Lyontek LY62L12916GL-55SLET 128k x 16 bit low power cmos sram Datasheet

®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 0.5
Rev. 0.6
Rev. 1.0
Description
Initial Issue
Revised Package Outline Dimension(TSOP-II)
Revised FEATURES & ORDERING INFORMATION
Lead free and green package available to Green package
available
Added packing type in ORDERING INFORMATION
Revised VTERM to VT1 and VT2
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised Test Condition of ISB1/IDR
Added ISB1/IDR values when TA = 25℃ and TA = 40℃
Added SL grade
Deleted L grade
Revised PACKAGE OUTLINE DIMENSION in page 12
Revised ORDERING INFORMATION in page 13
Revised Notes item 1 and 2 in page 4
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
Revised ORDERING INFORMATION
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
May.20.2005
Apr.12.2007
Apr.17.2009
Jun.15.2009
May.6.2010
Aug.30.2010
Aug.29.2013
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 45/55/70ns
„ Low power consumption:
Operating current : 23/20/18mA (TYP.)
Standby current : 1μA (TYP.) LL/SL -version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-pin 12mm x 20mm TSOP-I
48-ball 6mm x 8mm TFBGA
The LY62L12916 is a 2,097,152-bit low power
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L12916 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L12916 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62L12916
LY62L12916(E)
LY62L12916(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
Speed
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
45/55/70ns
45/55/70ns
45/55/70ns
FUNCTIONAL BLOCK DIAGRAM
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
1µA
23/20/18mA
1µA
23/20/18mA
1µA
23/20/18mA
PIN DESCRIPTION
Vcc
Vss
SYMBOL
DESCRIPTION
A0 – A16
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
A0-A16
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
CE2
WE#
OE#
LB#
UB#
DECODER
I/O DATA
CIRCUIT
128Kx16
MEMORY ARRAY
COLUMN I/O
CE#,CE2
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L12916
Rev. 1.0
128K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
PIN CONFIGURATION
A
LB# OE#
A0
A1
B
DQ8 UB#
A3
A4
CE# DQ0
C
DQ9 DQ10 A5
A6
DQ1 DQ2
D
Vss DQ11 NC
A7
DQ3 Vcc
E
Vcc DQ12 NC
A16 DQ4 Vss
F
DQ14 DQ13 A14
A15 DQ5 DQ6
G
DQ15 NC
A12
A13 WE# DQ7
A10
H
NC
A8
A9
1
2
3
4
TFBGA
A2
CE2
A11
NC
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
VT1
VT2
TA
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
CE2
OE#
H
X
X
L
L
L
L
L
L
L
L
X
L
X
H
H
H
H
H
H
H
H
X
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
X
H
H
H
H
H
L
L
L
X
X
H
L
X
L
H
L
L
H
L
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
ISB,ISB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
ICC,ICC1
High – Z
High – Z
DOUT
High – Z
ICC,ICC1
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
ICC,ICC1
DIN
High – Z
DIN
DIN
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS,
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL
IOL = 2mA
Cycle time = Min.
- 45
CE# = VIL and CE2 = VIH,
- 55
ICC
II/O = 0mA
- 70
Other pins at VIL or VIH
Average Operating
Power supply Current
Cycle time = 1µs
CE#≦0.2V and CE2≧VCC-0.2V,,
ICC1
II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
ISB
other pins at VIL or VIH
LL
LLE/LLI
CE# ≧VCC-0.2V
Standby Power
*5
SL
25℃
Supply Current
or CE2≦0.2V
*5
SLE
ISB1
Other pins at 0.2V
*5
40℃
SLI
or VCC - 0.2V
SL
SLE/SLI
MIN.
2.7
2.2
- 0.2
-1
*4
MAX.
3.6
VCC+0.3
0.6
1
UNIT
V
V
V
µA
-1
-
1
µA
2.2
-
2.7
23
20
0.4
40
35
V
V
mA
mA
-
18
30
mA
-
4
5
mA
-
0.3
0.5
mA
-
1
1
10
20
µA
µA
-
1
3
µA
-
1
3
µA
-
1
1
10
15
µA
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. This parameter is measured at VCC = 3.0V
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
TYP.
3.0
-
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM. LY62L12916-45 LY62L12916-55 LY62L12916-70 UNIT
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
tRC
45
55
70
ns
tAA
45
55
70
ns
tACE
45
55
70
ns
tOE
25
30
35
ns
tCLZ*
10
10
10
ns
tOLZ*
5
5
5
ns
tCHZ*
15
20
25
ns
tOHZ*
15
20
25
ns
tOH
10
10
10
ns
tBA
45
55
70
ns
tBHZ*
20
25
30
ns
tBLZ*
10
10
10
ns
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
tBW
LY62L12916-45 LY62L12916-55 LY62L12916-70
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
45
55
70
40
50
60
40
50
60
0
0
0
35
45
55
0
0
0
20
25
30
0
0
0
5
5
5
15
20
25
35
45
60
-
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE#, CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting
parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
CE2
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
Din
(4)
tDH
Data Valid
WRITE CYCLE 2 (CE#, CE2 Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tCW
tAS
tWR
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tCW
tAS
CE2
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.WE#,CE#, LB#, UB# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain
in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
SYMBOL
TEST CONDITION
VDR
CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V
LL
LLE/LLI
VCC = 1.5V
SL 25℃
CE# ≧ VCC - 0.2V
IDR
SLE
or CE2 ≦ 0.2V
40℃
Others at 0.2V or VCC-0.2V SLI
SL
SLE/SLI
See Data Retention
tCDR
Waveforms (below)
tR
MIN.
1.5
-
TYP.
0.5
0.5
MAX.
3.6
5
10
UNIT
V
µA
µA
-
0.5
3
µA
-
0.5
3
-
0.5
0.5
5
10
µA
µA
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
VIH
CE# ≧ Vcc-0.2V
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
tR
CE2 ≦ 0.2V
VIL
VIL
Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
LB#,UB#
VIH
tR
LB#,UB# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
o
o
o
3
6
0
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
o
o
o
0
3
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY62L12916
Rev. 1.0
128K X 16 BIT LOW POWER CMOS SRAM
48-pin 12 mm x 20 mm TSOP-I Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
®
LY62L12916
Rev. 1.0
128K X 16 BIT LOW POWER CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
44Pin(400mil)
TSOP-II
45
Power
Type
Special
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
55
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
70
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
Packing
Type
Tray
LY62L12916ML-45SL
Tape Reel
LY62L12916ML-45SLT
Tray
LY62L12916ML-45SLE
Tape Reel
LY62L12916ML-45SLET
Tray
LY62L12916ML-45SLI
Tape Reel
LY62L12916ML-45SLIT
Tray
LY62L12916ML-45LL
Tape Reel
LY62L12916ML-45LLT
Tray
LY62L12916ML-45LLE
Tape Reel
LY62L12916ML-45LLET
Tray
LY62L12916ML-45LLI
Tape Reel
LY62L12916ML-45LLIT
Tray
LY62L12916ML-55SL
Tape Reel
LY62L12916ML-55SLT
Tray
LY62L12916ML-55SLE
Tape Reel
LY62L12916ML-55SLET
Tray
LY62L12916ML-55SLI
Tape Reel
LY62L12916ML-55SLIT
Tray
LY62L12916ML-55LL
Tape Reel
LY62L12916ML-55LLT
Tray
LY62L12916ML-55LLE
Tape Reel
LY62L12916ML-55LLET
Tray
LY62L12916ML-55LLI
Tape Reel
LY62L12916ML-55LLIT
Tray
LY62L12916ML-70SL
Tape Reel
LY62L12916ML-70SLT
Tray
LY62L12916ML-70SLE
Tape Reel
LY62L12916ML-70SLET
Tray
LY62L12916ML-70SLI
Tape Reel
LY62L12916ML-70SLIT
Tray
LY62L12916ML-70LL
Tape Reel
LY62L12916ML-70LLT
Tray
LY62L12916ML-70LLE
Tape Reel
LY62L12916ML-70LLET
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
Lyontek Item No.
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
-40℃~85℃
Tray
LY62L12916ML-70LLI
Tape Reel
LY62L12916ML-70LLIT
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
48Pin12mmx20mm
TSOP-I
45
Power
Type
Special
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
55
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
70
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
Packing
Type
Tray
LY62L12916LL-45SL
Tape Reel
LY62L12916L-45SLT
Tray
LY62L12916LL-45SLE
Tape Reel
LY62L12916LL-45SLET
Tray
LY62L12916LL-45SLI
Tape Reel
LY62L12916LL-45SLIT
Tray
LY62L12916LL-45LL
Tape Reel
LY62L12916LL-45LLT
Tray
LY62L12916LL-45LLE
Tape Reel
LY62L12916LL-45LLET
Tray
LY62L12916LL-45LLI
Tape Reel
LY62L12916LL-45LLIT
Tray
LY62L12916LL-55SL
Tape Reel
LY62L12916LL-55SLT
Tray
LY62L12916LL-55SLE
Tape Reel
LY62L12916LL-55SLET
Tray
LY62L12916LL-55SLI
Tape Reel
LY62L12916LL-55SLIT
Tray
LY62L12916LL-55LL
Tape Reel
LY62L12916LL-55LLT
Tray
LY62L12916LL-55LLE
Tape Reel
LY62L12916LL-55LLET
Tray
LY62L12916LL-55LLI
Tape Reel
LY62L12916LL-55LLIT
Tray
LY62L12916LL-70SL
Tape Reel
LY62L12916LL-70SLT
Tray
LY62L12916LL-70SLE
Tape Reel
LY62L12916LL-70SLET
Tray
LY62L12916LL-70SLI
Tape Reel
LY62L12916LL-70SLIT
Tray
LY62L12916LL-70LL
Tape Reel
LY62L12916LL-70LLT
Tray
LY62L12916LL-70LLE
Tape Reel
LY62L12916LL-70LLET
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
14
Lyontek Item No.
®
LY62L12916
128K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.0
-40℃~85℃
Tray
LY62L12916LL-70LLI
Tape Reel
LY62L12916LL-70LLIT
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
48ball 6mmx8mm
TFBGA
45
Power
Type
Special
Ultra Low Power
Temperature
Range(℃)
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
55
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~50℃
-40℃~85℃
70
Special
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Ultra Low Power
0℃~70℃
-20℃~80℃
Packing
Type
Tray
LY62L12916GL-45SL
Tape Reel
LY62L12916GL-45SLT
Tray
LY62L12916GL-45SLE
Tape Reel
LY62L12916GL-45SLET
Tray
LY62L12916GL-45SLI
Tape Reel
LY62L12916GL-45SLIT
Tray
LY62L12916GL-45LL
Tape Reel
LY62L12916GL-45LLT
Tray
LY62L12916GL-45LLE
Tape Reel
LY62L12916GL-45LLET
Tray
LY62L12916GL-45LLI
Tape Reel
LY62L12916GL-45LLIT
Tray
LY62L12916GL-55SL
Tape Reel
LY62L12916GL-55SLT
Tray
LY62L12916GL-55SLE
Tape Reel
LY62L12916GL-55SLET
Tray
LY62L12916GL-55SLI
Tape Reel
LY62L12916GL-55SLIT
Tray
LY62L12916GL-55LL
Tape Reel
LY62L12916GL-55LLT
Tray
LY62L12916GL-55LLE
Tape Reel
LY62L12916GL-55LLET
Tray
LY62L12916GL-55LLI
Tape Reel
LY62L12916GL-55LLIT
Tray
LY62L12916GL-70SL
Tape Reel
LY62L12916GL-70SLT
Tray
LY62L12916GL-70SLE
Tape Reel
LY62L12916GL-70SLET
Tray
LY62L12916GL-70SLI
Tape Reel
LY62L12916GL-70SLIT
Tray
LY62L12916GL-70LL
Tape Reel
LY62L12916GL-70LLT
Tray
LY62L12916GL-70LLE
Tape Reel
LY62L12916GL-70LLET
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
15
Lyontek Item No.
®
LY62L12916
Rev. 1.0
128K X 16 BIT LOW POWER CMOS SRAM
-40℃~85℃
Tray
LY62L12916GL-70LLI
Tape Reel
LY62L12916GL-70LLIT
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
16
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