC2
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
1.1
1.7
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
1.1
1.7
VID≥ 50 mV
9.1
13.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
9.2
13.9
2.25 V < VCC1,
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
VCC2 < 3.6 V
1 Mbps
9.2
13.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
10.3
15.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
12.1
17.9
EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV
1.2
1.8
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV
1.2
1.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV
9.7
14.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV
9.7
14.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps
9.7
14.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps
11.5
17.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps
14.2
21
Supply current
side 2
4.5 V < VCC1,
VCC2 < 5.5 V
10
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6.11 Switching Characteristics
(over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
17
25
ns
0
4.5
ns
LVDS CHANNEL
tPLH
tPHL
Propagation delay time
PWD
Pulse width distortion |tPHL – tPLH|
tsk(o)
Channel-to-channel output skew time
Same directional channels, same
voltage and temperature
2.5
ns
tsk(pp)
Part-part skew
Same directional channels, same
voltage and temperature
4.5
ns
tCMset
Common-mode settling time after
EN = 0 to EN = 1 transition.
Common-mode capacitive
load = 100 pF to 0.5 nF
20
µs
tfs
Default output delay time from input
power loss
Measured from the time VCC goes
below 1.7 V, see Figure 24
9
µs
tie
Time interval error, or peak-to-peak jitter
216 – 1 PRBS data at 100 Mbps;
RX VID = 350 mVPP, 1 ns trf 10% to
90%, TA = 25°C, VCC1, VCC2 = 3.3 V
0.2
1
ns
LVDS TX AND RX
trf
TX differential rise/fall times (20% to
80%)
∆VOC(pp)
TX common-mode voltage peak-to-peak
at 100 Mbps
tPLZ, tPHZ TX disable time—valid output to HiZ
See Figure 22
300
780
1380
ps
0
150
mVPP
See Figure 23
10
20
ns
tPZH
Enable propagation delay, high
impedance-to-high output
See Figure 23
10
20
ns
tPZL
Enable propagation delay, high
impedance-to-low output
See Figure 23
2
2.5
μs
|VID|
Driven with voltage sources on RX
Magnitude of RX input differential voltage
pins, see the figures in the Parameter
for valid operation
Measurement Information section
600
mV
trf(RX)
Allowed RX input differential rise and fall
times (20% to 80%)
0.3 × UI (1)
ns
(1)
See Figure 27
100
1
UI is the unit interval.
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6.12 Insulation Characteristics Curves
1.E+11
87.5%
1.E+9
1.E+9
1.E+8
1.E+8
1.E+7
1.E+6
1.E+5
Safety Margin Zone: 2400 VRMS, 63 Years
Operating Zone: 2000 VRMS, 34 Years
TDDB Line (<1 PPM Fail Rate)
1.E+10
Time to Fail (s)
Time to Fail (s)
1.E+10
1.E+11
Safety Margin Zone: 1800 VRMS, 254 Years
Operating Zone: 1500 VRMS, 135 Years
TDDB Line (<1 PPM Fail Rate)
87.5%
1.E+7
1.E+6
1.E+5
1.E+4
1.E+4
1.E+3
1.E+3
20%
1.E+2
1.E+2
1.E+1
500
1.E+1
400
20%
1500 2500 3500 4500 5500 6500 7500 8500 9500
Stress Voltage (VRMS)
TA upto 150°C
Operating lifetime = 135 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 1500 VRMS
TA upto 150°C
Figure 1. Reinforced Isolation Capacitor Lifetime Projection
for Devices in DW Package
Operating lifetime = 34 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 2000 VRMS
Figure 2. Reinforced Isolation Capacitor Lifetime Projection
for Devices in DWW Package
600
600
VCCx = 2.75 V
VCCx = 3.6 V
VCCx at 5.5 V
500
Safety Limiting Current (mA)
Safety Limiting Current (mA)
1400 2400 3400 4400 5400 6400 7400 8400 9400
Stress Voltage (VRMS)
400
300
200
100
0
VCCx = 2.75 V
VCCx = 3.6 V
VCCx = 5.5 V
500
400
300
200
100
0
0
50
100
150
Ambient Temperature (qC)
200
0
50
100
150
Ambient Temperature (qC)
D006
Figure 4. Thermal Derating Curve for Limiting Current for
DWW Package
1800
1600
Power
1600
1400
Safety Limiting Power (mW)
Safety Limiting Power (mW)
D008
Figure 3. Thermal Derating Curve for Limiting Current for
DW Package
Power
1400
1200
1000
800
600
400
1200
1000
800
600
400
200
200
0
0
0
50
100
150
Ambient Temperature (qC)
200
0
D007
Figure 5. Thermal Derating Curve for Limiting Power for DW
Package
12
200
50
100
150
Ambient Temperature (qC)
200
D009
Figure 6. Thermal Derating Curve for Limiting Power for
DWW Package
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10
10
8
8
Supply Current (mA)
Supply Current (mA)
6.13 Typical Characteristics
6
4
ICC1 at 2.5 V (mA)
ICC2 at 2.5 V (mA)
ICC1 at 3.3 V (mA)
ICC2 at 3.3 V (mA)
ICC1 at 5 V (mA)
ICC2 at 5 V (mA)
2
4
ICC1 at 2.5 V (mA)
ICC2 at 2.5 V (mA)
ICC1 at 3.3 V (mA)
ICC2 at 3.3 V (mA)
ICC1 at 5 V (mA)
ICC2 at 5 V (mA)
2
0
0
0
25
50
Data Rate (Mbps)
TA = 25°C
75
100
0
25
50
Data Rate (Mbps)
D001
CH-A toggle
TA = 25°C
75
D002
CH-B toggle
Figure 7. ISO7821LL Supply Current vs Data Rate (CH-A)
Figure 8. ISO7821LL Supply Current vs Data Rate (CH-B)
10
8
8
6
4
6
4
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
2
2
ICC1, ICC2 at 1 Mbps
ICC1, ICC2 at 100 Mbps
0
2.25
2.75
3.25
3.75
4.25
4.75
VCCx Output Supply Voltage (V)
0
-55
5.25
-15
5
25
45
65
Temperature (qC)
Data rate = 100 Mbps
Figure 9. ISO7821LL Supply Current vs VCCx Output Supply
Voltage
85
105
125
D004
CH-A toggle
Figure 10. ISO7821LL Supply Current vs Temperature
(CH-A)
10
16
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
Supply Current (mA)
8
6
4
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
2
0
-55
-35
D003
TA = 25°C
Supply Current (mA)
100
10
Supply Current (mA)
Supply Current (mA)
6
12
8
4
0
-35
-15
5
Data rate = 100 Mbps
25
45
65
Temperature (qC)
85
105
125
0
25
D005
CH-B toggle
Figure 11. ISO7821LL Supply Current vs Temperature
(CH-B)
TA = 25°C
50
Data Rate (Mbps)
75
100
D020
CH-A toggle
Figure 12. ISO7820LL Supply Current vs Data Rate
(CH-A)
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Typical Characteristics (continued)
16
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
12
Supply Current (mA)
Supply Current (mA)
16
8
4
0
0
25
50
Data Rate (Mbps)
TA = 25°C
75
CH-B toggle
12
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
8
4
5
Data rate = 100 Mbps
25
45
65
Temperature (qC)
85
105
4
CH-A toggle
Propagation Delay Time (ns)
14
14
13
12
11
tPLH at 2.5 V
tPHL at 2.5 V
tPLH at 3.3 V
tPHL at 3.3 V
tPLH at 5 V
tPHL at 5 V
10
9
25
45
65
Temperature (qC)
5
85
105
25
45
65
Temperature (qC)
85
105
125
D010
CH-B toggle
Figure 16. ISO7820LL Supply Current vs Temperature
(CH-B)
15
5
-15
Data rate = 100 Mbps
15
-15
-35
D023
16
-35
D022
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 5 V
8
0
-55
125
Figure 15. ISO7820LL Supply Current vs Temperature
(CH-A)
8
-55
5.25
Figure 14. ISO7820LL Supply Current vs VCCx Output Supply
Voltage
12
-15
3.25
3.75
4.25
4.75
VCCx Output Supply Voltage (V)
TA = 25°C
16
-35
2.75
D021
Supply Current (mA)
Supply Current (mA)
4
16
0
-55
ICC1 at 1 Mbps
ICC1 at 100 Mbps
ICC2 at 1 Mbps
ICC2 at 100 Mbps
8
0
2.25
100
Figure 13. ISO7820LL Supply Current vs Data Rate
(CH-B)
Propagation Delay Time (ns)
12
tPLH
tPHL
13
12
11
10
9
125
8
2.25
2.75
D012
3.25
3.75
4.25
4.75
VCCx Output Supply Voltage (V)
5.25
D013
TA = 25°C
Figure 17. Propagation Delay Time vs Temperature
14
Figure 18. Propagation Delay Time vs VCCx Output Supply
Voltage
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Typical Characteristics (continued)
15
3
Output Voltage (V)
VOUT+
VOC
VOUT
2
VI
1
0
2.25
VOD
2.75
3.25
3.75
4.25
4.75
VCCx Output Supply Voltage (V)
5.25
D023
D014
TA = 25°C
Figure 19. Output Voltage vs VCCx Output Supply Voltage
Figure 20. Disable to Enable Time (tPZH, tPZL)
15
VI
VOD
D023
Figure 21. Disable Time (tPLZ, tPHZ)
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7 Parameter Measurement Information
VCCI
Isolation Capacitor
INx+
100
Signal
V
Generator ID
CP
VCCO
LVDS RX
INx±
VID(H)
OUTx+
50%
VID
VID(L)
RL
LVDS TX
OUTx±
50%
VOD
tPLH
CP
tPHL
VOD
GNDI
GNDO
VOD(H)
80%
50%
50%
20%
VOD(L)
tf
tr
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3
ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CP = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 22. Switching Characteristics Test Circuit and Voltage Waveforms
VCCI
Isolation Capacitor
VCCO
INx+
LVDS RX
VID 100
VID ” ±50 mV
INx±
OUTx+
LVDS TX
RL
CL VOD
VCCO
tPZL
EN
GNDI
VCCO / 2
VCCO / 2
VI
OUTx±
0V
tPLZ
0V
GNDO
50%
50%
VOD
VOD(L)
Signal
Generator
VI
50
VCCI
Isolation Capacitor
VCCO
INx+
LVDS RX
VID 100
VID • 50 mV
INx±
OUTx+
LVDS TX
RL
VCCO
CL VOD
0V
tPZH
EN
GNDI
VOD(H)
GNDO
VOD
Signal
Generator
VCCO / 2
VCCO / 2
VI
OUTx±
50%
50%
tPHZ
VI
0V
50
A.
The input pulse is supplied by a generator having the following characteristics: PRR ≤ 10 kHz, 50% duty cycle,
tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 23. Enable and Disable Propagation Delay Time Test Circuit and Waveform
16
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Parameter Measurement Information (continued)
VI
Isolation Capacitor
INx+
LVDS RX
VID 100
VID ” ±50 mV
VCCI
VCCO
VCCI
INx±
1.7 V
VI
OUTx+
0V
LVDS TX
CL VOD
RL
tfs
OUTx±
VOD(H)
50%
VOD
VOD(L)
GNDI
A.
GNDO
CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 24. Default Output Delay Time Test Circuit and Voltage Waveforms
VCCI
Isolation Capacitor
VCCO
INx+
S1
VID
LVDS RX
100
S2
INx±
GNDI
A.
+
VCM
OUTx+
LVDS TX
CL VOD
RL
OUTx±
±
GNDO
CL = 5 pF and includes instrumentation and fixture capacitance within ±20%.
Figure 25. Common-Mode Transient Immunity Test Circuit
VCCI
100
LVDS RX
INx±
GNDI
Isolation Capacitor
INx+
VCCO
RL / 2
OUTx+
LVDS TX
V
V
OUTx±
RL / 2
VOC
VOD
GNDO
= Measured Parameter
Figure 26. Driver Test Circuit
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Parameter Measurement Information (continued)
VCCI
Isolation Capacitor
VCCO
INx+
LVDS RX
VID
INx±
VIN+
VIN±
GNDI
OUTx+
LVDS TX
VOD
OUTx±
VOUT+
VOUT±
GNDO
1.375 V
VIN+
1.025 V
VIN±
U
I
VID
VID(H), 0.35 V
0V
VID(L), ±0.35 V
tPHL
tPLH
VOD(H)
VOD
80%
50%
20%
tf
VOD(L)
tr
Figure 27. Voltage Definitions and Waveforms
18
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8 Detailed Description
8.1 Overview
The ISO782xLL is a family of isolated LVDS buffers. The differential signal received on the LVDS input pins is
first converted to CMOS logic levels. The signal is then transmitted across a silicon-dioxide (SiO2) based
capacitive-isolation barrier using an on-off keying (OOK) modulation scheme. A high frequency carrier
transmitted across the barrier represents one logic state and an absence of a carrier represents the other logic
state. On the other side of the barrier a demodulator converts the OOK signal back to logic levels, which is then
converted to LVDS outputs by a differential driver. These devices incorporate advanced circuit techniques to
maximize CMTI performance and minimize radiated emissions.
The ISO782xLL family of devices is TIA/EIA-644-A standard compliant. The LVDS transmitters drive a minimum
differential-output voltage magnitude of 250 mV into a 100-Ω load, and the LVDS receivers are capable of
detecting differential signals ≥50 mV in magnitude. The device consumes 10 mA per channel at 100 Mbps with
5-V supplies.
The Functional Block Diagram section shows a conceptual block diagram of one channel of the ISO782xLL
family of devices.
8.2 Functional Block Diagram
Transmitter
Receiver
TX Signal
Conditioning
OOK
modulation
IN+
LVDS
RX
IN±
Oscillator
RX Signal
Conditioning
EN
SiO2
based
Capacitive
Isolation
Barrier
OUT+
Preamplifier
Envelope
Detector
LVDS
TX
OUT±
Emissions
Reduction
Techniques
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8.3 Feature Description
The ISO782xLL family of devices is available in two channel configurations with a default differential high-output
state.
(1)
PART
NUMBER
CHANNEL DIRECTION
ISO7820LL
2 Forward
ISO7821LL
1 Forward, 1 Reverse
RATED ISOLATION
5700 VRMS / 8000 VPK
(1)
MAXIMUM DATA RATE
DEFAULT DIFFERENTIAL
OUTPUT
100 Mbps
High
See the Safety-Related Certifications section for detailed isolation ratings.
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8.4 Device Functional Modes
Table 1 lists the functional modes for the ISO782xLL family of devices.
Table 1. ISO782xLL Function Table (1)
VCCI
VCCO
PU
PU
X
(1)
(2)
(3)
INPUT
(INx±) (2)
OUTPUT ENABLE
(ENx)
OUTPUT
(OUTx±) (3)
H
H or open
H
L
H or open
L
I
H or open
H or L
X
L
Z
A low-logic state at the output enable causes the outputs to be in high
impedance.
Default mode: When VCCI is unpowered, a channel output assumes
the logic high state.
When VCCI transitions from unpowered to powered up, a channel
output assumes the logic state of the input.
When VCCI transitions from powered up to unpowered, a channel
output assumes the selected default high state.
PU
COMMENTS
Normal Operation:
A channel output assumes the logic state of the input.
PD
PU
X
H or open
H
X
PD
X
X
Undetermined
When VCCO is unpowered, a channel output is undetermined.
When VCCO transitions from unpowered to powered-up, a channel
output assumes the logic state of the input
VCCI = input-side VCC; VCCO = output-side VCC; PU = powered up (VCCx ≥ 2.25 V); PD = powered down (VCCx ≤ 1.7 V); X = irrelevant
Input (INx±): H = high level (VID ≥ 50 mV); L = low level (VID ≤ –50 mV); I = indeterminate (–50 mV < VID < 50 mV)
Output (OUTx±): H = high level (VOD ≥ 250 mV); L = low level (VOD ≤ –250 mV); Z = high impedance.
8.4.1 Device I/O Schematics
LVDS Input
LVDS Output
VCC
600 k
600 k
VCC
INx+
INx±
20
20 k
OUTx
Enable
VCC
275 k
ENx
1k
Figure 28. Device I/O Schematics
20
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO782xLL is a family of high-performance, reinforced isolated dual-LVDS buffers. Isolation can be used to
help achieve human and system safety, to overcome ground potential difference (GPD), or to improve noise
immunity and system performance.
The LVDS signaling can be used over most interfaces to achieve higher data rates because the LVDS is only a
physical layer. LVDS can also be used for a proprietary communication scheme implemented between a host
controller and a slave. Example use cases include connecting a high-speed I/O module to a host controller, a
subsystem connecting to a backplane, and connection between two high-speed subsystems. Many of these
systems operate under harsh environments making them susceptible to electromagnetic interferences, voltage
surges, electrical fast transients (EFT), and other disturbances. These systems must also meet strict limits on
radiated emissions. Using isolation in combination with a robust low-noise signaling standard such as LVDS,
achieves both high immunity to noise and low emissions.
Example end applications that could benefit from the ISO782xLL family of devices include high-voltage motor
control, test and measurement, industrial automation, and medical equipment.
9.2 Typical Application
One application for isolated LVDS buffers is for point-to-point communication between two high-speed capable,
application-specific integrated circuits (ASICs) or FPGAs. In a high-voltage motor control application, for
example, Node 1 could be a controller on a low-voltage or earth referenced board, and Node 2, could be
controller placed on the power board, biased to high voltage. Figure 29 and Figure 30 show the application
schematics.
Figure 30 provides further details of using the ISO782xLL family of devices to isolate the LVDS interface. The
LVDS connection to the ISO782xLL family of devices can be traces on a board (shown as straight lines between
Node 1 and the ISO782xLL device), a twisted pair cable (as shown between Node 2 and the ISO782xLL device),
or any other controlled impedance channel. Differential 100-Ω terminations are placed near each LVDS receiver.
The characteristic impedance of the channel should also be 100-Ω differential.
In the example shown in Figure 29 and Figure 30, the ISO782xLL family of devices provides reinforced or safety
isolation between the high-voltage elements of the motor drive and the low-voltage control circuitry. This
configuration also ensures reliable communication, regardless of the high conducted and radiated noise present
in the system.
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Typical Application (continued)
Isolated IGBT
Gate Drivers
Rectifier Diodes
IGBT Module
DC+
DC±
Drive
Output
Power
Input
M
DC±
PWM
Signals
DC±
ISO782xLL
Node 2
Node 1
DC±
DC±
Isolated Current
and Voltage Sense
DC±
Communication Bus
RS-485, CAN,
Ethernet
Encoder
High Voltage Motor Drive
Copyright © 2016, Texas Instruments Incorporated
Isolation Barrier
Figure 29. Isolated LVDS Interface in Motor Control Application
VCC1
0.1 F
3.3 V
1
Vcc1
7
EN1
3
Node 1
100 Ÿ
ASIC or FPGA
100 Ÿ
VCC2
0.1 F
3.3 V
16
Vcc2
EN2
10
14
INA+
OUTA+
ISO7821LL
13
INA±
OUTA±
5
INB± 12
OUTB±
6
INB+ 11
OUTB+
100 Ÿ
4
GND1
2, 8
Node 2
ASIC or FPGA
100 Ÿ
GND2
9, 15
Copyright © 2016, Texas Instruments Incorporated
Figure 30. Isolated LVDS Interface Between Two Nodes (ASIC or FPGA)
22
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Typical Application (continued)
9.2.1 Design Requirements
For the ISO782xLL family of devices, use the parameters listed in Table 2.
Table 2. Design Parameters
PARAMETER
VALUE
Supply voltage range, VCC1 and VCC2
2.25 V to 5.5 V
For VCCx ≥ 3 V: 0.5 |VID| to 2.4 – 0.5 |VID|
Receiver common-mode voltage range
For VCCx < 3 V: 0.5 |VID| to VCCx – 0.6 – 0.5 |VID|
External termination resistance
100 Ω
Interconnect differential characteristic impedance
100 Ω
Signaling rate
0 to 100 Mbps
Decoupling capacitor from VCC1 and GND1
0.1 µF
Decoupling capacitor from VCC2 and GND2
0.1 µF
9.2.2 Detailed Design Procedure
The ISO782xLL family of devices has minimum requirements on external components for correct operation.
External bypass capacitors (0.1 µF) are required for both supplies (VCC1 and VCC2). A termination resistor with a
value of 100 Ω is required between each differential input pair (INx+ and INx–), with the resistors placed as close
to the device pins as possible. A differential termination resistor with a value of 100 Ω is required on the far end
for the LVDS transmitters. Figure 31 and Figure 32 show these connections.
VCC2
VCC1
1
16
0.1 F
0.1 F
GND2
GND1
2
15
3
14
INA+
LVDS
RX
INA±
4
INB±
5
100
LVDS
RX
INB+
Isolation Capacitor
100
OUTA+
LVDS
TX
OUTA±
13
OUTB±
12
LVDS
TX
OUTB+
6
11
7
10
8
9
EN2
NC
GND1
GND2
Figure 31. Typical ISO7820LL Circuit Hook-Up
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VCC2
VCC1
1
16
0.1 F
0.1 F
GND2
GND1
2
15
3
14
INA+
LVDS
RX
INA±
4
OUTB±
5
LVDS
TX
OUTB+
Isolation Capacitor
100
OUTA+
LVDS
TX
OUTA±
13
INB±
12
LVDS
RX
INB+
6
11
7
10
8
9
100
EN2
EN1
GND1
GND2
Figure 32. Typical ISO7821LL Circuit Hook-Up
9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the
ISO782xLL family of devices incorporates many chip-level design improvements for overall system robustness.
Some of these improvements include:
• Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
• Low-resistance connectivity of ESD cells to supply and ground pins.
• Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
• Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
• PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
• Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
24
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9.2.3 Application Curve
Figure 33 shows a typical eye diagram of the ISO782xLL family of devices which indicates low jitter and a wideopen eye at the maximum data rate of 100 Mbps.
Figure 33. Eye Diagram at 100 Mbps PRBS, 3.3 V and 25°C
10 Power Supply Recommendations
To help ensure reliable operation at data rates and supply voltages, a 0.1-μF bypass capacitor is recommended
at the input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins
as possible. If only a single primary-side power supply is available in an application, isolated power can be
generated for the secondary-side with the help of a transformer driver such as Texas Instruments' SN6501 or
SN6505. For such applications, detailed power supply design and transformer selection recommendations are
available in the following data sheets: SN6501 Transformer Driver for Isolated Power Supplies (SLLSEA0) and
SN6505 Low-Noise 1-A Transformer Drivers for Isolated Power Supplies (SLLSEP9).
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11 Layout
11.1 Layout Guidelines
A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 34). Layer stacking should
be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency
signal layer.
• Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
• Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
• Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/in2.
• Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
• While routing differential traces on a board, TI recommends that the distance between two differential pairs be
much higher (at least 2x) than the distance between the traces in a differential pair. This distance minimizes
crosstalk between the two differential pairs.
If an additional supply voltage plane or signal layer is needed, add a second power or ground plane system to
the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the
power and ground plane of each power system can be placed closer together, thus increasing the high-frequency
bypass capacitance significantly.
The ISO782xLL family of devices requires no special layout considerations to mitigate electromagnetic
emissions.
For detailed layout recommendations, see the Digital Isolator Design Guide (SLLA284).
11.1.1 PCB Material
For digital circuit boards operating at less than 150 Mbps (or rise and fall times higher than 1 ns) and trace
lengths of up to 10 inches, use standard FR–4 UL94V-0 epoxy-glass as PCB material. ThisPCB is preferred over
cheaper alternatives because of lower dielectric losses at high frequencies, less moisture absorption, greater
strength and stiffness, and self-extinguishing flammability-characteristics.
11.2 Layout Example
High-speed traces
10 mils
Ground plane
40 mils
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
0r ~ 4.5
Power plane
10 mils
Low-speed traces
Figure 34. Layout Example
26
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• Digital Isolator Design Guide (SLLA284)
• ISO782xLLx Isolated Dual LVDS Buffer Evaluation Module (SLLU240)
• Isolation Glossary (SLLA353)
• LVDS Owner’s Manual (SNLA187)
• SN6501 Transformer Driver for Isolated Power Supplies (SLLSEA0)
• SN6505 Low-Noise 1-A Transformer Drivers for Isolated Power Supplies (SLLSEP9)
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates — go to the product folder for your device on ti.com. In the
upper right-hand corner, click the Alert me button to register and receive a weekly digest of product information
that has changed (if any). For change details, check the revision history of any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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27
PACKAGE OPTION ADDENDUM
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19-Apr-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
ISO7820LLDW
PREVIEW
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820LL
ISO7820LLDWR
PREVIEW
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7820LL
ISO7821LLDW
PREVIEW
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821LL
ISO7821LLDWR
PREVIEW
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-55 to 125
ISO7821LL
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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19-Apr-2016
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
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