INCHANGE Semiconductor MUR4020PT Ultrafast Rectifier FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Rectifier in switch mode supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 40 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 220 A Junction Temperature 150 ℃ -40~150 ℃ TJ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MUR4020PT Fast Recovery Rectifier ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT 1.05 V VF Maximum Instantaneous Forward Voltage IF= 20A ;Tj=25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tj=25℃ 1.0 μA trr Maximum Reverse Recovery Time IF =0.5A; 35 ns isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark