Vishay BYG24JHE3 Fast avalanche smd rectifier Datasheet

BYG24D thru BYG24J
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
200 V to 600 V
IFSM
30 A
IR
1.0 μA
VF
1.25 V
trr
140 ns
ER
20 mJ
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG24D
BYG24G
BYG24J
BYG24D
BYG24G
BYG24J
200
400
600
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current at TA = 65 °C
IF(AV)
1.5
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C
ER
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Revision: 21-Dec-11
V
Document Number: 88960
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG24D thru BYG24J
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
Minimum breakdown voltage
IR = 100 μA
Maximum instantaneous
forward voltage
IF = 1 A
IF = 1.5 A
Maximum reverse current
VR = VRRM
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
SYMBOL
BYG24D
BYG24G
BYG24J
UNIT
VBR
200
400
600
V
1.15
VF (1)
V
1.25
1
IR
µA
10
trr
140
ns
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
SYMBOL
PARAMETER
Junction to case
Maximum thermal resistance, junction to ambient
BYG24D
BYG24G
RJC
25
RJA (1)
150
RJA (2)
125
BYG24J
UNIT
°C/W
°C/W
Notes
Mounted on epoxy-glass hard tissue 35 μm x 17 mm2 cooper area per electrode
(2) Mounted on epoxy-glass hard tissue 35 μm x 50 mm2 cooper area per electrode
(1)
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYG24D-E3/TR
0.064
TR
1800
7" diameter plastic tape and reel
BYG24D-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG24DHE3/TR (1)
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
PREFERRED P/N
(1)
BYG24DHE3/TR3
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
RθJA =
125 K/W
50
VR = VRRM
VR = VRRM
155 K/W
40
Reverse Current (µA)
Reverse Power Dissipation (mW)
60
PR - Limit
at 100 % VR
175 K/W
30
20
10
PR - Limit
at 80 % VR
10
0
1
25
50
75
100
125
150
25
50
75
100
125
150
Junction Temperature (°C)
Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Revision: 21-Dec-11
Document Number: 88960
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG24D thru BYG24J
www.vishay.com
Vishay General Semiconductor
30
100
f = 1 MHz
10
Diode Capacitance (pF)
Forward Current (A)
25
TJ = 150 °C
TJ = 25 °C
1
0.1
20
15
10
5
0.01
0
0
0.5
1.0
1.5
2.0
2.5
0.1
3.0
1
10
100
Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1.8
VR = VRRM
Half Sine-Wave
Average Forward Current (A)
1.6
1.4
RθJA = 25 K/W
1.2
1.0
RθJA = 125 K/W
0.8
0.6
RθJA = 150 K/W
0.4
0.2
0.0
0
20
40
60
80
100
120
140
160
Ambient Temperature (°C)
Fig. 4 - Average Forward Current vs. Ambient Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Dec-11
Document Number: 88960
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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