DMP6185SEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits -60V ID TA = +25°C RDS(on) 150mΩ @ VGS= -10V -3A 185mΩ @ VGS= -4.5V -2.7A 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance Fast switching speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control Transformer Driving Switch DC-DC Converters Power Management Functions Uninterrupted Power Supply Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMP6185SEQ-13 Notes: Case SOT223 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW P6185 DMP6185SEQ Document Number DS39536 Rev. 1 - 2 = Manufacturer’s Marking P6185 = Marking Code YWW or YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) WW = Week (01 - 53) 1 of 6 www.diodes.com February 2017 © Diodes Incorporated DMP6185SEQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source voltage VDSS -60 V Gate-Source voltage VGS 20 V Continuous Drain current (Note 7) VGS = -10V TA = +25°C -3 ID TA = +70°C A -2.4 IS -2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A Single Pulsed Avalanche Current (Note 8) IAS -16 A EAS 13 mJ Maximum Body Diode Continuous Current Single Pulsed Avalanche Energy (Note 8) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics Value 1.2 0.8 104 51 2.2 1.4 60 30 7.6 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1 RDS (ON) mΩ VSD -3 150 185 -0.95 V Static Drain-Source On-Resistance 110 130 -0.75 VDS = VGS, ID = -250μA VGS = -10V, ID = -2.2A VGS = -4.5V, ID = -1.8A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 708 39 32 17 6.2 14 2.8 3.1 5.2 23 33 39 22 17 28 pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -12A VDS = -30V, RL = 2.5Ω VGS = -10V, RG = 3Ω IF = -12A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. UIS in production with L = 0.1mH, starting TA = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP6185SEQ Document Number DS39536 Rev. 1 - 2 2 of 6 www.diodes.com February 2017 © Diodes Incorporated DMP6185SEQ 20 20.0 VDS = -5.0V VGS = -8V 18.0 18 VGS = -2.5V 14.0 VGS = -2.0V 12.0 10.0 VGS = -1.8V 8.0 6.0 2.0 12 10 8 6 1 2 3 4 -V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0.12 0.11 0.1 0.09 0.08 0.07 VGS = -2.5V 0.06 0.05 VGS = -4.5V 0.04 0.03 0.02 0.01 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 TA = 85C TA = 25C 2 VGS = -1.2V 0 TA = 150C 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 14 VGS = -1.5V 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -ID, DRAIN CURRENT (A) 16 TA = 125C 0 TA = -55C 0.5 1 1.5 2 2.5 -VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.5 ID = 3.4A ID = 4.2A 0.4 0.3 0.2 ID = 2.0A 0.1 20 0 0 1 2 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.8 0.1 VGS = -4.5V 0.09 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) -ID, DRAIN CURRENT (A) 16.0 0.08 TA = 125C 0.07 0.06 TA = 150C T A = 85C 0.05 TA = 25C 0.04 TA = -55C 0.03 0.02 1.6 VGS = -4.5V ID = -10A 1.4 VGS = -2.5V ID = -5A 1.2 1 0.8 0.01 0 0 1 2 3 4 5 6 7 8 9 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP6185SEQ Document Number DS39536 Rev. 1 - 2 10 3 of 6 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature February 2017 © Diodes Incorporated 1.2 0.1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () DMP6185SEQ 0.09 0.08 0.07 0.06 0.05 VGS = -4.5V ID = -10A 0.04 0.03 0.02 0.01 -ID = 1mA 0.8 -ID = 250µA 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 20 1 10000 C T, JUNCTION CAPACITANCE (pF) 18 -IS, SOURCE CURRENT (A) 16 14 12 TA= 150C 10 TA= 85C 8 6 TA= 125C 4 2 0 TA= 25C f = 1MHz 1000 Ciss 100 Coss Crss TA= -55C 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 30 35 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 10 -VGS, GATE-SOURCE VOLTAGE (V) 9 8 7 VDS = -30V ID = -12A 6 5 4 3 2 1 0 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP6185SEQ Document Number DS39536 Rev. 1 - 2 15 4 of 6 www.diodes.com February 2017 © Diodes Incorporated DMP6185SEQ 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JA(t) = r(t) * RJA R JA = 102°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b A1 7° 7° A 0° -1 0° e SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X DMP6185SEQ Document Number DS39536 Rev. 1 - 2 C 5 of 6 www.diodes.com February 2017 © Diodes Incorporated DMP6185SEQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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