ON NDFP03N150CG N-channel power mosfet Datasheet

Ordering number : ENA2232
NDFP03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-220F-3FS
http://onsemi.com
Features
• On-resistance RDS(on)=8Ω(typ.)
• Input Capacitance Ciss=650pF(typ.)
• 10V drive
Specifications
TO-220F-3FS
Absolute Maximum Ratings at Ta = 25°C
Parameter
Drain to Source Voltage
Symbol
Conditions
Ratings
Unit
VDSS
1500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
2.5
A
Drain Current (DC) Limited by Package
IDL
2
A
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
PD
Tc=25°C
5
A
2
W
32
W
°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
- 55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
20
mJ
Avalanche Current *2
IAV
2
A
1
* VDD=50V, L=10mH, IAV=2A (Fig.1)
*2 L≤10mH, Single Pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
1500
V
Gate to Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=20V, ID=1A
1.9
Static Drain to Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
8
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
2
650
1
mA
±100
nA
4
V
10.5
Ω
S
pF
70
pF
Crss
20
pF
Turn-ON Delay Time
td(on)
15
ns
Rise Time
tr
20
ns
Turn-OFF Delay Time
td(off)
148
ns
Fall Time
tf
44
ns
VDS=30V, f=1MHz
See Fig.2
Continued on next Page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00003050 No. A2232-1/5
NDFP03N150C
Continued from preceding Page.
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.78
Reverse Recovery Time
trr
See Fig.3
300
ns
Reverse Recovery Charge
Qrr
IS=2A, VGS=0V, di/dt=100A/μs
1900
nC
VDS=200V, VGS=10V, ID=2A
34
nC
4.7
nC
15
nC
V
Forward Transfer Admittance, | yfs | -- S
1.5
No.A2232-2/5
NDFP03N150C
Operation in
this area is
limited by RDS(on).
No.A2232-3/5
NDFP03N150C
Package Dimensions
NDFP03N150CG
TO-220F-3FS
CASE 221AM
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Ordering & Package Information
Device
NDFP03N150CG
Marking
Package
Shipping
note
TO-220F-3FS
SC-67,
50
pcs. / tube
Pb-Free
Electrical Connection
2
03N150
C LOT No.
1
3
No.A2232-4/5
NDFP03N150C
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
Note on usage : Since the NDFP03N150C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2232-5/5
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