Thinki IQBD30E120A1 30.0 ampere switchmode single fast recovery epitaxial diode Datasheet

IQBD30E120A1
®
Pb
IQBD30E120A1
Pb Free Plating Product
30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode
TO-247-2L
APPLICATION
·
·
·
·
·
·
·
Cathode(Bottom Side Metal Heatsink)
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
Anode
PRODUCT FEATURE
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics
Cathode
Base Backside
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
IQBD30E120A1 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
T C =25°C unless otherwise specified
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
30
A
I F(RMS)
RMS Forward Current
T C =110°C
42
A
I FSM
Non-Repetitive Surge Forward Current
T J =45°C, t=10ms, 50Hz, Sine
300
A
PD
Power Dissipation
115
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque
Module-to-Sink
Recommended(M3)
1.1
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.1
°C /W
7.0
g
T C =110°C
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
T C =25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
V R =1200V
--
--
100
µA
V R =1200V, T J =125°C
--
--
1
mA
I F =30A
--
2.15
2.5
V
I F =30A, T J =125°C
--
1.75
--
V
I RM
Reverse Leakage Current
VF
Forward Voltage
t rr
Reverse Recovery Time
I F =1A, V R =30V, di F /dt=-200A/μs
--
30
--
ns
t rr
Reverse Recovery Time
V R =600V, I F =30A
--
160
--
ns
I RRM
Max. Reverse Recovery Current
di F /dt=-200A/μs, T J =25°C
--
5
--
A
t rr
Reverse Recovery Time
V R =600V, I F =30A
--
300
--
ns
I RRM
Max. Reverse Recovery Current
di F /dt=-200A/μs, T J =125°C
--
11
--
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
IQBD30E120A1
®
60
500
VR=600V
TJ =125°C
50
400
trr (ns)
40
IF (A)
IF=60A
TJ =125°C
30
300
200 IF=30A
20
IF=15A
TJ =25°C
100
10
0
0
0
1.0
2.0
3.0
1.5
2.5
VF(V)
Fig1. Forward Voltage Drop vs Forward Current
0.5
50
0
200
400
600
800
1000
diF/dt(A/μs)
Fig2. Reverse Recovery Time vs diF/dt
5
VR=600V
TJ =125°C
VR=600V
TJ =125°C
40
4
IF=60A
30
IF=30A
20
3
Qrr (μc)
IRRM (A)
IF=60A
2
IF=15A
IF=30A
10
IF=15A
1
0
0
0
400
600
1000
800
diF/dt(A/μs)
Fig3. Reverse Recovery Current vs diF/dt
200
1.4
0
200
400
600
800
1000
diF/dt(A/μs)
Fig4. Reverse Recovery Charge vs diF/dt
10
1.2
1
ZthJC (K/W)
1.0
Kf
0.8
0.6
trr
0.4
IRRM
0.2
Qrr
0
0
25
100 125 150
75
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
.
-1
10
-2
10
50
.
10
.
Duty
0.5
0.2
0.1
0.05
Single Pulse
-3
10
-4
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Page 2/3
http://www.thinkisemi.com/
IQBD30E120A1
®
IF
trr
IRRM
0.25 IRRM
Qrr
0.9 IRRM
dIF/dt
Fig7. Diode Reverse Recovery Test Circuit and Waveform
D
A
Ejector pin hole thickness (h)
L2
E2
E1
H
c1
L
L1
Ø
A1
b1
b
e
c
TO-247-2L DIMENSIONS
DIMENSIONS IN MILLIMETERS
SYMBOL
DIMENSIONS IN INCHES
MIN.
MAX.
MIN.
MAX.
A
4.850
5.150
0.191
0.200
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 Ref.
E2
3.600 Ref.
0.138 Ref.
0.142 Ref.
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Ø
7.100
7.300
0.280
e
10.900 Typ.
H
h
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
5.980 Typ.
0.000
0.287
0.429 Typ.
0.235 Typ.
0.300
0.000
0.012
Page 3/3
http://www.thinkisemi.com/
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