GS3AF THRU GS3MF SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES SMAF The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability Glass passivated chip junction Cathode Band Top View 0.110(2.80) 0.094(2.40) Forward Current - 3.0 Amperes 0.059(1.50) 0.051(1.30) 0.144(3.65) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA 0.189(4.80) 0.173(4.40) Dimensions in inches and (millimeters) Case: JEDEC SMAF molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0018 ounce, 0.064 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 1) VRRM VRMS VDC Typical thermal resistance (NOTE 2) RθJA Operating junction and storage temperature range GS3AF GS3BF GS3DF GS3GF GS3JF GS3KF GS3MF 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 3.0 Amps IFSM 100.0 Amps VF 1.2 Volts IR 5.0 250.0 µA 53.0 13.0 47.0 pF C/W -50 to +150 C CJ TJ,TSTG Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES GS3AF THRU GS3MF Fig.2 Typical Instaneous Reverse Characteristics 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current ( μ A) Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =150°C T J =125°C 10 T J =100°C 1.0 T J =75°C T J =50°C 0.1 T J =25°C 0.01 0 Junction Capacitance ( pF) 2 5° C TJ = °C 00 TJ =1 50 °C 0.5 =1 600 800 Fig.4 Typical Junction Capacitance 1.0 TJ Instaneous Forward Current (A) Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 400 200 Instaneous Reverse Voltage (V) Ambient Temperature (°C) 100 10 T J =25°C 1 0.7 0.8 0.9 1.0 Instaneous Forward Voltage (V) ２０１４－０３ ０１版 1.1 0.1 1.0 10 100 Reverse Voltage (V) ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ