PHILIPS BAS21PG Dual isolated high-voltage switching diode Datasheet

SO
T3
53
BAS21PG
Dual isolated high-voltage switching diode
9 June 2015
Product data sheet
1. General description
Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: trr ≤ 50 ns
Low leakage current
Reverse voltage VR ≤ 250 V
Low capacitance: Cd ≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed switching at high voltage
High-voltage general-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
Tj = 25 °C; single diode loaded
-
-
225
mA
VR
reverse voltage
Tj = 25 °C
-
-
250
V
IR
reverse current
VR = 200 V; Tj = 25 °C
-
25
100
nA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
-
-
50
ns
Per diode
Per diode
RL = 100 Ω; Tj = 25 °C
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BAS21PG
NXP Semiconductors
Dual isolated high-voltage switching diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
A1
anode diode 1
2
n.c.
not connected
3
A2
anode diode 2
4
K2
cathode diode 2
5
K1
cathode diode 1
Simplified outline
5
1
Graphic symbol
4
2
5
4
3
TSSOP5 (SOT353)
1
2
3
aaa-018440
6. Ordering information
Table 3.
Ordering information
Type number
BAS21PG
Package
Name
Description
Version
TSSOP5
plastic surface-mounted package; 5 leads
SOT353
7. Marking
Table 4.
Marking codes
Type number
Marking code
BAS21PG
PG
BAS21PG
Product data sheet
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BAS21PG
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Dual isolated high-voltage switching diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
250
V
IF
forward current
Tj = 25 °C; single diode loaded
-
225
mA
Tj = 25 °C; double diode loaded
-
125
mA
Per diode
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ = 25 %; Tj = 25 °C
-
625
mA
IFSM
non-repetitive peak forward
current
tp = 1 µs; Tj(init) = 25 °C; square wave
-
9
A
tp = 100 µs; Tj(init) = 25 °C; square wave
-
3
A
tp = 10 ms; Tj(init) = 25 °C; square wave
-
1.7
A
[1]
-
255
mW
[2]
-
290
mW
Per device; one diode loaded
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
BAS21PG
Product data sheet
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
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BAS21PG
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Dual isolated high-voltage switching diode
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
[2]
[3]
103
Conditions
Min
Typ
Max
Unit
[1]
-
-
495
K/W
[2]
-
-
430
K/W
[3]
-
-
95
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Soldering point of cathode tab.
aaa-018393
duty cycle =
1
Zth(j-a)
(K/W)
0.5
102
0.25
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS21PG
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BAS21PG
NXP Semiconductors
Dual isolated high-voltage switching diode
aaa-018394
103
duty cycle =
Zth(j-a)
(K/W)
1
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
102
10
tp (s)
103
FR4 PCB, mounting pad for cathode 1 cm²
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 100 µA; Tj = 25 °C
250
-
-
V
VF
forward voltage
IF = 100 mA; Tj = 25 °C
-
-
1
V
IF = 200 mA; Tj = 25 °C
-
-
1.25
V
VR = 200 V; Tj = 25 °C
-
25
100
nA
VR = 200 V; Tj = 150 °C
-
40
-
µA
Per diode
IR
reverse current
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tj = 25 °C
-
0.8
2
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
-
-
50
ns
RL = 100 Ω; Tj = 25 °C
BAS21PG
Product data sheet
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BAS21PG
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Dual isolated high-voltage switching diode
aaa-018395
1
IR
(A)
IF
(A)
10-1
aaa-018396
10-4
(1)
10-5
(2)
10-6
10-7
(1)
(2)
10-2
(3)
(4)
10-8
(3) (4)
10-9
(5)
10-3
10-10
(5)
10-11
10-4
0.0
Fig. 3.
0.4
0.8
1.2
VF (V)
10-12
1.6
0
50
100
(1) Tj = 150 °C
(1) Tj = 150 °C
(2) Tj = 125 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(5) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
Fig. 4.
mbg703
102
150
200
VR (V)
250
Reverse current as a function of reverse
voltage; typical values
aaa-018397
1.0
Cd
(pF)
IFSM
(A)
0.8
10
0.6
0.4
1
0.2
10- 1
1
10
102
103
tp (µs)
0.0
104
Based on square wave currents.
Tj(init) = 25 °C
Fig. 5.
Product data sheet
2
4
6
VR (R)
8
f = 1MHz; Tamb = 25 °C
Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS21PG
0
Fig. 6.
Diode capacitance as a function of reverse
voltage; typical values
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BAS21PG
NXP Semiconductors
Dual isolated high-voltage switching diode
aaa-018398
3
IF(AV)
(A)
(1)
2
(2)
(3)
1
(4)
0
0
25
50
75
100
125
150
175
Tamb (°C)
FR4 PCB, standard footprint; one diode loaded
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 7.
Average forward current as a function of ambient temperature; typical values
11. Test information
tr
D.U.T.
RS = 50 Ω
IF
tp
10 %
t
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 1 mA
Fig. 8.
Reverse recovery time: test circuit and waveforms
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 9.
Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
BAS21PG
Product data sheet
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BAS21PG
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Dual isolated high-voltage switching diode
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
2.2
1.8
1.1
0.8
5
0.45
0.15
4
2.2 1.35
2.0 1.15
1
2
3
0.3
0.2
0.65
1.3
0.25
0.10
Dimensions in mm
04-11-16
Fig. 10. Package outline TSSOP5 (SOT353)
13. Soldering
2.65
0.5 0.6
(4×) (4×)
0.75
solder lands
2.35
0.4
0.75
solder resist
solder paste
occupied area
0.5
(4×)
0.6
Dimensions in mm
0.6
(4×)
0.9
0.9
sot353_fr
Fig. 11. Reflow soldering footprint for TSSOP5 (SOT353)
BAS21PG
Product data sheet
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BAS21PG
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Dual isolated high-voltage switching diode
4.9
2.25
1.5
solder lands
1
solder resist
0.85
2.5
4.5
0.85
occupied area
Dimensions in mm
1
1.5
1.3
preferred transport
direction during soldering
1.3
1.225
1.225
sot353_fw
Fig. 12. Wave soldering footprint for TSSOP5 (SOT353)
BAS21PG
Product data sheet
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BAS21PG
NXP Semiconductors
Dual isolated high-voltage switching diode
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAS21PG v.1
20150609
Product data sheet
-
-
BAS21PG
Product data sheet
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BAS21PG
NXP Semiconductors
Dual isolated high-voltage switching diode
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BAS21PG
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 7
Quality information ............................................... 8
12
Package outline ..................................................... 8
13
Soldering ................................................................ 8
14
Revision history ................................................... 10
15
15.1
15.2
15.3
15.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 June 2015
BAS21PG
Product data sheet
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